• 한국재료학회지
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• 제29권12호
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• pp.764-773
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• 2019

The gas response characteristic toward C₂H₅OH has been demonstrated in terms of copper-vacancy concentration, hole density, and microstructural factors for undoped/Li(I)-doped CuO thin films prepared by sol-gel method. For the films, both concentrations of intrinsic copper vacancies and electronic holes decrease with increasing calcination temperature from 400 to 500 to 600 ℃. Li(I) doping into CuO leads to the reduction of copper-vacancy concentration and the enhancement of hole density. The increase of calcination temperature or Li(I) doping concentration in the film increases both optical band gap energy and Cu2p binding energy, which are characterized by UV-vis-NIR and X-ray photoelectron spectroscopy, respectively. The overall hole density of the film is determined by the offset effect of intrinsic and extrinsic hole densities, which depend on the calcination temperature and the Li(I) doping amount, respectively. The apparent resistance of the film is determined by the concentration of the structural defects such as copper vacancies, Li(I) dopants, and grain boundaries, as well as by the hole density. As a result, it is found that the gas response value of the film sensor is directly proportional to the apparent sensor resistance.

• 한국재료학회지
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• 제12권6호
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• pp.436-441
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• 2002

Effect of Sn addition on the stress corrosion cracking(SCC) resistance of the Al-Cu-Mn cast alley was investigated by C-ring teat and electrical conductivity measurement, The electrical conductivity and SCC resistance increased by Sn addition. The alley containing 0,10%Sn showed maximum electrical conductivity and the best SCC resistance. At the same composition, the electrical conductivity and SCC resistance increased from peak aged condition to ever aged condition. The PFZ and coarse precipitates along the grain boundary were observed from TEM micrographs. The fracture mode of the alloy was confirmed as intergranular type and showed brittle fracture surface. The SCC mechanism of the alloy was concluded as the anodic dissolution model, The maximum hardness was increased from 130Hv in the Sn-free alloy to 156Hv in the 0.10%Sn added alloy.

• Journal of Welding and Joining
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• 제8권4호
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• pp.27-34
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• 1990

Integranular corrosion behaviors of KAL (Knife Line Attack) and mechanical properties such as tensile and creep rupture were investigated for the tube material used for nearly 20 years under the condition of 463.deg. C and 28 $kg/cm^2$. Based and weld metal were austenitic stainless steel AISI 321 containing Ti, AISI 347 containing Nb, respectively. KLA is a kind of the intergranular corrosion which often occurs just near the HAZ (heat affected zone) of AISI 321 and AISI 347 stainless steel due to the grain boundary sensitization. In KLA zone, intergranular corrosion crack has propagated outwards from the inner surface and carbides of white and narrow band type assuming as (Cr, Fe) carbide were confirmed. All the delta-ferrite formed in the weld metal during weld solidification has been transformed into sigma-phase since delta-ferrte was exposed for 20 years at 463.deg. C. Elongation was very low at the range from room temperature to 600.deg. C and it was confirmed that creep-rupture properties were not consideralbly affected.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.675-678
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• 2003

We studied the electrical characteristics of pentacene-based organic field-effect transistors (FETs) with polymethyl methacrylate (PMMA) or poly-4-vinylphenol (PVP) as the gate insulator. PMMA or PVP was spin-coated on the indium tin oxide glass substrate that serves as gate electrodes. The source-drain current dependence on the gate voltage shows the FET characteristics of the hole accumulation type. The transistor with PVP shows a higher field-effect mobility of 0.14 $cm^{2}/Vs$ compared with 0.045 $cm^{2}/Vs$ for the transistor with PMMA. The atomic force microscope (AFM) images indicate that the grain size of the pentacene on PVP is larger than that on PMMA. X-ray diffraction (XRD) patterns for the pentacene deposited on PVP exhibit a new Bragg reflection at $19.5{\pm}0.2^{\circ}$, which is absent for the pentacene on PMMA. This peak corresponds to the flat-lying pentacene molecules with less intermolecular spacing.

• E2M - 전기 전자와 첨단 소재
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• 제9권6호
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• pp.578-583
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• 1996

The magnetic properties have been investigated for the system of $Y_{1-x}$Yb$_{x}$Ba$_{2}$Cu$_{3}$F$_{y}$O$_{y}$ with x=0.0, 0.1, 0.2, 0.3, 0.4 and 0.5. In the magnetic hysteresis measurements, the values of the magnetic critical current densities are in the range of 10$^{4}$-10$^{5}$ A/cm$^{2}$ at the maximum external field 1.4 T. The upper critical field is over 100 T. The critical current density is estimated by the magnetization width .DELTA.M through the Bean critical state model. As the field strength is increased, the .DELTA.M diminishes slowly. The .DELTA.M for the fluorinated sample also decreases slowly with increasing field. It is considered that the large J, value results from this type is due to enhanced pinning center in grain boundary.y.ary.y.

• 한국세라믹학회지
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• 제44권10호
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• pp.537-541
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• 2007

Microwave dielectric properties of $0.95 Ca_{0.85}Nd_{0.1}TiO_3-0.05LnAlO_3$ (Ln=Sm, DH, Er) were investigated as a function of sintering temperature and lanthanide ion type. A single perovskite phase with an orthorhombic structure was obtained throughout the entire range of composition. The dielectric constant (K) was dependent upon the dielectric polarizabilities and the B-site bond valence in the $ABO_3$ perovskite structure. The quality factor (Qf) of the specimens with $ErAlO_3$ was smaller than those with $SmAlO_3\;and/or\;DyAlO_3$ due to the smaller grain size. The temperature coefficient of resonant frequency (TCF) could be controlled from $107.28ppm/^{\circ}C$ at Ln=Sm to $87.23ppm/^{\circ}C$ at Ln=Er due to the changes of B-site bond valence in the $ABO_3$ perovskite structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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• pp.100-103
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• 1993

Ferroelectric lean-titanate thin films were fabricated by sol-gel processing. Sol-gel derived $PbTiO_3$ thin films crystallized into the expected tetragonal perovskite structure when heated to $600^{\circ}C$ and above. The effects of annealing temperature on grain size made with SEM observation are reported. The films heated at $650^{\circ}C$ for 30min showed a square-type hysteresis loop with $P_r$ and $E_c$ of $11.5{\mu}C/cm^2$, 115kV/cm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.145-145
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• 2010

It is observed from SEM images that many voids were created after annealed by helium gas. The PL spectra of the ZnO samples revealed the strong violet emission peaks at 3.05 eV with the relative weak near band edge UV emissions. It was concluded from experiment results that native $Zn_i$ and $V_o$ donor defect levels can be generated below the conduction band edge due to the incorporation of helium atoms decomposed from helium gas into the ZnO matrix. He atoms in ZnO matrix will affect the interface trap existing in depletion regions located at the grain boundaries, which leads to the creation of $Zn_i$ and $V_o$ donor defect levels.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.80-81
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• 2008

Schottky barrier thin film transistors (SB-TFT) on polycrystalline silicon(poly-Si) are fabricated by platinum silicided source/drain for p-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method. The fabricated poly-Si SB-TFTs showed low leakage current level and a large on/off current ratio larger than $10^5$. Significant improvement of electrical characteristics were obtained by the additional forming gas annealing in 2% $H_2/N_2$ ambient, which is attributed to the termination of dangling bond at the poly-Si grain boundaries as well as the reduction of interface trap states at gate oxide/poly-Si channel.

• 반도체디스플레이기술학회지
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• 제9권1호
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• pp.29-33
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• 2010

Recently, the growth of ZnO thin film on glass substrate has been investigated extensively for transparent thin film transistor. We have studied the phase transition of ZnO thin films from metal to semiconductor by changing RF power in the deposition process by RF magnetron sputtering system. The structural, electric, and optical properties of the ZnO thin films were investigated. The film deposited with 75 watt of RF power showed n-type semiconductor characteristic having suitable resistivity $-3.56\;{\times}\;10^{+1}\;{\Omega}cm$, carrier concentration $-2.8\;{\times}\;10^{17}\;cm^{-3}$, and mobility $-0.613\;cm^2V^{-1}s^{-1}$ while other films by 25, 50, 100 watt of RF power closed to metallic films. From the surface analysis (AFM), the number of crystal grain of ZnO thin film increased as RF power increased. The transmittance of the film was over 88% in the visible region regardless of the change in RF power.