• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.107-108
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• 2005

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.103-104
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• 2006

In this paper. we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interlace. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then. we compared the structural characteristics before and alter CMP process of PZT films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.49-50
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• 2006

The studies on Cu CMP have focused on material removal and its mechanisms. Although many studies have been conducted on the mechanism of Cu CMP, a study on uniformity in Cu CMP is still unknown. Since the aim of CMP is global and local planarization, the approach to uniformity in Cu CMP is essential to elucidate the Cu CMP mechanism as well. The main purpose of the experiment reported here was to investigate the roles of slurry components in the formation of the uniformity in Cu CMP. All the results of in this study showed that the uniformity in Cu CMP could be controlled by the contents of slurry components.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.370-373
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical Planarization(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper depostion is a mature process from a historical point of view, but a very young process from a CMP persperspective. While copper electrodepostion has been used and stuidied for dacades, its application to Cu damascene wafer processing is only now ganing complete accptance in the semiconductor industry. The polishing mechanism of Cu CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper pasivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.82-82
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• 2007

The chemical mechanical polishing (CMP) process has been widely used to obtain global planarization of multilevel interconnection process for ultra large scale. integrated circuit applications. Especially, the application of copper CMP has become an integral part of several semiconductor device and materials manufacturers. However, the low-k materials at 65nm and below device structures because of fragile property, requires low down-pressure mechanical polishing for maintaining the structural integrity of under layer during their fabrication. In this paper, we studied electrochemical mechanical polishing (ECMP) as a new planarization technology that uses electrolyte chemistry instead of abrasive slurry for copper CMP process. The current-voltage (I-V) curves were employed we investigated that how this chemical affect the process of voltage induced material removal in ECMP of Copper. This work was supported by grant No. (R01-2006-000-11275-0) from the Basic Research Program of the Korea Science.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.55-56
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• 2006

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ($Ba_{0.6}Sr_{0.4}TiO_3$), PZT ($Pb_{1.1}(Zr_{0.52}TiO_{0.48})O_3$) and BTO ($BaTiO_3$) ferroelectric film are fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of BST, PZT, BTO films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.359-361
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• 2006

As circuits become increasingly complex and devices sizes shrinks, the demands placed on global planarization of higher level. Chemical Mechanical Polishing (CMP) is an indispensable manufacturing process used to achieve global planarity. In the CMP process, Diamond Disk (DD) plays an important role in the maintenance of removal rate. According to studies, the cause of removal rate decrease in the early or end stage of diamond disk lifetime comes from pad surface change. We also presented pad cutting rate (PCR) as a useful cutting ability index of DD and studied PCR trend about variable parameters that including size, hardness, shape of DD and RPM, pressure of conditioner It has been shown that PCR control ability of pressure and shape is superior to RPM and size. High pressure leads to a decrease of cell open ratio of pad surface because polyurethane of pad is destroyed by pressure. So low pressure high RPM condition is a proper removal rate sustain. By examining correlations between RPM and pressure of conditioner, it has been shown that PCR safe zoneto satisfy proper removal rate has the range 0.06mm/hr to 0.12mm/hr.

• Tribology and Lubricants
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• v.35 no.6
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• pp.330-336
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• 2019

Conditioning is a process involving pad surface scraping by a moving metallic disk that is electrodeposited with diamond abrasives. It is an indispensable process in chemical-mechanical planarization, which regulates the pad roughness by removing the surface residues. Additionally, conditioning maintains the material removal rates and increases the pad lifetime. As the conditioning continues, the pad profile becomes unevenly to be deformed, which causes poor polishing quality. Simulation calculates the density at which the diamond abrasives on the conditioner scratch the unit area on the pad. It can predict the profile deformation through the control of conditioner dwell time. Previously, this effect of the diamond shape on conditioning has been investigated with regard to microscopic areas, such as surface roughness, rather than global pad-profile deformation. In this study, the effect of diamond shape on the pad profile is evaluated by comparing the simulated and experimental conditioning using two conditioners: a) random-shaped abrasive conditioner (RSC) and b) uniform-shaped abrasive conditioner (USC). Consequently, it is confirmed that the USC is incapable of controlling the pad profile, which is consistent with the simulation results.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1727-1729
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP precess, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1600-1604
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.