• Current Photovoltaic Research
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• v.2 no.3
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• pp.120-123
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• 2014

Thermal doping method using furnace is generally used for solar-cell wafer doping. It takes a lot of time and high cost and use toxic gas. Generally selective emitter doping using laser, but laser is very high equipment and induce the wafer's structure damage. In this study, we apply atmospheric pressure plasma for solar-cell wafer doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (1 kHz ~ 100 kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer (120 ohm/square). SIMS (Secondary Ion Mass Spectroscopy) are used for measuring wafer doping depth and concentration of phosphorus. We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2536-2538
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• 1998

This paper investigates the residual stress of tetraethoxysilane (TEOS) and 7wt% phosphosilicate glass (PSG), which are commonly used as a sacrificial layer or etch mask in the fabrication of microelectromechanical systems (MEMS). In order to measure residual stress, $2{\mu}m$ thick TEOS and PSG stress measurement structures are fabricated. Polysilicon is used as the sacrificial layer. First the residual stress of an as-deposited 7wt% PSG flim and TEOS film are measured to be-0.3115% and -0.435%, respectively, which are quite large. These films are annealed from $500^{\circ}C$ to $800^{\circ}C$. Annealing has the effects of reducing residual stress. In the case of the 7wt% PSG film, the residual stress becomes +0.00715% after annealing at $625^{\circ}C$ for 150 minutes. In the case of TEOS film, the residual stress reduces to -0.2134% after same condition. Incidentally, this condition is the same condition for depositing a $2{\mu}m$ thick polysilicon at $625^{\circ}C$ at our low pressure chemical vapor deposition (LPCVD) furnace.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.575-580
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• 2012

Geopolymers were synthesized using raw materials produced from two different areas: one was from Indonesia and the other was from Habcheon, Korea. The constituting phases of the Indonesian raw material were quartz and kaolinite, while those of the Habcheon sample were quartz, halloysite and albite. They were both calcined at $750^{\circ}C$ for 6 hours, and solution of NaOH and water glass was added to activate the geopolymeric reaction. The compressive strength of geopolymer synthesized from the Indonesian raw material showed a low value of $151\;kgf/cm^2$ after curing for 28 days. However, it could be greatly increased by adding blast furnace slag powders of $1188\;kgf/cm^2$ and $1969\;kgf/cm^2$ at 20 wt% and 40 wt% additions, respectively. The compressive strength of the geopolymer synthesized from the Habcheon raw material was high, at $557\;kgf/cm^2$, after 28 days, and the very high early-stage (3 days) strength of $556\;kgf/cm^2$ for this sample was remarkable. Commercially available Habcheon metastate raw material, of which composition showed low CaO and $Na_2O$ contents compared to the calcined Habcheon raw material, was also examined. It was found that the compressive strength of the commercial metastate type was nearly identical to that of the calcined Habcheon raw material except for the relatively low value at an early curing stage and at a high curing temperature of $60^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.594-599
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• 2007

[ $CulnS_2$ ] thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature $200^{\circ}C$. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the annealed $200^{\circ}C$ of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. The compositional deviations from the ideal chemical formula for $200^{\circ}C$ material can be conveniently described by non-molecularity$({\Delta}x=[Cu/In]-1)$ and non-stoichiometry $({\Delta}y=[{2S/(Cu+3In)}-1])$. The variation of ${\Delta}x$ would lead to the formation of equal number of donor and accepters and the films would behave like a compensated material. The ${\Delta}y$ parameter is related to the electronic defects and would determine the type of the majority charge carriers. Films with ${\Delta}y>0$ would behave as p-type material while ${\Delta}y<0$ would show n-type conductivity. At the sane time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}cm^{-3},\;312.502cm^2/V{\cdot}s\;and\;2.36{\times}10^{-2}\;{\Omega}{\cdot}cm$, respectively.

• Resources Recycling
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• v.27 no.6
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• pp.38-43
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• 2018

In this study, using electro-refining process and methane gas reduction, we performed studying the recovery of tin with high purity from waste tin oxide had used as a electrode rod of ceramic furnace which occurred during glass production process. We recovered the crude tin of 99% purity from a methane gas reduction process and controlled a little amount of impurities. When the electrolytic refining condition was a current density of $60A/dm^2$ and the sulfuric acid concentration of 0.75 mol, 96.8% of recovered tin (99.979% of purity) were recovered during the electrolytic refining. We confirmed that toxic impurities such as Pb, Sb included in electrode rod. could be controlled.

• Korean Journal of Metals and Materials
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• v.49 no.1
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• pp.79-84
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• 2011

Double-walled carbon nanotubes (DWCNTs) with high purity were produced by the catalytic decomposition of tetrahydrofuran (THF) using a Fe-Mo/MgO catalyst at $800^{\circ}C$. The as-synthesized DWCNTs typically have catalytic impurities and amorphous carbon, which were removed by a two-step purification process consisting of acid treatment and oxidation. In the acid treatment, metallic catalysts were removed in HCl at room temperature for 5 hr with magnetic stirring. Subsequently, the oxidation, using air at $380^{\circ}C$ for 5 hr in the a vertical-type furnace, was used to remove the amorphous carbon particles. The DWCNT suspension was prepared by dispersing the purified DWCNTs in the aqueous sodium dodecyl sulfate solution with horn-type sonication. This was then air-sprayed on ITO glass to fabricate DWCNT field emitters. The field emission properties of DWCNT films related to transmittance were studied. This study provides the possibility of the application of large-area transparent CNT field emission cathodes.

• Korean Journal of Metals and Materials
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• v.48 no.4
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• pp.335-341
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• 2010

High-quality single-walled carbon nanotubes (SWCNTs) were synthesized by catalytic decomposition of $C_2H_2$ using Fe-Mo/MgO catalyst at $800^{\circ}C$. The as-synthesized SWCNTs typically occurred in the form of a bundle with a diameter of 10~20 nm together with amorphous carbon and catalytic impurities, which were removed by a two-step purification process consisting of oxidation and an acid treatment. The oxidation step, using an $O_2$-Ar mixture at $380^{\circ}C$ for 5 hr in a vertical-type furnace and a $HNO_3$ treatment at $100^{\circ}C$ for one hour, was utilized to remove the amorphous carbon particles. Subsequently, metallic catalysts were removed in HCl at room temperature for 5 hr under magnetic stirring. The SWCNT suspension was prepared by dispersing the purified SWCNTs in an aqueous sodium dodecyl benzene sulfonate solution with horn-type sonication. This was then air-sprayed on glass to fabricate CNT field emitters. The samples had a turn-on field value of 4 V/${\mu}m$ and a current density of 0.67 mA/$cm^2$ at 9 V/${\mu}m$. Increasing the HCl treatment time improved the field emission properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.56-62
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• 2021

In this study, we created a DBD plasma device and a MnO2 catalyst mesh filter for evaluating ozone reduction of devices via the catalyst method. The DBD plasma device was manufactured by applying Ag paste to soda lime glass via the screen-printing method. The MnO2 catalyst mesh filter was manufactured by mixing MnO2 powder with binder with a 10% difference in concentration from 10% to 50% and then applying it using the dip-coating method. Finally, we sintered a MnO2 catalyst mesh filter in an electric furnace. We evaluated the characteristics of ozone generation according to the Ar gas flow of DBD plasma devices, the opening ratio, and ozone reduction performance of the MnO2 catalyst filters. Ozone reduction performance was approximately 20.4% at MnO2 10 wt%, 37.8% at MnO2 30 wt% and 50% at MnO2 50 wt%.

• Nuclear Engineering and Technology
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• v.55 no.5
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• pp.1855-1862
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• 2023

Graphite crucibles are used for melting uranium and its alloys in VIM furnace. Various coating materials namely Al₂O₃, ZrO₂, MgO etc. are applied on the inner surface of the crucibles using paint brush or thermal spray technique to mitigate U-C interaction. These leads to significant amount of carbon pick-up in uranium. In this study, the attempts are made to develop multilayer coatings comprising of SiC/Y₂O₃ and Mo/Y₂O₃ on graphite to study the feasibility of minimizing U-C interaction. The parameters are optimized to prepare SiC coating of about 70㎛ thickness using CVD technique on graphite coupons and subsequently Y₂O₃ coating of about 250㎛ thickness using plasma spray technique. Molybdenum and Y₂O₃ layers were deposited using plasma spray technique with 70㎛ and 250㎛ thickness, respectively. Interaction studies of the coated graphite with molten uranium at 1450℃ for 20 min revealed that Y₂O₃ coating with SiC interlayer provides physical barrier for uranium-graphite interaction, however, this led to the physical separation of coating layer. Y₂O₃ coating with Mo interlayer provided superior barrier effect showing no degradation and the coatings remained intact after interaction tests. Therefore, the Mo/Y₂O₃ coating was found to be a promising solution for minimizing carbon pick-up during uranium/uranium alloy melting.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.238-244
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• 2013

Doping process using laser is an important process in fabrication of solar cell for heat treatment. However, the process of using the furnace is difficult to form a selective emitter doping region. The case of using a selective emitter laser doping is required an expensive laser equipment and induce the wafer's structure damage due to high temperature. This study, we fabricated a new costly plasma source. Through this, we research the selective emitter doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (a few tens kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer. Atmospheric plasma treatment time was 15 s and 30 s, and current for making the plasma is 40 mA and 70 mA. We investigated a doping profile by using SIMS (Secondary Ion Mass Spectroscopy) and we grasp the sheet resistance of electrical character by using doping profile. As result of experiment, prolonged doping process time and highly plasma current occur a deeper doping depth, moreover improve sheet resistance. We grasped the wafer's surface damage after atmospheric pressure plasma doping by using SEM (Scanning Electron Microscopy). We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.