• Korean Journal of Materials Research
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• 제24권5호
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• pp.259-265
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• 2014

$ZrO_2$ films were coated on aluminum etching foil by the sol-gel method to apply $ZrO_2$ as a dielectric material in an aluminum(Al) electrolytic capacitor. $ZrO_2$ films annealed above $450^{\circ}C$ appeared to have a tetragonal structure. The withdrawal speed during dip-coating, and the annealing temperature, influenced crack-growth in the films. The $ZrO_2$ films annealed at $500^{\circ}C$ exhibited a dielectric constant of 33 at 1 kHz. Also, uniform $ZrO_2$ tunnels formed in Al etch-pits $1{\mu}m$ in diameter. However, $ZrO_2$ film of 100-200 nm thickness showed the withstanding voltage of 15 V, which was unsuitable for a high-voltage capacitor. In order to improve the withstanding voltage, $ZrO_2$-coated Al etching foils were anodized at 300 V. After being anodized, the $Al_2O_3$ film grew in the directions of both the Al-metal matrix and the $ZrO_2$ film, and the $ZrO_2$-coated Al foil showed a withstanding voltage of 300 V. However, the capacitance of the $ZrO_2$-coated Al foil exhibited only a small increase because the thickness of the $Al_2O_3$ film was 4-5 times thicker than that of $ZrO_2$ film.

• Korean Journal of Materials Research
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• 제31권1호
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• pp.8-15
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• 2021

Transparent, photocatalytic, and self-cleaning TiO2 thin film is developed by TiO2 sol-gel coating on glass and polycarbonate (PC) substrates. Acetyl acetone (AcAc) suppresses the precipitation of TiO2 by forming a yellowish (complex) transparent sol-gel. XPS analysis confirms the presence of Ti2p and O1s in the thin films on glass and PC substrates. The TiO2-sol is prepared by stabilizing titanium (IV) isopropoxide (TTIP) with diethylamine and methyl alcohol. The addition of AcAcsilane coupling solution to the TiO2-sol instantaneously turns to yellowish color owing to the complexing of titanium with AcAc. The AcAc solution substantially improves the photocatalytic property of the TiO2 coating layer in MB solutions. The coated TiO2 film exhibits super hydrophilicity without and with light irradiation. The TiO2 thin film stabilized by adding 8.7 wt% AcAc shows the highest photo-degradation for methylene blue (MB) solution under UV light irradiation. Also, the optimum photocatalytic activity is obtained for the 8.7 wt% AcAc-stabilized TiO2 coating layer calcined at 450 ℃. The thin-films on glass exhibit fast self-cleaning from oleic acid contamination within 45 min of UV-light irradiation. The appropriate curing time at 140 ℃ improves the anti-fogging and thermal stability of the TiO2 film coated on PC substrate. The watermark-free PC substrate is particularly beneficial to combat fogging problems of transparent substrates.

• Nuclear Engineering and Technology
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• 제56권7호
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• pp.2444-2451
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• 2024

This work demonstrates a new sol-gel approach for synthesizing PbO₂-doped zirconia using zircon mineral precursors. The streamlined methodology enables straightforward fabrication of the doped zirconia composites. Comprehensive materials characterization was performed using XRD, SEM, and TEM techniques to analyze the crystal structure, microstructure, and morphology. Quantitative analysis of the XRD data provided insights into the nanoscale crystallite sizes achieved, along with their relationship to lattice imperfections. Furthermore, the gamma-ray shielding capacity for the PbO₂-doped zirconia samples was estimated by the Monte Carlo simulation, which proves an increase in the gamma ray shielding properties by raising the Pb concentration. The linear attenuation coefficient increased between 0.467 and 0.499 cm^-1 (at 0.662 MeV) by increasing the Pb content between 11 and 21 wt%. By increasing the Pb content to 21 wt%, the synthesized composites' lead equivalent thickness reaches 2.49 cm. The radiation shielding properties for the synthesized composites revealed a remarkable performance against low and intermediate γ-ray photons, with radiation shielding capacity of 37.3 % and 21.4 % at 0.662 MeV and 2.506 MeV, respectively. As a result, the developed composites can be employed as an alternative shielding material in hospitals and radioactive zones.

• Korean Journal of Materials Research
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• 제12권11호
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• pp.835-839
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• 2002

Metal-Ferroelectric-Metal(MFM) capacitors were prepared using $Bi_{3.3}$ $La_{0.7}$ $Ti_3$$O_{12}$ (BLT) ferroelectric thin films which were spin coated on $Pt/Ti/SiO_2$/Si substrates by the Sol-Gel method. BLT thin films annealed at above $650^{\circ}C$ showed polycrystalline structures with typical c-axis preferred orientation. The grain size and surface roughness were increased as the annealing temperature increased from $650^{\circ}C$ to $700^{\circ}C$. In addition, the full width at half maximum (FWHM) values were decreased with increasing annealing temperatures, indicating the improvement of crystallinity. The remanent polarization (2Pr= $Pr^{+}$ $+Pr^{-) }$ and leakage current of the BLT film annealed at $650^{\circ}C$ were about 29.3 $\mu$C/cm$^2$ and $2.3$\times$10^{-8}$$ A/cm^2$ at 3V. There were no distinct changes in the retention charges after $10^{10}$ polarization switching cycles, showing good fatigue property of the annealed BLT films.

• Korean Journal of Materials Research
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• 제6권3호
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• pp.282-290
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• 1996

광화학 반응의 초기 유발을 위한 광촉매로 TiO2가 가장 널리 알려져 있으며, 기존의 상품보다 광촉매 활성도가 높은 촉매를 얻기 위해 Sol-Gel법을 이용하였다. TiO2 광촉매 제조를 위하여 전구체로서 Tetra-eth해-ortho-titanate(TEOT)를 이용하여 xerogeol 분말을 얻었으며, 광화학 반응의 효율을 측정하기 위해 분해대상 물질을 Dichloroacetic acid(DCA)로 선정하였다. 순수 titania 졸을 얻기 위한 최적조건은 알콕사이드 1몰당 물 40몰, 산 0.05몰이었고 pH의 범위는 3.3-3.6이었으며 Hexylene Glycol(HG)의 첨가량은 1몰임을 알 수 있었다. BET-N2방법을 이용하여 표면적을 측정한 결과 물/알콕 사이드의 몰비가 40-80범위에서 비표면적이 급격히 증가되어 DCA 의 광분해율도 증가하였으며, 몰 40몰을 첨가 후 졸-겔법으로 제조한 분말을 40$0^{\circ}C$에서 1시간 열처리한 anatase phase의 TiO2가 최고의 광분해 효율인 약 21%를 보였다. 이는 상업용으로 가장 효율이 높은 Dagussa P-25의 DCA 분해 효율보다 2배 정도 높은 것으로 나타났다.

• Journal of the Korean Ceramic Society
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• 제50권1호
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• pp.31-36
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• 2013

${\beta}$-SiC powders were synthesized by a carbothermal reduction process using $SiO_2$-C precursors fabricated by a sol-gel process using phenol resin and TEOS as starting materials for carbon and Si sources, respectively. The C/Si molar ratio was selected as an important parameter for synthesizing SiC powders using a sol-gel process, and the effects of the C/Si molar ratio (1.4-3.0) on the particle size, particle size distribution, and yield of the synthesized ${\beta}$-SiC powders were investigated. It was found that (1) the particle size of the synthesized ${\beta}$-SiC powders decreased with an increase in the C/Si molar ratio in the $SiO_2$-C hybrid precursors, (2) the particle size distribution widened with an increase in the C/Si molar ratio, and (3) the yield of the ${\beta}$-SiC powder production increased with an increase in the C/Si molar ratio.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.135-135
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• 2003

This paper presents the preparation of SnO$_2$ films by Sol-Gel process and using spin coating method, and their sensing properties in CO gas. Experimental procedure consisted of following steps: (1) Tin chloride(SnCl$_4$) and Ammonium hydrogen carbonate (NH$_4$HCO$_3$) were used as precursors; (2) the Sol solution with concentration of about 10wt% SnO$_2$ was prepared from washed Gel-precipitate for spin coating step; (3) thereafter, the coating solution was dropped onto the alumina (Al$_2$O$_3$) substrate that was then spun, the spin coating was carried out with total 10 times; (4) finally, the films were calcined for 3 hours at 50$0^{\circ}C$ or higher temperature (600, 700, 800 or 90$0^{\circ}C$) in order to obtain various gram sizes. The average grain size was calculated by Scherrer's equation using main peaks in XRD spectra; meanwhile the thickness, microstructure and surface morphology of the films were observed by FE-SEM.

• The Transactions of the Korean Institute of Electrical Engineers C
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• 제53권3호
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• pp.128-132
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• 2004

The perovskite ferroelectric materials of the PZT, SBT and BST series will attract much attention for application to ULSI devices. Among these materials, the BST ($Ba_0.6$$Sr_0.4$/$TiO_3$) is widely considered the most promising for use as an insulator in the capacitors of DRAMS beyond 1 Gbit and high density FRAMS. Especially, BST thin films have a good thermal-chemical stability, insulating effect and variety of Phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the surface characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.

• Journal of the Korean Ceramic Society
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• 제42권5호
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• pp.333-337
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• 2005

In order to improve the performance of green emitting phosphors for plasma display panel, the $Zn_2SiO_4:Mn,Al$ phosphors were synthesized using sol-gel technique and studied using SEM and VUV photoluminescence spectrometer. pH values of the starting solutions (pH = 0.5$\~$2.34) were controled by HCl as the catalysis of hydrolysis and wet gels were dried at $80^{\circ}C$ and $120^{\circ}C$, respectively. We investigated the effects of pH and drying temperatures during sol-gel processes. The results indicated that the phosphor prepared at pH = 1 showed the maximum emission intensity in both drying conditions and the effect of pH of the starting solution on morphology were increased with particle size as HCl and phosphor dried at high temperature showed more spherical and smaller particles than at low.

• Proceedings of the KIEE Conference
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1434-1436
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• 1996

In this study, ferroelectric $PbTiO_3$ thin films were deposited on the Pt/$SiO_2$/Si substrate by Sol-Gel method. $PbTiO_3$ stock solution was made and spin-cooled at 4000[rpm] for 30[sec.]. Coated specimens were dried at $400[^{\circ}C]$ for 10[min.] and then annealed at $500{\sim}800[^{\circ}C]$ for 1 hour. Annealing temperature were examined to optimize micro structural and dielectric properties of the films. The ferroelectric perovskite phase was observed in the file annealed at $700[^{\circ}C]$ for 1 hour. In the case of $PbTiO_3$ thin films annealed at $700[^{\circ}C]$ for hour, dielectric constant and dielectric loss showed the good value of 324, 2.0[%], respectively.