• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.759-763
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• 2016

We demonstrate the utilization of ion gel gate dielectrics for operating non-volatile transistor memory devices based on polymer semiconductor thin films. The gating process in typical electrolyte-gated polymer transistors occurs upon the penetration and escape of ionic components into the active channel layer, which dopes and dedopes the polymer film, respectively. Therefore, by controlling doping and dedoping processes, electrical current signals through the polymer film can be memorized and erased over a period of time, which constitutes the transistor-type memory devices. It was found that increasing the thickness of polymer films can enhance the memory performance of device including (i) the current signal ratio between its memorized state and erased state and (ii) the retention time of the signal.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1002-1004
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• 2009

Solution-processed indium-gallium-zinc-oxide thin-film transistors were fabricated by sol-gel method. By a combinatorial study of InGaZnO multi-component system, optimum molar ratio of In, Ga, and Zn has been selected. By adjusting the In:Ga:Zn molar ratio, TFTs with field-effect mobility of 0.5 ~ 1.5 $cm^2$/V-s, threshold voltage of -5 ~ 5 V, and subthreshold slope of 1.5 ~ 2.5 V/decade were achieved.

• Bulletin of the Korean Chemical Society
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• v.21 no.8
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• pp.817-822
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• 2000

Crack-free hard coating siIica films were prepared by sol-gel processfrom twokinds of silicon alkoxide (tetra-ethoxysilane and methyltrimethoxysilane) and two kinds of alcohol (methanol and isopropyl alcohol) with an acid catalyst,acetic acid. A silicate framework of the precursor solution was investigated by infrared spectros-copy (IR) in the process of hydrolysis and condensation. Theextent of the condensation in the intermediates was elucidated by gel permeation chromatography (GPC) and 29Si-NMR spectroscopy. The hard coating films werecharacterized by IR,scanning electron microscope (SEM), thermo gravimetric analyzer (TGA) and dif-ferential scanning calroimeter (DSC). The synthetic condition for the crack-free and transparent silica film for-mation was optimized interms of starting materials for the precursor solution as well as preparation method of the silica film.

• Bulletin of the Korean Chemical Society
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• v.22 no.12
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• pp.1366-1370
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• 2001

Thin films of the SiO2-TiO2-PDMS composite material have been prepared by the sol-gel dip coating method. Acid catalyzed solutions of tetraethoxy silane (TEOS) and polydimethyl siloxane (PDMS) mixed with titanium isopropoxide Ti(OiPr) were used as precursors. The optical and structural properties of the organically modified 70SiO2-30TiO2 composite films have been investigated with Fourier Transform Infrared Spectroscopy (FT-IR), UV-Visible Spectroscopy (UV-Vis), Differential Thermal Analysis (DTA) and prism coupling technique. The films coated on the soda-lime-silicate glass exhibit 450-750 nm thickness, 1.56-1.68 refractive index and 88-94% transmittance depending on the experimental parameters such as amount of PDMS, thermal treatment and heating rate. The optical loss of prepared composite film was measured to be about 0.34 dB/cm.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.373-376
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• 2012

Thin films of Ag-SiO2-TiO2 composite oxides with SiO2/TiO2 of 20/80 molar compositions were prepared by the sol-gel method, using tetraethylorthosilicate (TEOS) and titanium isopropoxide (TIP) as precursors. Ag-SiO2-TiO2 films coated on commercial glass substrates have successfully been synthesized using sol-gel method. The Ag-SiO2-TiO2 film with 0.5% Ag-added concentration and 20 mol% SiO2-mixture gives optimal results on crystalline structure, optical property, surface area, and photochromic property. Absorption near the wavelength of the incident light decreased gradually. The reversibility of the two-photon writing process in Ag-SiO2-TiO2 film is clearly seen.

• Solar Energy
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• v.12 no.2
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• pp.18-27
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• 1992

Multilayer coatings of $WO_3$ were deposited by the sol-gel technique on microscope slide glass and ITO coated glass. These films were characterized optically, chemically, and structurally by XRD, spectro-photometry, DTA/TGA, SEM/EDAX and RBS. Uniform $WO_3$ sol-gel films were dip coated on slide glass at dipping speed of 5mm/s. This sample indicated a low near IR transmittance in optical properties as a result of coloration using a dilute HCI electrolyte as the $H^+$ion sources. Differential thermal analysis results have allowed the accurate determination of the formation temperature of the $WO_3$ crystalline phase from the gel data in the range of $380^{\circ}C{\sim}500^{\circ}C$, consistent with crystallization temperature of sol-gel film. RBS spectrometry was performed on the uncolored $WO_3$ sol-gel film, yielding a chemical composition of $WO_3$.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.472-473
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• 2006

Maghemite and hematite nanospheres were synthesized by using the Sol-gel technique. The structural properties of these nanosphere powders were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM), and pore size distribution. Hematite phase shows crystalline structures. The mean particle size that resulted from BET and XRD analyses were 4.9 nm and 2 nm. It can be seen from transmission electron microscopy that the size of the particles are very small which is in good agreement with the FESEM and the X-ray diffraction. The BET and pore size method were employed for specific surface area determination.

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.49-54
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• 1989

Thin solid film systems polarizing beam splitter and disk amplifier used in the high power laser system ({{{{ lambda }}0=1060nm) are designed by computer aided optimization technique. Extinction ratio of designed polarizing beam splitter for incidence angle 30$^{\circ}$, 45$^{\circ}$, 55.60$^{\circ}$ are 1:93, 1:895, 1:1991. respectively. Maximum reflectance of designed thin film system of disk amplifier is less than 3% for pumping band (500-900nm) and 0.15% for laser beam. Further, SiO film chosen as one of the suitable thin films in the high power laser system is prepared by the sol=-gel process which gives high damage threshold. When the withdrawal speed is 6.15cm/min -16.62 cm/min and the mixing ratio is in the range of 1 mol (ethylsilicate): 4-8mol(ethylalcohol) : 2mol(water), the thickness of deposited film is in the range of 500{{{{ ANGSTROM }}-1500{{{{ ANGSTROM }}.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.357-360
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• 2019

We demonstrate an alignment technology using an imprinting process on an inorganic NiOx film. The aligned nanopattern was fabricated on a silicon wafer by laser interference lithography. The aligned nano pattern was then imprinted onto the sol-gel driven NiOx film using an imprinting process at an annealing temperature of $150^{\circ}C$. After the imprinting process, parallel grooves had been formed on the NiOx film. Atomic force microscopy and water contact angle measurements were performed to confirm the parallel groove on the NiOx film. The grooves caused liquid crystal alignment through geometric restriction, similar to grooves formed by the rubbing process on polyimide. The liquid crystal cell exhibited a pretilt angle of $0.2^{\circ}$, which demonstrated homogeneous alignment.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.153-158
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• 2003

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study,$La_{0.5}SR_{0.5}CoO_3$(LSCO) thin films as an electrode material for ferroelectric memories have been prepared by spin coating method using photosensitive sol solution. La-2methoxyethoxide, Sr-ethoxide, Co-2methoxyethoxide were used as starting materials. As UV exposure time to the LSCO gel thin film increased, the UV absorption peak intensity of metal${beta}$-diketonate decreased due to reduced solubility by M(metal)-O-M bond formation. Solubility difference by UV irradiation on LSCO gel thin film allows to obtain a fine patterning of thin film. The LSCO thin films annealed over$680{\circ}C$ in air showed perovskite phase and the lowest resistivity$(4{ imes}10^{-3}{Omega}cm)$ of the thin films were obtained by annealing at$740{\circ}C$.