• Title/Summary/Keyword: gating

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EXPERT KNOWLEDGE GATING MECHANISM IN THE HIERARCHICAL MODULAR SYSTEM

  • Shim, Jeong-Yon;Hong, You-Sik
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 2003.09a
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    • pp.288-291
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    • 2003
  • For the purpose of building the more efficient knowledge learning system, it is very important to make a good structure of the knowledge system first of all. The well designed knowledge system can make the stored knowledge to be easily accessed for knowledge acquisition and extraction. Expert knowledge can also play a good role for controlling. Accordingly, in this paper we propose the Hierarchical modular system with expert knowledge gating mechanism. This system consists of the mechanisms for knowledge acquisition, constructing the associative memory, knowledge inference and extraction according to the expert knowledge gating mechanism. We applied this system to the medical diagnostic area for classifying Virus(coxackie virus, echovirus, cold), Rhinitis(Nonallergic, allergic) and tested with symptom data

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Pulsed Power Modulator based on IGBTs (IGBT 기반 고압 펄스전원장치)

  • Ryoo, H.J.
    • Proceedings of the KIPE Conference
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    • 2007.11a
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    • pp.43-46
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    • 2007
  • In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important for series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used. Proposed scheme has lots of advantages such as long lifecyle, compact size, flat topped pulse forming, small weight, protection for arc, high efficiency and flexibility to generate various kinds of pulse output.

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High Repetitive Pulsed Power Supply Based on Semi-Conductor Switches (반도체 스위치 기반 고반복 펄스전원)

  • Jang, S.R.;Ahn, S.H.;Ryoo, H.J.;Kim, J.S.;Rim, G.H.
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1023_1024
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    • 2009
  • In this paper, a novel 10kV, 50A, 50kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 12 IGBT to generate maximum 10kV output pulse and 10kW full bridge phase-shifted zero voltage switching converter to charge DC capacitor voltage. Each IGBTs are sustain the 830V of capacitor voltage at turn off interval. By turn on the each IGBT for the same time it gives the path for the series connection of charged capacitor. From above turn on and off procedure, high voltage repetitive pulse is applied to the load. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, specially designed gate power circuit using full bridge inverter and pulse transformer is developed to generate IGBT gating signal.

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Modeling Negative Stiffness Mechanism of Vestibular Hair Cell by Applying Gating Spring Hypothesis to Inverted Pendulum Array (게이팅 스프링 가설을 적용한 전정기관 유모세포의 반강성 메커니즘 모델)

  • Lim, Ko-Eun;Park, Su-Kyung
    • Proceedings of the KSME Conference
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    • 2007.05a
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    • pp.405-408
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    • 2007
  • Vestibular hair cells, the sensory receptors of vestibular organs, selectively amplify miniscule stimuli to attain high sensitivity. Such selective amplification results in compressive nonlinear sensitivity, which plays an important role in expanding dynamic range while ensuring robustness of the system. In this study, negative stiffness mechanism, a mechanism responsible for the selective amplification by vestibular hair cells, is applied to a simple mechanical system consisting of an array of inverted pendulums. The structure and working principle of the system have been inspired by gating spring hypothesis proposing that opening and closing of transduction channels contributes to the global stiffness of vestibular hair bundle. Parameter study was carried out to analyze the effect of each parameter on the compressive nonlinearity of suggested model.

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Low Power Reliable Asynchronous Digital Circuit Design for Sensor System (센서 시스템을 위한 저전력 고신뢰의 비동기 디지털 회로 설계)

  • Ahn, Jihyuk;Kim, Kyung Ki
    • Journal of Sensor Science and Technology
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    • v.26 no.3
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    • pp.209-213
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    • 2017
  • The delay-insensitive Null Convention Logic (NCL) asynchronous design as one of innovative asynchronous logic design methodologies has many advantages of inherent robustness, power consumption, and easy design reuses. However, transistor-level structures of conventional NCL gate cells have weakness of high area overhead and high power consumption. This paper proposes a new NCL gate based on power gating structure. The proposed $4{\times}4$ NCL multiplier based on power gating structure is compared to the conventional NCL $4{\times}4$ multiplier and MTNCL(Multi-Threshold NCL) $4{\times}4$ multiplier in terms of speed, power consumption, energy and size using PTM 45 nm technology.

Design of 60KV, 300A, 3kHz Pulse Power Supply (60kV, 300A, 3kHz 펄스전원 장치 설계)

  • Ryoo, H.J.;Jang, S.R.;Kim, J.S.;Rim, G.H.;Gussev, G.I.
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.904-905
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    • 2008
  • In this paper, a novel 60kV, 300A, 3kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and 15kW series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 830VDC, 300A pulses. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used.

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Optimization of the Thin-walled Aluminum Die Casting Die Design by Solidification Simulation (응고 시뮬레이션에 의한 박육 알루미늄 다이캐스팅 금형 방안의 최적화)

  • Kim, Young-Chan;Cho, Se-Weon;Cho, Jae-Ik;Jeong, Chang-Yeol;Kang, Chang-Seog
    • Journal of Korea Foundry Society
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    • v.28 no.4
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    • pp.190-194
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    • 2008
  • Thin-walled die casting of aluminum notebook computer housing with less than 1mm thickness was investigated by using computational solidification simulation and actual casting experiment. Three different types of gate design, finger, tangential and split type, were used and the results showed that sound thin-walled die casting was possible with tangential and split type gating design because those gates allowed aluminum melt flowed into the thin-wall cavity uniformly and split type gating system was preferable gating design than tangential type at the point of view of soundness of casting and distortion generated after solidification. Also, solidification simulation agreed well with the actual die-casting and the casting showed no casting defect and distortion.

Analysis of Aging Phenomena in Nanomneter MOSFET Power Gating Structure (나노미터 MOSFET 파워 게이팅 구조의 노화 현상 분석)

  • Lee, Jinkyung;Kim, Kyung Ki
    • Journal of Sensor Science and Technology
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    • v.26 no.4
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    • pp.292-296
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    • 2017
  • It has become ever harder to design reliable circuits with each nanometer technology node under normal operation conditions, a transistor device can be affected by various aging effects resulting in performance degradation and eventually design failure. The reliability (aging) effect has traditionally been the area of process engineers. However, in the future, even the smallest of variations can slow down a transistor's switching speed, and an aging device may not perform adequately at a very low voltage. Because of such dilemmas, the transistor aging is emerging as a circuit designer's problem. Therefore, in this paper, the impact of aging effects on the delay and power dissipation of digital circuits by using nanomneter MOSFET power gating structure has been analyzed.. Based on this analyzed aging models, a reliable digital circuits can be designed.

Development of 60KV Pulse Power Supply using IGBT Stacks (IGBT 직렬구동에 의한 60KV 펄스 전원장치 개발)

  • Ryoo, H.J.;Kim, J.S.;Rim, G.H.;Sytykh, D.;Gussev, G.I.
    • Proceedings of the KIEE Conference
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    • 2006.07b
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    • pp.917-918
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    • 2006
  • In this paper, a novel new pulse power generatorbased on IGBT stacks is proposed for pulse power application. Proposed scheme consists of series connected 9power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is importantfor series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used.

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Gating System Design and Casting Simulation for the Submarine Mast Cover (잠수함 마스트 커버의 주조방안설계 및 주조해석)

  • Chul-Kyu Jin
    • Journal of the Korean Society of Industry Convergence
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    • v.26 no.5
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    • pp.945-952
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    • 2023
  • In this study, the sand casting process was applied to design the gating system and perform casting simulation in order to domestically produce the submarine mast cover. Based on simulation results, casting experiments were conducted to produce a soundness prototype. The design concept of the mast cover's gating system was based on the design of bell casting. By arranging eight tower-type gates in a circle at 45° intervals, the flow of melt flowing into each gate was uniform and did not mix with each other, and the velocity of melt was also uniform. The mast cover made of Ni-Al-Bronze alloy has no unfilled parts. However, small porosities and flow marks occurred on the surface in several places. Yield strength and ultimate tensile strength are 279.3 MPa and 675.7 MPa, respectively, and elongation is 21.2%.