• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.11
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• pp.1111-1116
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• 2011

In this paper, a 60 GHz bidirectional active phase shifter with 130 nm CMOS is presented by replacing CMOS passive switchs in switched-line type phase shifter with Common Gate Amplifier(bidirectional amplifier). Bidirectional active phase shifter is composed of bidirectional amplifier blocks and passive delay line network blocks. The suitable topology of bidirectional amplifier block is CGA(Common Gate Amplifier) topology and matching circuits of input and output are symmetrical due to design same characteristic of it's forward and reverse way. The direction(forward and reverse way) and amplitude of amplification can be controlled by only one bias voltage($V_{DS}$) using combination bias circuit. And passive delay line network blocks are composed of microstrip line. An 1-bit phase shifter is fabricated by Dongbu HiTek 1P8M 130-nm CMOS technology and simulation results present -3 dB average insertion loss and respectively 90 degree and 180 degree phase shift at 60 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.87-95
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• 2009

In this paper, an area-efficient FFT processor is proposed for MIMO-OFDM based SDR systems. The proposed scalable FFT processor can support the variable length of 64, 128, 512, 1024 and 2048. By reducing the required number of non-trivial multipliers with mixed-radix (MR) and multi-path delay commutator (MDC) architecture, the complexity of the proposed FFT processor is dramatically decreased without sacrificing system throughput The proposed FFT processor was designed in hardware description language (HDL) and synthesized to gate4eve1 circuits using 0.18um CMOS standard cell library. With the proposed architecture, the gate count for the processor is 46K and the size of memory is 64Kbits, which are reduced by 59% and 39%, respectively, compared with those of the 4-channel radix-2 single-path delay feedback (R2SDF) FFT processor. Also, compared with 4-channel radix-2 MDC (R2MDC) FFT processor, it is confirmed that the gate count and memory size are reduced by 16.4% and 26.8, respectively.

• Magazine of the Korean Society of Agricultural Engineers
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• v.45 no.1
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• pp.91-101
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• 2003

Boryeong Seadike located at southwestern seashore of Korean peninsula completed in 1997. Sluice gate operation can be an important factor to maintain lake water quality and reduce retaining time of pollutants within lake. The lake water quality simulation model, WASPS was adopted and tested to find out proper gate operation timing and discharge amount. From the simulation of sluice gate operation, the results showed that the later the time of discharge for loosing 1 day successively to 6 days, the better the quality of water. Discharge amount showed relatively minor changes of water quality. This means that pollutants flowed into lake from watershed do not have enough time to mix up with deep water when the gate opened at early time. About 3 days delay of discharge caused the dilution effect to stabilize the lake water quality in case of Boryeong freshwater lake.

• ETRI Journal
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• v.42 no.6
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• pp.912-921
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• 2020

Quantum-dot cellular automata (QCA) is an alternative complementary metal-oxide-semiconductor (CMOS) technology that is used to implement high-speed logical circuits at the atomic or molecular scale. In this study, an optimal 2-to-4 decoder in QCA is presented. The proposed QCA decoder is designed using a new formulation based on the MV32 gate. Notably, the MV32 gate has three inputs and two outputs, which is equivalent two 3-input majority gates, and operates based on cellular interactions. A multilayer design is suggested for the proposed decoder. Subsequently, a new and efficient 3-to-8 QCA decoder architecture is presented using the proposed 2-to-4 QCA decoder. The simulation results of the QCADesigner 2.0.3 software show that the proposed decoders perform well. Comparisons show that the proposed 2-to-4 QCA decoder is superior to the previously proposed ones in terms of cell count, occupied area, and delay.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.199-208
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• 1994

This paper proposes a delay fault test technique for ICs and PCBs with the boundary-scan architectures supporting ANSI/IEEE Std 1149.1-1990. The hybrid delay fault model, which comprises both of gate delay faults and path delay faults, is selected. We developed a procedure for testing delay faults in the circuits with typical boundary scan cells supporting the standard. Analyzing it,we concluded that it is impractical because the test clock must be 2.5 times faster than the system clock with the cell architect-ures following up the state transition of the TAP controller and test instruction set. We modified the boundary-scan cell and developed test instructions and the test procedure. The modified cell and the procedure need test clock two times slower than the system clock and support the ANSI/IEEE standard perfectly. A 4-bit ALU is selected for the circuits under test. and delay tests are simulated by the SILOS simulator. The simulation results ascertain the accurate operation and effectiveeness of the modified mechanism.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.5
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• pp.777-784
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• 2023

A sense amplifier is an essential peripheral circuit for designing a memory and is used to sense a small differential input signal and amplify it into digital signal. In this paper, a high-speed sense amplifier applicable to in-memory computing circuits is proposed. The proposed circuit reduces sense delay time through transistor Mtail that provides an additional discharge path and improves the circuit performance of the sense amplifier by applying m-GDI (: modified Gate Diffusion Input). Compared with previous structure, the sense delay time was reduced by 16.82%, the PDP(: Power Delay Product) by 17.23%, the EDP(: Energy Delay Product) by 31.1%. The proposed circuit was implemented using TSMC's 65nm CMOS process, while its feasibility was verified through SPECTRE simulation in this study.

• Journal of the Korean Professional Engineers Association
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• v.17 no.3
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• pp.32-49
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• 1984

The East gate station area is 205M long and 24m deep which is located 13 meter in front of cultural treasure east gate. The area to be excavated by blasting is composed of granite rocks from 10M depth to 25M. Surface earth extends to up 10M depth. This job site has in involves heavy traffic congestion such as over 10,000 cars passing in rush hour where clossing No 1 lint of subway running 3 minitues head way. This east gate station construction is to be executed for the provent of the setting down of underground level and blasting vibration effects to cultural treasure east gate. Therefore, the caltural treasure committee approved this execution subject to the following condition. 1. Subway gelogical foundation and measured natural frequency 2. Execution of water tight wall 3. Sellection and test of damping material for wall and under rail 4. Measurement of monitoring system during the execution 5. Measurement of histogram system The above two projects was carried out by Dr. Kwang team in KAIST and prof, Han in Hanyang University under accadamic study contract. In the blasting work, for the pourpose of reduced vibration and low explosion velocity such as CCR, Kovex slurry. The 2nd, used electrical caps shall be delay cap and M/S caps in multi delay. The 3rd, drilling pattern is bench cut in open cut and applied control blasting in tunnelling and also shall drill anti-vibration holes as line drilling.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.91-105
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• 2016

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.73-74
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• 2000

In recent years, attempts have been made to greatly improve the display quality of active-matrix liquid crystal display devices, and many techniques have been proposed to solve such problems as gate signal delay, feed-through voltage and image sticking[1-3]. To improve these problems which are caused by the feed-through voltage, we have evaluated new driving methods to reduce the feed-through voltage. Two level gate-pulse was used for the gate driving of the cst-on-common structure pixels. These gate driving methods offer better feed-through characteristics than conventional simple gate pulse. Optimized step signal will compensate by step pulse time and voltage. The evaluation of the suggested driving methods were performed by using a TFT-LCD array simulator PDAST which can simulate the gate, data and pixel voltages of a certain pixel at any time and at any location on a TFT array. The effect of the new driving method was effectively analyzed.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.416-428
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• 1999

A user-interactive pixel design tool for high-quality TFT-LCDs is realized and used to explore the sensitivity of the various array and device parameters for optimizing pixel design. In this tool, the Thompson cable equation and gradual-channel approximation were used for the gate time delay and TFT current modeling respectively. With this tool, each capacitance element, and TFT and array dimensions can be optimized under given design specifications. The electrical characteristics such ascharging ratio, gate time delay, pixel voltage level-shift, and holding ratio can be analyzed. The sensitivity analysis of those design parameters were executed and presented.