• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1809-1811
• /
• 1999

In recent years, attempts have been made to greatly improve the display quality of active-matrix liquid crystal display devices, and many techniques have been proposed to solve such problems as gate delay, feed-through voltage and image sticking. Gate delay is one of the biggest limiting factors for large-screen-size, high-resolution thin-film transistor liquid crystal display (TFT/LCD) design. Many driving method proposed for TFT/LCD progress. Thus we developed gate driving signal generator. Since Pixel-Design Array Simulation Tool (PDAST) can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the driving signals of gate lines on the pixel operations can be effectively analyzed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 1999.05a
• /
• pp.415-419
• /
• 1999

Many bipolar logic circuit of conventional occurred problem of speed delay according to deep saturation state of vertical NPN Transistor. In order to remove minority carries of the base region at changing signal in conventional bipolar logic circuit, we made transistor which is composed of NPN transistor shortened buried layer under the Base region, PNP transistor which is merged in base, epi layer and substrate. Also the Ring-Oscillator for measuring transmission time-delay per gate was designed as well. The structure of Gate consists of the vertical NPN Transistor, substrate and Merged PNP Transistor. In the result, we fount that tarriers which are coming into intrinsic Base from Emitter and the portion of edge are relatively a lot, so those make Base currents a lot and Gain is low with a few of collector currents because of cutting the buried layer of collector of conventional junction area. Merged PNP Transistor's currents are low because Base width is wide and the difference of Emitter's density and Base's density is small. we get amplitude of logic voltage of 200mv, the minimum of transmission delay-time of 211nS, and the minimum of transmission delay-time per gate of 7.26nS in AC characteristic output of Ring-Oscillator connected Gate.

• Journal of IKEEE
• /
• v.3 no.1 s.4
• /
• pp.50-56
• /
• 1999

This paper presents a new technique for generating precise clock delays. The technique can obtain finer timing resolution less than the gate delay of the delay chain by locking in multiple clock period. Using this technique, a 250ps of timing resolution could be achieved from a 750ps delay of the single delay stage in a DLL(Delay Locked Loop) structure. The delay chain of the proposed circuit is locked on three times of the clock period and a finer delay resolution than the absolute gate delay is achieved and verified through the simulation.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.23 no.1
• /
• pp.42-45
• /
• 1986

This paper introduces novel functionally integrated logic elements which are conceptuallized for large scale integrated circuits. Efforts are made to minimize the gate size as well as to reduce the operational voltage, without sacrificing the speed performance of the gates. The process used was a rather conventional collector diffusion isolation(CDI) process. New gate structures are formed by merging several transistors of a gate in the silicon substrate. Thested elements are CML(Current Mode Logic) and EECL (Emitter-to-Emitter Coupled Logic)gates. The obtained experimental results are power-delay product of 6~11pJ and delay time/gate of 1.6~1.8 ns, confirming the possibility of these novel gate structures as a VLSI-candidate.

• KIPS Transactions on Computer and Communication Systems
• /
• v.2 no.3
• /
• pp.103-110
• /
• 2013

Logical Effort [1, 2] is a simple hand-calculated method that measures quick delay estimation. It has the advantage of reducing the design cycle time. However, it has shortcomings in designing a path for minimum area or power under a fixed-delay constraint. The method of overcoming the shortcomings is shown in [3], but it is constrained for a single logical path. This paper presents an advanced gate sizing method in multiple logical paths based on the equal delay model. According to the results of the simulation, the power dissipation for both the existing logical effort method and proposed method is almost equal. However, compared with the existing logical effort method, it is about 52 (%) more efficient in space.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.21-25
• /
• 1999

In order to remove minority carries of the base region at changing signal in conventional bipolar logic circuit, we made transistor which is composed of NPN transistor shortened buried layer under the Base region, PNP transistor which is merged in base, epi layer and substrate. Also the Ring-Oscillator for measuring transmission time-delay per gate was designed as well. In the result, we get amplitude of logic voltage of 200mV, the minimum of transmission delay-time of 211nS, and the minimum of transmission delay-time per gate of 7.26ns in AC characteristic output of Ring-Oscillator connected Gate.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.882-886
• /
• 2005

As the TFT-LCD panels become larger and provide higher resolution, the distributed capacitive and resistive lines induce the propagation delay, reduce the TFT-on time and deteriorate the pixel chargingratio. A number of the compensation methods, like the H-LDC (Horizontal Line Delay Compensation), have been proposed to compensate the propagation delay of the large and high resolution panels [1]. These methods, however, require the comparatively accurate gate propagation delay estimates at each column driver. In this paper, by observing the actual gate and data waveform from 15-inch XGA TFT-LCD panels, we could predict the propagation delay along the row and column line.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.1
• /
• pp.131-144
• /
• 2015

An extensive investigation of the influence of gate engineering on the CNTFET switching, high frequency and circuit level performance has been carried out. At device level, the effects of gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. It is revealed that hetero - material - gate CNTFET(HMG - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, and is more suitable for use in low power and high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the performance parameters of circuits have been calculated and the optimum combinations of ${\Phi}_{M1}/{\Phi}_{M2}/{\Phi}_{M3}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product(PDP). We show that, compared to a traditional CNTFET - based circuit, the one based on HMG - CNTFET has a significantly better performance (SNM, energy, PDP). In addition, results also illustrate that HMG - CNTFET circuits have a consistent trend in delay, power, and PDP with respect to the transistor size, indicating that gate engineering of CNTFETs is a promising technology. Our results may be useful for designing and optimizing CNTFET devices and circuits.

• Journal of the Korean Institute of Telematics and Electronics C
• /
• v.36C no.12
• /
• pp.59-68
• /
• 1999

The timing characteristics of an ASIC are analyzed based on the propagation delays of each gate and interconnect wire. The gate delay can be modeled using the two-dimensional delay table whose index variables are the input transition time and the output load capacitance. The AWE technique can be adopted as an algorithm to compute the interconnect delay. Since these delays are affected by the interaction to the two-dimensional delay table and the AWE technique. A method to model this effect has been proposed through the effective capacitance and the gate driver model under the assumption of single driving gate. This paper presents a new technique to handle the multiple CMOS gates driving interconnect wire by extending previous approach. This technique has been implemented in C language and applied to several interconnect circuits driven by multiple CMOS gates. In most cases, we found a few tens of speed-up and only a few percents of errors in computing both of gate and interconnect delays, compared to SPICE.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.51 no.8
• /
• pp.156-164
• /
• 2014

In a delay line type of a time-to-digital converter implemented in Field Programmable Gate Array, the timing accuracy decreases for a longer carry chain. In this paper, we propose a structure that has a multi-phase clock and a state machine to check metastability; this would reduce the required length of the carry chain with the same time resolution. To reduce the errors caused by the time difference in the four delay lines associated with a four-phase clock, the proposed TDC generates a single input pulse from four phase clocks and uses a single delay line. Moreover, the state machine is designed to find the phase clock that is used to generate the single input pulse and determine the metastable state without a synchronizer. With the measurement range of 1 ms, the measured resolution was 22 ps, and the non-linearity was 25 ps.