• 한국포장학회지
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• 제13권3_4호
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• pp.113-120
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• 2007

The method to characterize the fresh produce respiration was presented with possible application of modified atmosphere package design. Particularly the respiration model based on enzyme kinetics was introduced as function of oxygen and carbon dioxide concentrations. The method to estimate the equilibrated package atmosphere for any package conditions was presented by incorporation of $O_2$ and $CO_2$ permeabilities of the packaging film. Temperature dependences for fresh produce respiration and gas permeation were given by Arrhenius equation and then used to analyze the effect of temperature on the package atmosphere. An example analysis was presented for better understanding of the concept.

• 한국가금학회지
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• 제17권3호
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• pp.203-209
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• 1990

닭고기를 $4^{\circ}C$에서 냉장 보관할 경우 포장방법이 닭고기의 저장성에 미치는 영향을 검토하였다. 닭고기의 저장성은 저장 중 닭고기의 표면 미생물 및 이화학적 품질을 조사함으로서 결정하였으며 사용된 닭고기는 포장하기 전에 7.5% potassium sorbate용액에 미리 침지한 후 일반포장, 진공포장, 혼합가스포장 등의 포장을 하였다. 이렇게 조사된 포장 닭고기의 저장성은 일반포장육의 경우에는 $19\pm3$일간, 진공포장육의 경우에는 $30\pm5$일간, 10% $CO_2$가스와 90% $N_2$가스 조성의 혼합가스 포장육의 경우에는 $26\pm4$일간, 20% $CO_2$ 가스와 80% $N_2$가스 조성의 혼합가스 포장육의 경우에는 $30\pm5$일간으로 나타나 진공포장육과 20% $CO_2$가스와 80% $N_2$ 가스 조성의 혼합가스 포장육의 경우가 가장 높은 저장성을 나타내었다. 그러나 진공포장의 경우에는 진공시의 압력차로 육즙이 침출 되어 포장지 내부에 고여 있는 등 혼합가스 포장에 비해 관능적으로 나빠 20% $CO_2$가스와 80% $N_2$ 가스 조성의 혼합가스 포장이 기호성과 저장성을 고려할 때 가장 바람직한 포장방법으로 평가되었다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.255-258
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• 2002

In this study, $CeO_2$thin films were etched with an addition of $Cl_2$gas to $Ar/CF_4$gas mixing in an inductively coupled plasma(ICP) etcher. The surface reactions of the etched $_CeO2$thin films were investigated by X-ray photoelectron spectroscopy(XPS). It was analyzed that Ce peaks were mainly observed in Ce-O bonds formed $CeO_2$or $CeO_3$compounds. Cl peaks were detected by the peaks of Cl $2p_{3/2}$ and Cl $2p_{1/2}$. Almost all of Cl atoms were combined with Ce atoms like $CeCl_{x}$ compounds.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.198-202
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• 2002

$HfO_2$films were grown on Si substrate in the temperature range $250~550^{\circ}C$ using metal organic chemical vapor deposition (MOCVD) technique for a gate dielectric. Hafnium tart-butoxide and Oxygen gas were used as precursors and N2 was used as carrier gas. Impurity distribution and film structure(including interfacial layer) were studied at the deposition temperature range between 25$0^{\circ}C$ and $550^{\circ}C$. The growth rate and impurty distribution decreased with increasing temperature. The electrical properties of $HfO_2$were investigated with C-V, 1-V method and showed it has a good properties as a gate dielectric.

• 한국식품위생안전성학회:학술대회논문집
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• 한국식품위생안전성학회 2001년도 The Asia-Pacific Conference on Reproductive Biology and Environmental Sciences
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• pp.140-140
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• 2001

A sensitive analytical method based on gas chromatograpy-mass spectrometry with a selected ion monitoring (GC/MS-SIM) with the purge-and-trap concentration and with headspace method (in limited applications) was developed for determining of epichlorohydrin in canned beverages coated with epoxy resin. The calibration curve in the range of $0.5\sim50ng$ had correlation coefficient greater than 0.998 and a detection limit of $0.l\mug/L$ was obtained using a sample volume of 20ml. The predominant ions of epichlorohydrin produced in MSD using electron ionization(EI) were m/z 57 ([M-CI]+) and 62/64 $([M-CH_2O]+)$. In survey of epichlorohydrin in thirty commercial canned beverage samples, none of them was detected.

• 한국포장학회지
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• 제24권1호
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• pp.27-34
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• 2018

In this work, nano ZnO was introduced into low density poly ethylene (LDPE) composites films with various contents (0, 0.5, 1.0, 3.0 and 5.0 wt%) by melt-extrusion. Their basic properties such as crystallinity, chemical bonds and surface morphology were examined by XRD, FTIR and SEM. XRD patterns and FTIR peaks intensity were increased in proportion to the ZnO contents. SEM images showed well dispersed nano ZnO in LDPE composite films. Antimicrobial functionality of LDPE-nano ZnO composite films was also studied and the presence of nano ZnO resulted in significant improvement of antimicrobial functionality compared to the pure LDPE film. To evaluate influence of nano ZnO on LDPE properties required as packaging material, thermal, mechanical, gas barrier and optical properties of LDPE-nano ZnO composite films were characterized with various analytical techniques including TGA, UTM, OTR, WVTR and UV-Vis spectroscopy. As a result, except optical and mechanical properties of LDPE, no significant effects were found in other properties. Opacity of pure LDPE was greatly increased with increasing concentration of nano ZnO and tensile strength was also improved at 0.5wt% ZnO content.

• 식품기술
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• 제25권3호
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• pp.230-256
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• 2012

• 마이크로전자및패키징학회지
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• 제8권1호
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• pp.13-18
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• 2001

본 연구에서 RF 플라즈마를 이용한 촉매 화학기상증착법에 의하여 탄소나노튜브를 성장시켰다. 탄소나노튜브는 Ni이 증착된 강화 유리 기판위에 $600^{\circ}C$ 이하의 공정 온도에서 성장되었으며, 성장시 성장 온도와 에칭 시간 그리고 Ni 층의 두메에 따라 탄소나노튜브 성장 특성이 다양하게 나타났다. Ni이 증착된 강화 유리기판위에 탄소나노튜브를 성장시키기 위하여 에칭 가스로는 $H_2$와 $NH_3$가스를 사용하였고, 탄소 원료로 $C_2H_2$가스를 사용하였다. 수직 배향된 탄소나노튜브의 직경과 길이는 약 150 nm와 3 $\mu\textrm{m}$ 정도의 크기로 성장되었다. 촉매 화학기상증착법을 이용하여 성장된 탄소나노튜브는 FED의 에미터로 사용이 기대된다.

• 마이크로전자및패키징학회지
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• 제11권4호
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• pp.29-35
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• 2004

암모니아 펄스플라즈마를 이용하여 $WF_6$ 가스와 $NH_3$ 가스를 교대로 흘려줌으로써 Si 기판위에 질화텅스텐 확산방지막을 증착하였다. $WF_6$ 가스는 Si과 반응하여 표면침식이 과도히 발생하였으나 암모니아 ($NH_3$)가스를 펄스 플라즈마를 인가하여 $WF_6$와 같이 사용하면 Si 표면을 질화처리 함으로써 표면침식을 막아주며 질화텅스텐 박막을 쉽게 증착할 수 있었다. 그 이유는 암모니아 가스의 분해를 통한 Si 기판의 흡착을 용이하게 하여 질화텅스텐 박막 증착이 가능하기 때문이다. 이러한 증착 미케니즘과 암모니아 펄스 플라즈마 효과에 대하여 조사하였다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 추계기술심포지움논문집
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• pp.115-121
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• 2002

In this research we have investigated the characteristics of ultra thin $HfO_2 /SiON$stack structure films using several analytical techniques. SiON layer was thermally grown on standard SCI cleaned silicon wafer at $825^{\circ}C$ for 12sec under $N_2$O ambient. $HfO_2 /SiON$$_4$/$H_2O$ as precursors and $N_2$as a carrier/purge gas. Solid HfCl$_4$was volatilized in a canister kept at $200^{\circ}C$ and carried into the reaction chamber with pure $N_2$carrier gas. $H_2O$ canister was kept at $12^{\circ}C$ and carrier gas was not used. The films were grown on 8-inch (100) p-type Silicon wafer at the $300^{\circ}C$ temperature after standard SCI cleaning, Spectroscopic ellipsometer and TEM were used to investigate the initial growth mechanism, microstructure and thickness. The electrical properties of the film were measured and compared with the physical/chemical properties. The effects of heat treatment was discussed.