Role of CH2F2 and N-2 Flow Rates on the Etch Characteristics of Dielectric Hard-mask Layer to Extreme Ultra-violet Resist Pattern in CH2F2/N2/Ar Capacitively Coupled Plasmas
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- 한국진공학회:학술대회논문집
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- 한국진공학회 2011년도 제40회 동계학술대회 초록집
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- pp.210-210
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- 2011