• Title/Summary/Keyword: free abrasive

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A Study on Semi Abrasive Free Slurry including Acid Colloidal Silica for Copper Chemical Mechanical Planarization (구리 CMP 적용을 위한 산성 콜로이드 실리카를 포함한 준무연마제 슬러리 연구)

  • 김남훈;김상용;서용진;김태형;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.3
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    • pp.272-277
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    • 2004
  • The primary aim of this study is to investigate new semi-abrasive free slurry including acid colloidal silica and hydrogen peroxide for copper chemical-mechanical planarization (CMP). In general, slurry for copper CMP consists of colloidal silica as an abrasive, organic acid as a complex-forming agent, hydrogen peroxide as an oxidizing agent, a film forming agent, a pH control agent and several additives. We developed new semi-abrasive free slurry (SAFS) including below 0.5% acid colloidal silica. We evaluated additives as stabilizers for hydrogen peroxide as well as accelerators in tantalum nitride CMP process. We also estimated dispersion stability and Zeta potential of the acid colloidal silica with additives. The extent of enhancement in tantalum nitride CMP was verified through anelectrochemical test. This approach may be useful for the application of single and first step copper CMP slurry with one package system.

Study on Cu CMP by using Semi-Abrasive Free Slurry (준 무연마제 슬러리를 아용한 Cu CMP 연구)

  • Kim, Nam-Hoon;Lim, Jong-Heun;Eom, Jun-Chul;Kim, Sang-Yong;Kim, Chang-Il;Chang, Eui-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.158-161
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    • 2003
  • The primary aim of this study is to investigate new semi-abrasive free slurry including acid colloidal silica and hydrogen peroxide for copper chemical-mechanical planarization (CMP). In general, slurry for copper CMP consists of colloidal silica as an abrasive, organic acid as a complex-forming agent, hydrogen peroxide as an oxidizing agent, a film forming agent, a pH control agent and several additives. We developed new semi-abrasive free slurry (SAFS) including below 0.5% acid colloidal silica. We evaluated additives as stabilizers for hydrogen peroxide as well as accelerators in tantalum nitride CMP process. We also estimated dispersion stability and Zeta potential of the acid colloidal silica with additives. The extent of enhancement in tantalum nitride CMP was verified through anelectrochemical test. This approach may be useful for the application of single and first step copper CMP slurry with one package system.

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Compound Machining of Milling and Magnetic Abrasive Polishing for Free Form Surface (자유곡면의 밀링 자기연마 복합가공에 관한 연구)

  • Kwak, Tae-Kyung;Kim, Sang-Oh;Kwak, Jae-Seob
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.19 no.4
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    • pp.455-461
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    • 2010
  • Automated magnetic abrasive polishing which can be applied after machining of the mold on a machine tool without unloading is very effective for finishing a complicated injection mold surface. This study aims to realize one step polishing of free form surface with the same machine tool. For this purpose, magnetic flux density according to the change of curvature radii was simulated for selecting polishing conditions and experimental verification was performed with a complicated mold of aluminum alloy. As a result, it was seen by the simulation that the magnetic flux density at a gradual curvature of the mold was higher than at a steep curvature and the higher magnetic flux density produced the better surface roughness in the experimentation. The deviation for the surface roughness of the mold decreased on the whole and the uniform mold surface was obtained after the automated magnetic abrasive polishing.

Effects of Polymer Adsorption on Stabilities and CMP Performance of Ceria Abrasive Particles

  • Shimono Norifumi;Kawaguchi Masami;Koyama Naoyuki
    • Transactions on Electrical and Electronic Materials
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    • v.7 no.3
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    • pp.112-117
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    • 2006
  • In this paper we present that the effects of polymer adsorption on stabilities and CMP performance of ceria abrasive particles. Characterization of ceria abrasive particles in the presence of poly(vinyl pyrrolidone) (PVP) was performed by the measurements of adsorbed amounts of PVP, average sizes, and the back scattering intensities of the ceria abrasive particles as functions of PVP molecular weight and PVP concentration. The ceria abrasive particles in the presence of PVP were used to polish $SiO_2\;and\;Si_3N_4$ films deposited on Si wafers in order to understand the effect of PVP adsorption on chemical mechanical polishing (CMP) performance, together with ceria abrasive particles without PVP. Adsorption of PVP on the ceria abrasive particles enhanced the stability of ceria abrasive particles due to steric stabilization of the thick adsorbed layer of PVP. Removal rates of the deposited $SiO_2\;and\;Si_3N_4$ films by the ceria abrasive particles in the presence of PVP were much lower than those in the absence of PVP and their magnitudes were decreased with an increase in the concentration of free PVP chains in the dispersion media. This suggests that the CMP performance in the presence of PVP could be mainly controlled by the hydrodynamic interactions between the adsorbed PVP chains and the free ones. Moreover, the molecular weight dependence of PVP on the removal rates of the deposited films was hardly observed. On the other hand, high removal rate selectivity between the deposited films in the presence of PVP was not observed.

Effect on the Deburring of Spring Collet Burr by Abrasive Flow System (입자유동시스템에 의한 스프링콜릿 버의 디버링 효과)

  • 김정두
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 1998.10a
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    • pp.192-197
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    • 1998
  • Abrasive flow machining is useful to abrasive polish a internal or external surface of the free shape dimensional parts, which are used in many fields such as machine tool parts, semi-conductor, and medical component industries. The machining process is that two hydraulic cylinders, which are located surface to surface, are enforce media to the passage between workpiece and tooling part alternately, and then the abrasives included in the media pass the passage and polish the surface of workpiece. The media which is made of polymer and abrasive plays complex have workpiece by its viscoelastic characteristics. In this study, the media for AMF was made by mixing viscoelastic polymer with alumina and silicon carbide abrasive respectively. As a result, alumina include media is also the experiments of deburring the inside burr of in order to analyse the deburring machinability of abrasive flow machining according to various machining parameters which were media flow rate extrusion pressure, passage gap, media viscosity, abrasive content, and abrasive grain size.

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Tungsten CMP in Fixed Abrasive Pad using Hydrophilic Polymer (친수성 고분자를 이용한 고정입자패드의 텅스텐 CMP)

  • 박범영;김호윤;김형재;김구연;정해도
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.7
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    • pp.22-29
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    • 2004
  • As a result of high integration of semiconductor device, the global planarization of multi-layer structures is necessary. So the chemical mechanical polishing(CMP) is widely applied to manufacturing the dielectric layer and metal line in the semiconductor device. CMP process is under influence of polisher, pad, slurry, and process itself, etc. In comparison with the general CMP which uses the slurry including abrasives, fixed abrasive pad takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing & erosion due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of fixed abrasive pad using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. And the tungsten CMP using fixed abrasive pad achieved the good conclusion in terms of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

Tungsten CMP using Fixed Abrasive Pad with Self-Conditioning (Self-Conditioning을 이용한 고정입자패드의 텅스텐 CMP)

  • Park, Boum-Young;Kim, Ho-Youn;Seo, Heon-Deok;Jeong, Hae-Do
    • Proceedings of the KSME Conference
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    • 2003.04a
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    • pp.1296-1301
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    • 2003
  • The chemical mechanical polishing(CMP) is necessarily applied to manufacturing the dielectric layer and metal line in the semiconductor device. The conditioning of polishing pad in CMP process additionally operates for maintaining the removal rate, within wafer non-uniformity, and wafer to wafer non-uniformity. But the fixed abrasive pad(FAP) using the hydrophilic polymer with abrasive that has the swelling characteristic by water owns the self-conditioning advantage as compared with the general CMP. FAP also takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing due to the reduction of abrasive concentration. This paper introduces the manufacturing technique of FAP. And the tungsten CMP using FAP achieved the good conclusion in point of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

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The Study of ILD CMP Using Abrasive Embedded Pad (고정입자 패드를 이용한 층간 절연막 CMP에 관한 연구)

  • 박재홍;김호윤;정해도
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2001.04a
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    • pp.1117-1120
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    • 2001
  • Chemical mechanical planarization(CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There have been serious problems in CMP in terms of repeatability and defects in patterned wafers. Since IBM's official announcement on Copper Dual Damascene(Cu2D) technology, the semiconductor world has been engaged in a Cu2D race. Today, even after~3years of extensive R&D work, the End-of-Line(EOL) yields are still too low to allow the transition of technology to manufacturing. One of the reasons behind this is the myriad of defects associated with Cu technology. Especially, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasive and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using Ce$O_2$ is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method for developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

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The Study of Metal CMP Using Abrasive Embedded Pad (고정입자 패드를 이용한 텅스텐 CMP에 관한 연구)

  • Park, Jae-Hong;Kim, Ho-Yun;Jeong, Hae-Do
    • Journal of the Korean Society for Precision Engineering
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    • v.18 no.12
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    • pp.192-199
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    • 2001
  • Chemical mechanical planarization (CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There hale been serious problems in CMP in terms of repeatability and deflects in patterned wafers. Especial1y, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasives and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using CeO$_2$is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method fur developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

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Study on the Lapping Characteristics of Sapphire Wafer by using a Fixed Abrasive Plate (고정 입자 정반을 이용한 사파이어 기판의 연마 특성 연구)

  • Lee, Taekyung;Lee, Sangjik;Jo, Wonseok;Jeong, Haedo;Kim, Hyoungjae
    • Tribology and Lubricants
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    • v.32 no.2
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    • pp.44-49
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    • 2016
  • Diamond mechanical polishing (DMP) is a crucial process in a sapphire wafering process to improve flatness and achieve the target thickness by using free abrasives. In a DMP process, material removal rate (MRR) is a key factor to reduce process time and cost. Controlling mechanical parameters, such as velocity and pressure, can increase the MRR in a DMP process. However, there are limitations of using high velocities and pressures for achieving a high MRR owing to their side effects. In this paper, we present the lapping characteristics and improvement of MRR by using a fixed abrasive plate through an experimental study. The change in MRR as a function of velocity and pressure follows Preston's equation. The surface roughness of a wafer decreases as the plate velocity and pressure increases. We observe a sharp decrease in MRR over the lapping time at a high velocity and pressure in the velocity and pressure test. An analysis of surface roughness (Rq and Rpk) indicates that wear of abrasives decreases the MRR sharply. In order to investigate the effect of abrasive wear on the MRR, we utilize a cutting fluid and a rough wafer. The cutting fluid delays the wear of abrasives resulting in improvement of MRR drop. The rough wafer maintains the MRR at a stable rate by self-dressing.