Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on Semi Abrasive Free Slurry including Acid Colloidal Silica for Copper Chemical Mechanical Planarization

구리 CMP 적용을 위한 산성 콜로이드 실리카를 포함한 준무연마제 슬러리 연구

  • 김남훈 (중앙대학교 전자전기공학부) ;
  • 김상용 ((주)동부아남반도체) ;
  • 서용진 (대불대학교 전기전자공학과) ;
  • 김태형 (여주대학 전기시스템디자인과) ;
  • 장의구 (중앙대학교 전자전기공학부)
  • Published : 2004.03.01
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Abstract

The primary aim of this study is to investigate new semi-abrasive free slurry including acid colloidal silica and hydrogen peroxide for copper chemical-mechanical planarization (CMP). In general, slurry for copper CMP consists of colloidal silica as an abrasive, organic acid as a complex-forming agent, hydrogen peroxide as an oxidizing agent, a film forming agent, a pH control agent and several additives. We developed new semi-abrasive free slurry (SAFS) including below 0.5％ acid colloidal silica. We evaluated additives as stabilizers for hydrogen peroxide as well as accelerators in tantalum nitride CMP process. We also estimated dispersion stability and Zeta potential of the acid colloidal silica with additives. The extent of enhancement in tantalum nitride CMP was verified through anelectrochemical test. This approach may be useful for the application of single and first step copper CMP slurry with one package system.

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