• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.763-768
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• 2005

Bare-chip packaging becomes more popular along with the miniaturization of IT components. In this paper, we have studied flip-chip process, and developed automated bonding system. Among the several bonding method, NCP bonding is chosen and batch-type equipment is manufactured. The dual optics and vision system aligns the chip with the substrate. The bonding head equipped with temperature and force controllers bonds the chip. The system can be easily modified for other bonding methods such as ACF In bonding process, the bonding forte and temperature are known as the most dominant bonding parameters. A parametric study is performed for these two parameters. For the test sample, we used standard flip-chip test kit which consists of FR4 boards and dummy flip-chips. The bonding test was performed fur two types of flip-chips with different chip size and lead pitch. The bonding temperatures are chosen between $25^{\circ}C\;to\;300^{\circ}C$. The bonding forces are chosen between 5N and 300N. The bonding strength is checked using bonding force tester. After the bonding force test, the samples are examined by microscope to determine the failure mode. The relations between the bonding strength and the bonding parameters are analyzed and compared with bonding models. Finally, the most suitable bonding condition is suggested in terms of temperature and force.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.61-71
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• 1999

The recent trend toward higher frequencies, miniaturization and lower-cost in wireless communication equipment is demanding high density packaging technologies such flip chip interconnection and multichip module(MCM) as a substitute of conventional plastic package. With analyzing the recently reported research results of the RF flip chip, this paper presents the technical issues and advantages of RF flip chip and suggest the flip chip technologies suitable for the development stage. At first, most of RF flip chips are designed in a coplanar waveguide line instead of microstrip in order to achieve better electrical performance and to avoid the interaction with a substrate. Secondly, eliminating wafer back-side grinding, via formation, and back-side metallization enables the manufacturing cost to be reduced. Finally, the electrical performance of flip chip bonding is much better than that of plastic package and the flip chip interconnection is more suitable for Transmit/Receiver modules at higher frequency. However, the characterization of CPW designed RF flip chip must be thoroughly studied and the Au stud bump bonding shall be suggested at the earlier stage of RF flip chip development.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.469-470
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• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.519-520
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• 2008

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.09a
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• pp.253-257
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• 2003

The low temperature flip chip technique is applied to the package of the temperature-sensitive devices for LCD systems and image sensors since the high temperature process degrades the polymer materials in their devices. We will introduce the various low temperature flip chip bonding techniques; a conventional flip chip technique using eutectic Bi-Sn (mp: $138^{\circ}C$) or eutectic In-Ag (mp: $141^{\circ}C$) solders, a direct bump-to-bump bonding technique using solder bumps, and a low temperature bonding technique using low temperature solder pads.

• Journal of Welding and Joining
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• v.20 no.4
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• pp.498-504
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• 2002

Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.

• Journal of Welding and Joining
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• v.26 no.3
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• pp.30-36
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• 2008

A flip-chip bonding system using IR laser with a wavelength of 1064 nm was developed and associated process parameters were analyzed using Taguchi methods. An infrared laser beam is designed to transmit through a silicon chip and used for transferring laser energy directly to micro-bumps. This process has several advantages: minimized heat affect zone, fast bonding and good reliability in the microchip bonding interface. Approximately 50 % of the irradiated energy can be directly used for bonding the solder bumps with a few seconds of bonding time. A flip-chip with 120 solder bumps was used for this experiment and the composition of the solder bump was Sn3.0Ag0.5Cu. The main processing parameters for IR laser flip-chip bonding were laser power, scanning speed, a spot size and UBM thickness. Taguchi methods were applied for optimizing these four main processing parameters. The optimized bump shape and its shear force were modeled and the experimental results were compared with them. The analysis results indicate that the bump shape and its shear force are dominantly influenced by laser power and scanning speed over a laser spot size. In addition, various effects of processing parameters for IR laser flip-chip bonding are presented and discussed.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.17-24
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• 2012

Recently, flip chip interconnection has been increasingly used in microelectronic assemblies. The common Flip chip interconnection is formed by reflow of the solder bumps. Lead-Tin solders and Tin-based solders are most widely used for the solder bump materials. However, the flip chip interconnection using these solder materials cannot be applied to temperature-sensitive components since solder reflow is performed at relatively high temperature. Therefore the development of low temperature bonding technologies is required in these applications. A few bonding techniques at low temperature of $150^{\circ}C$ or below have been reported. They include the reflow soldering using low melting point solder bumps, the transient liquid phase bonding by inter-diffusion between two solders, and the bonding using low temperature curable adhesive. This paper reviews various low temperature bonding methods.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.1
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• pp.120-125
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• 2008

A flip-chip bonding system using DPSS(Diode Pumped Solid State) Nd:YAG laser(wavelength : 1064nm) which shows a good quality in fine pitch bonding is developed. This laser bonder can transfer beam energy to the solder directly and melt it without any physical contact by scanning a bare chip. By using a laser source to heat up the solder balls directly, it can reduce heat loss and any defects such as bridge with adjacent solder, overheating problems, and chip breakage. Comparing to conventional flip-chip bonders, the bonding time can be shortened drastically. This laser precision micro bonder can be applied to flip-chip bonding with many advantage in comparison with conventional ones.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.10a
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• pp.39-45
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• 2000

A small camera module fabricated by including bare chip bonding methods is utilized to realize advanced mobile devices. One of the driving forces is the TOG (Tape On Glass) bonding method which reduces the packaging size of the image sensor clip. The TOG module is a new thinner and smaller image sensor module, using flip chip interconnection method with the ACP (Anisotropic Conductive Paste). The TOG production process was established by determining the optimum bonding conditions for both optical glass bonding and image sensor clip bonding lo the flexible PCB. The bonding conditions, including sufficient bonding margins, were studied. Another bonding method is the flip chip bonding method for DSP (Digital Signal Processor) chip. A new AC\ulcorner was developed to enable the short resin curing time of 10 sec. The bonding mechanism of the resin curing method was evaluated using FEM analysis. By using these flip chip bonding techniques, small camera module was realized.