• Title/Summary/Keyword: flexible transparent film

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A Review on Transfer Process of Two-dimensional Materials

  • Kim, Chan;Yoon, Min-Ah;Jang, Bongkyun;Kim, Jae-Hyun;Kim, Kwang-Seop
    • Tribology and Lubricants
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    • v.36 no.1
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    • pp.1-10
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    • 2020
  • Large-area two-dimensional (2D) materials synthesized by chemical vapor deposition on donor substrates are promising functional materials for conductors, semiconductors, and insulators in flexible and transparent devices. In most cases, 2D materials should be transferred from a donor substrate to a target substrate; however, 2D materials are prone to damage during the transfer process. The damages to 2D materials during transfer are caused by contamination, tearing, and chemical doping. For the commercialization of 2D materials, a damage-free, large-area, and productive transfer process is needed. However, a transfer process that meets all three requirements has yet to be developed. In this paper, we review the recent progress in the development of transfer processes for 2D materials, and discuss the principles, advantages, and limitations of each process. The future prospects of transfer processes are also discussed. To simplify the discussion, the transfer processes are classified into four categories: wet transfer, dry transfer, mechanical transfer, and electro-chemical transfer. Finally, the "roll-to-roll" and "roll-to-plate" dry transfer process is proposed as the most promising method for the commercialization of 2D materials. Moreover, for successful dry transfer of 2D materials, it is necessary to clearly understand the adhesion properties, viscoelastic behaviors, and mechanical deformation of the transfer film used as a medium in the transfer process.

Combinational flexible OLED display device using piezoelectric polymer PVDF (압전폴리머 PVDF를 이용한 복합형 유연 OLED 디스플레이 소자)

  • Le, Sang-Yub;Bea, Byung-Tack;Park, Dong-Hee;Choi, Ji-Won;Choi, Won-Kook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.55-55
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    • 2008
  • 압전폴리머 PVDF(polyvinylidene difluoride)의 기판소재를 기반으로 한 디스플레이 소자를 연구하였다. 압전 폴리머 PVDF의 양면은 두께 300nm정도의 ITO(Indium Tin Oxide)를 TCO(Transparent conducting oxide)로 R2R(roll to roll)증착하였으며, 이를 적외선 계열 Pulsed Laser로 상온 건식 에칭을 통해 패턴해내고, 이후 고진공 환경에서 Alq3 를 기반의 유기발광소자를 제작하였다. 전기적 신호에 대해서 기계적인 작동이 가능한 투명 압전 폴리머 재료를 디스플레이 발광소자의 기판 소재로 사용함으로써, 궁극적으로 발광기능과 더불어 압전효과에 의한 스피커 기능이 한 개의 개체내에서 독립적으로 구현될 수 있도록 설계하고, 기술적으로 실현시켰다는 점이 본 연구의 의의라고 할 수 있다. 이를 위해서, 섭씨 80도 이상의 온도에서 압전 성질을 상실하는 것으로 알려진 PVDF에 대해서 투명산화전극을 레이져를 이용한 비가열식 승화방법을 통해 패턴화하는 것을 사용했으며, 밀리미터 단위에서 수십 마이크로미터 수준까지 패턴화할 수 있었다. 제작된 복합형 유연 OLED소자는 기계적으로 휘어진 상태에서도 발광 성능과 스피커 성능을 각각 독립적으로 보였으며, Alq3에 의한 녹색발광을 보임을 확인하였고, 이 경우 양자효율은 약 3%이하의 값을 보였다. 또한 각주파수별 음압(SPL: Sound Pressure Level)측정 결과는 압번폴리머가 가청주파수 영역에서 작동함을 보였으며, 고주파영역에서의 SPL값이 증가하는 전형적인 PVDF사용 필름 스피커의 특성을 보였다. 이로부터 제작된 복합형 소자는 본 연구에서 제안된 목적에서 보인 것과 같이, 두 개의 기능이 서로간의 간섭없이 독립적으로 한 개의 개체 내에서 작동함을 확인할 수 있었다. 본 연구 결과로부터 새로운 유연 전자 소자에 대한 디자인 개념을 제시하고, 기타 다른 기능이 접합된 형태의 신개념 전자 소자를 제안하는 것도 가능할 것으로 기대된다.

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Flame Resistance Performance of Glass Fiber and Polyester Fiber Architectural Membranes (건축용 유리섬유 및 폴리에스테르섬유 막재의 난연특성)

  • Kim, JiHyeon;Song, Hun
    • Fire Science and Engineering
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    • v.30 no.1
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    • pp.17-23
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    • 2016
  • Membrane structures can be used to create diverse lightweight structural forms using ductile membranes made of coated fabric. Using membrane structures, it is possible to construct large covered spaces relatively quickly and economically, and hence, they are being applied within various applications. The structures are light-weight, transparent, flexible in their application, economical and easy to maintain, and as such, their usage is being expanded. However, despite their prevalence, the standard for membrane material performance in terms of fire safety is still inadequate, and the development of membrane materials with excellent flame resistance performance is being demanded. This study determined flame resistance performance of architectural membranes, including PTFE, PVDF, PVF and ETFE film membranes, through flammability testing and incombustibility testing.

Characteristics of amorphous indium tin oxide films on PET substrate grown by Roll-to-Roll sputtering system (저온 Roll-to-Roll 스퍼터 시스템을 이용하여 PET 기판위에 성막 시킨 ITO 박막의 전기적, 광학적, 구조적 특성)

  • Cho, Sung-Woo;Bae, Jung-Hyeok;Choi, Kwang-Hyuk;Moon, Jong-Min;Jeong, Jin-A;Jeong, Soon-Wook;Kim, Han-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.380-381
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    • 2007
  • This paper reports on the deposition conditions and properties of ITO films used as electrode layer in a organic light emitting diodes on a PET substrate. The deposition technique employed was specially designed roll-to-roll sputtering. The oxide was deposited at room temperature in an argon and oxygen plasma on a transparent conducting ITO layer on a PET film. The influence of deposition parameters such as DC power, working pressure and oxygen partial pressure has been investigated, in order to obtain the best compromise between a high deposition rate and adequate electro-optical properties. Electrical and optical properties of ITO films were analyzed by Hall measurement examinations with van der pauw geometry at room temperature and UV/Vis spectrometer analysis, respectively. In addition, the structural properties and surface smoothness were measured by x-ray diffraction and scaning electron microscopy, respectively. From optimized ITO films grown by roll-to-roll sputter system, good electrical$(6.44{\times}10^{-4}\;{\Omega}-cm)$ and optical(above 86 % at 550 nm) properties were obtained. Also, the ITO films exhibited amorphous structure and very flat surface beacause of low deposition temperature.

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Fabrication of Flexible Graphene Transparent Conducting Film by Self-Assembled Monolayers on Polyethylene Terephthalate

  • Go, Yong-Hun;Jeong, Dae-Seong;Jo, Ju-Mi;Adhikari, Prashanta Dhoj;Cha, Myeong-Jun;Jeon, Seung-Han;Jeong, U-Seong;Park, Jong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.282-282
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    • 2013
  • 그래핀(Graphene)은 열 전도도가 높고 전자 이동도(200 000 cm2V-1s-1)가 우수한 전기적 특성을 가지고 있어 차세대 전자재료로써 유망한 후보로 간주되어 왔다. 최근에는 아크 방출(Arc discharge method), 화학적 기상 증착법(Chemical vapor deposition; CVD), 이온-조사법(Ion-irradiation) 등을 이용한 이종원자(Hetero atom)도핑과 화학적 처리를 이용한 기능화(Functionalization)등의 방법으로 그래핀의 전도도를 향상시킬 수 있었다. 그러나 이러한 방법들은 기판의 표면을 거칠게 하며, 그래핀에 많은 결함들이 발생한다는 단점이 있다. 이러한 단점을 극복하기 위해 자가 조립 단층막법(Self-Assembled Monolayers; SAMs)을 이용하여 기판을 기능화한 후 그 위에 그래핀을 전사하면, 자가 조립 단층막의 기능기에 따라 그래핀의 일함수를 조절 가능하고 운반자 농도나 도핑 유형을 변화시켜 소자의 전기적 특성을 최적화 할 수 있다 [1-3]. 본 연구에서는 PET(polyethylene terephthalate) 기판에 SAMs를 이용하여 유연하고 투명한 그래핀 전극을 제작하였다. 자외선 오존처리 (UV ozone treatment)를 이용하여 PET 기판 표면 위에 하이드록실 기(Hydroxyl group; -OH)를 기능화 화였고 이를 접촉각 측정(Contact angle measurement)을 통해 확인하였다. 또한 3-Aminopropyltriethoxysilane(APTES)와 톨루엔 (toluene)을 이용하여 PET 기판 표면 위의 하이드록실 기 위에 아민 기(Amine group; -NH2)를 기능화 하였고 이를 X-선 광전자 분광법(X-ray photoelectron spectroscopy: XPS)으로 분석하였다. 이렇게 만들어진 PET기판 표면 위에 화학적 기상 증착법을 이용하여 합성한 대면적의 균일한 그래핀을 전사하였다. NH2그룹에 의해 그래핀에 도핑 효과가 나타난 것을 라만 분광법(Raman spectroscopy)과 전류-전압 특성곡선(I-V characteristic curve)을 이용하여 확인하였다. 본 연구 결과는 유연하고 투명한 기판 위에 안정적이면서 패턴이 가능하기 때문에 그래핀을 기반으로 하는 반도체 소자에 적용 가능할 것이라 예상된다.

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Characteristics of Large Area ITO/PET Fabricated by Vacuum Web Coater (진공 웹코터로 제작된 대면적 ITO/PET의 특성 연구)

  • Kim, Ji-Hwan;Park, Dong-Hee;Kim, Jong-Bin;Byun, Dong-Jin;Choi, Won-Kook
    • Korean Journal of Materials Research
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    • v.17 no.10
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    • pp.516-520
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    • 2007
  • Indium tin oxide, which is used as transparent conducting layer in flexible device, is deposited on PET film by a magnetron sputtering in 300 mm wide roll-to-roll process (vacuum web coating). Sheet resistance, specific resistance and transmittance is differed by sputtering parameters such as working pressures, oxygen partial pressure, and thickness of ITO layer. ITO layer is deposited about 90 nm at roll speed of 0.24 m/min and its sputtering power is 3 kW. From the XRD spectrum deposited ITO layer is verified as amorphous. Under working pressure varied from $3{\times}10^{-4}\;Torr$ to $2{\times}10^{-3}\;Torr$, sheet resistance is lowest at the working pressure of $1{\times}10^{-3}\;Torr$ and its value is from $110\;{\Omega}/{\square}$ to $260\;{\Omega}/{\square}$ at the thickness of 90 nm. Oxygen partial pressure also varies sheet resistance and is optimized at the regime from 0.2% ($1.8{\times}10^{-6}\;Torr$) to 0.6% ($6{\times}10^{-6}\;Torr$). In this oxygen partial pressure sheet resistance is lower than $150\;{\Omega}/{\square}$. As ITO layer thickness increases, sheet resistance decreases down to $21\;{\Omega}/{\square}$ and specific resistance is about $7.5{\times}10.4{\Omega}cm$ in 340 nm thickness ITO layer. Transmittance is measured at the wavelength of 550 nm and is about 90% for 180 nm thickness ITO/PET.

A Study of Accuracy and Usability for Acupuncture Points Locating Devices (경혈정위 보조도구의 정확성 및 편의성 평가 연구)

  • Chae, Youn-Byoung;Kang, O-Seok;Hahm, Dae-Hyun;Lee, Seung-Ho;Kim, Jai-Soon;Kim, Kwan-Hyung;Kim, Hee-Young;Lee, Hye-Jung;Park, Hi-Joon
    • Korean Journal of Acupuncture
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    • v.24 no.2
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    • pp.61-76
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    • 2007
  • Objectives : Accurate and reproducible location of an acupuncture point (AP) have been considered an essential component of meaningful acupuncture research as well as clinical practice. Several kinds of devices have been developed and widely used for the convenience of locating APs. However, the accuracy and convenience of these devices have not been systematically evaluated. The present study was performed to find out the most suitable tools for the location accuracy and location easiness of APs among the devices respectively. Methods : Twenty subjects attempted to locate APs, including PC5 and SP6 in the arm and leg, using four different AP positioning methods: one Conventional Ruler method and three alternative methods including Cunometer, Transparent AP meter, and Elastic Ruler method. The position marked on each AP was plotted onto a thin, flexible, and transparent plastic film, and the dispersion rate of the positions was determined and recorded. The elapsed time for locating each AP was measured. After that each subject was answered to a short questionnaire regarding the degree of convenience and confidence of use of each method for AP location. Results : All of three alternative methods took less time than Conventional Ruler method did. Among these alternative methods, the accuracy of Elastic Ruler method was markedly higher than others. The degree of convenience of the Cunometer and the confidence of Elastic Ruler method were the highest among these alternative methods. Conclusions : The present study indicates that the Elastic Ruler method was the most compatible for the conventional Ruler methods. However, there are many factors need to be reconsidered. Improved devices for locating AP are imperatively needed for clinical practice.

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Effect of the Cu Bottom Layer on the Optical and Electrical Properties of In2O3/Cu Thin Films (구리 기저 층이 In2O3/Cu 박막의 광학적, 전기적 특성에 미치는 영향)

  • Kim, Dae-Il
    • Journal of the Korean Vacuum Society
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    • v.20 no.5
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    • pp.356-360
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    • 2011
  • Indium oxide ($In_2O_3$) single layer and $In_2O_3$/copper (Cu) bi-layer films were prepared on glass substrates by RF and DC magnetron sputtering without intentional substrate heating. In order to determine the effect of the Cu bottom layer on the optical, electrical and structural properties of $In_2O_3$ films, 3-nm-thick Cu film was deposited on the glass substrate prior to deposition of the $In_2O_3$ films. As-deposited $In_2O_3$ films had an optical transmittance of 79% in the visible wavelength region and a sheet resistance of 2,300 ${\Omega}/{\square}$, while the $In_2O_3$/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. $In_2O_3$/Cu films had a lower sheet resistance of 110 ${\Omega}/{\square}$ and an optical transmittance of 71%. Based on the figure of merit, it can be concluded that the Cu bottom layer effectively increases the performance of $In_2O_3$ films for use as transparent conducting oxides in flexible display applications.

The improvement of electrical properties of InGaZnO (IGZO)4(IGZO) TFT by treating post-annealing process in different temperatures.

  • Kim, Soon-Jae;Lee, Hoo-Jeong;Yoo, Hee-Jun;Park, Gum-Hee;Kim, Tae-Wook;Roh, Yong-Han
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.169-169
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    • 2010
  • As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

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Reaction Gas Composition Dependence on the Properties of SnO2 Films on PET Substrate by ECR-MOCVD (반응가스조성이 PET기판위에 ECR 화학증착법에 의해 제조된 SnO2 박막특성에 미치는 영향)

  • Kim, Yun-Seok;Lee, Joong-Kee
    • Journal of the Korean Electrochemical Society
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    • v.8 no.3
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    • pp.139-145
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    • 2005
  • [ $SnO_x$ ] films on the flexible substrate of PET film were prepared at ambient temperature under a $(CH_3)_4Sn(TMT: tetra-methyl tin)-H_2-O_2$ atmosphere in order to obtain transparent conductive polymer by using ECR-MOCVD(Electro Cyclotron Resonance Metal Organic Chemical Yfpor Deposition) system. The prepared $SnO_x$ thin films show generally over $90\%$ of optical transmittance at wavelength range of 380-780nm and about $1\times10^{-2\~3}ohm{\cdot}cm$ of electrical resistivity. In the present study, effects of $O_2/TMT\;and\;H_2/TMT$ mole ratio on the properties of $SnO_x$ films are investigated and the other process parameters such as microwave power, magnetic current power, substrate distance and working pressure are fixed. Based on our experimental results, the $SnO_x$ film composition ratio of Sn and O directly influences on the electrical and optical properties of the films prepared. The $SnO_x$ film with low electric resistivity and high transmittance could be obtained by controlling the process parameters such as $O_2/TMT\;and\;H_2/TMT$ mole ratio, which play an important role to change the composition ratio between Sn and O. An increase of $O_2/TMT$ mole ratio brought on the increases 0 content in the $SnO_x$ film. On the other hand, an increase of $H_2/TMT$ mole ratio lead to decreases the oxygen content in the film. The optimized composition ratio of oxygen : tin Is determined as 2.4: 1 at $O_2/TMT$ of 80 and $H_2/TMT$ of 40 mole ratio, respectively.