• Title/Summary/Keyword: flexible substrates

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Electrochemical Properties of Platinized Counter Electrode on based Stainless Steel Sheet for Dye-Sensitized Solar Cells (SUS 기판을 이용한 염료감응형 태양전지용 백금 상대전극의 전기화학적 특성)

  • Park, Kyung-Hee;Kim, Tae-Young;Back, Hyung-Ryul;Gu, Hal-Bon;Kim, Seung-Jai;Cho, Sung-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.262-263
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    • 2005
  • Pt counter electrode based on flexible metal for dye-sensitized solar cells(DSCs) has been investigated. Photovoltaic structures on lightweight substrates have several advantages over the heavy glass-based structures in both terrestrial and space applications. Cyclic voltammetry and impedance spectroscopy were used to investigate electrochemical properties of Pt counter electrode both FTO glass and SUS sheet substrate. The DSCs composed of the counter electrode based on a stainless steel substrate has obtained conversion efficiencies comparable to that based on the conducting glass. The counter electrode based on the stainless steel substrate has the merit of improving the fill factor and conversion efficiency of the DSCs by reducing its internal resistance.

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Vibration Analysis of the Large Substrate Handling Robot (8.5G 솔라셀 평판 핸들링 로봇의 진동 제어)

  • Park, Dong Il;Park, Cheolhoon;Park, Chanhun;Kim, Doohyung
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.25 no.6
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    • pp.498-503
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    • 2016
  • Many types of robot systems are used in the mass production line of thin film solar cells and flat panel displays. There are some issues such as the deflection and the vibration of the end-effector because robots handle large and heavy substrates at high speed. Heavy payload and high speed cause much vibration because the end-effector (fork) is made of carbon fiber reinforced polymer because of its light weightiness and sufficient stiffness. This study performs a dynamic simulation of an 8.5G solar cell substrate handling robot, including rigid and flexible bodies and a vibration controller. The fifth polynomial trajectory and the zero vibration derivative input shaping algorithm are applied. The vibration reduction is also proved in the experiments.

AEM on Growth Mechanism of Synthesized Graphene on Ni Catalyst

  • Park, Min-Ho;Lee, Jae-Uk;Bae, Ji-Hwan;Song, Gwan-U;Kim, Tae-Hun;Yang, Cheol-Ung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.579-579
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    • 2012
  • Graphene has recently been a subject of much interest as a potential platform for future nanodevices such as flexible thin-film transistors, touch panels, and solar cells. And chemical vapor deposition (CVD) and related surface segregation techniques are a potentially scalable approach to synthesizing graphite films on a variety of metal substrates. The structural properties of such films have been studied by a number of methods, including Raman scattering, x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and transmission electron microscopy (TEM). An understanding of the structural quality and thickness of the graphite films is of paramount importance both in improving growth procedures and understanding the resulting films' electronic properties. In this study, we synthesized the few-layered grapheneunder optimized condition to figure out the growth mechanism seen in CVD-grown graphenee by using various electron microscope. Especially, we observed directly film thickness, quality, nucleation site, and uniformity of grpahene by using AEM. The details will be discussed in my presentation.

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EO Performances of Flexible TN-LCD using in-situ Ultraviolet Exposure during Imidization of Polyimide on the Polymer Film

  • Moon, Hyun-Chan;Hwang, Jeoung-Yeon;Lee, Whee-Won;Seo, Dae-Shik
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.3
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    • pp.106-109
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    • 2005
  • We have investigated the generation of pretilt angle for a nematic liquid crystal (NLC) alignment with in-situ photoalignment method on polyimide (PI) surfaces using polymer films. Especially, we studied in-situ photoalignment changing heating temperature from $50^{\circ}C\;to\;120^{\circ}C$ on the polymer film. The LC aligning capabilities and pretilt angle on the polymer substrates were better than those on the glass substrate using in-situ photoalignment method. It is considered that this increase in pretilt angle may be attributed to the roughness of the micro-groove substrate induced by the in-situ photoalignment. As temperature of heated subtrate and UV exposure time increase, pretilt angle of the cell used polymer film increased. It is considered that the heating temperature of substrate is attributed to generate pretilt angle. Also, electro-optical performances of the in-situ photoaligned TN cell using the polymer substrate are almost the same as that of the TN cell using the glass substrate.

Technology Development Trends of Self-Powered Next Generation Smart Windows (PV 일체형 차세대 스마트 윈도우 기술개발 동향)

  • Pyun, Sun Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.12
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    • pp.753-764
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    • 2015
  • Among several types of energy saving smart window technologies, the leader, the dynamic EC (electrochromic) window one needs integrated PV (photovoltaics), to minimize expensive electrical wiring as well as to obviate the need for external energy. Self-powered smart windows were reviewed according to PV types used. DSSCs (dye sensitized solar cells) were found to be compatible with EC cells, to have several categories of next generation smart windows such as PECCs (photoelectrochromic cells), PVCCs (photovoltachromic cells), EC polymer PECCs. In addition silicon solar cells and third generation solar cells were investigated. They are summarized in a table showing their advantages and disadvantages respectively for a fast comparison. The strategy to expedite the commercialization of these next generation smart windows includes developing retrofit smart window coverings for use on flexible polymer substrates adhered to the inside surface of a window and easily replaced after use for upto 10 years.

Synthesis of Single-Walled Carbon Nanotubes for Enhancement of Horizontal-Alignment and Density (단일벽 탄소나노튜브의 수평배향도 및 밀도 향상 합성)

  • Kwak, Eun-Hye;Im, Ho-Bin;Jeong, Goo-Hwan
    • Journal of Surface Science and Engineering
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    • v.47 no.6
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    • pp.347-353
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    • 2014
  • We present a synthesis of single-walled carbon nanotubes(SWNTs) for enhancement of parallel-alignment and density using chemical vapor deposition with methane feed gas. As-purchased ST-cut quartz substrates were heat-treated and line-patterned by electron-beam lithography in order to grow SWNTs with parallel alignment. We investigated the effects of various synthesis parameters such as catalyst oxidation, reduction, and synthesis conditions in order to enhance both tube density and degree of parallel alignment. The condition of $1{\AA}$ of Fe catalyst film, atmospheric oxidation at $750^{\circ}C$ for 10 min, reduction under 400 Torr for 5 min, and growth at $865^{\circ}C$ under 300 Torr yields $33tubes/10{\mu}m$, which is the highest tube density with parallel alignment. Based on the results of atomic force microscope and Raman spectroscopy, it was found that SWNTs have diameter range of 0.8-2.0 nm. We believe that the present work would contribute to the development of SWNTs-based flexible functional devices.

Crystallized Nano-thick TiO2 Films with Low Temperature ALD Process (저온 원자층증착법으로 제조된 결정질 TiO2 나노 박막)

  • Park, Jongsung;Han, Jeungjo;Song, Ohsung
    • Korean Journal of Metals and Materials
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    • v.48 no.5
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    • pp.449-455
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    • 2010
  • To enhance the efficiency of dye sensitized solar cells, we proposed crystalline anatase-$TiO_{2}$ by using a low temperature process ($150^{\circ}C{\sim}250^{\circ}C$). We successfully fabricated 30 nm-$TiO_{2}$ at a fixed atomic layer deposition condition of 1.0 sec of TDMAT pulse, 20 sec of TDMAT purge, 0.5 sec of H$_{2}$O pulse, and 20 sec of H$_{2}$O purge. In order to examine the microstructure, phase, and band-gap of the TiO$_{2}$ respectively, we employed a Nano-Spec, transmission electron microscope, high resolution XRD, Auger electron spectroscopy, scanning probe microscope, and UV-VIS-NIR. We were able to fabricate a crystalline anatase-phase of 30 nm-TiO$_{2}$ successfully at temperatures above $180^{\circ}C$. Our results showed that our proposed low temperature ALD process (below $200^{\circ}C$) might be applicable to glass and flexible polymer substrates.

A Study on the Selection of Highly Flexible Blanket for Reverse Offset Printing (Reverse Offset Printing용 고신축성 Blanket 재료 선정에 관한 연구)

  • Shin, Seunghang;Kim, Seok;Cho, Young Tae
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.20 no.5
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    • pp.121-127
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    • 2021
  • Reverse offset printing is considering as an emerging technology for printed electronics owing to its environmentally friendliness and cost-effectiveness. In reverse offset printing, selecting the materials for cliché and blanket is critical because of its minimum resolution, registration errors, aspect ratio of reliefs, pattern area, and reusability. Various materials such as silicon, quartz, glass, electroplated nickel plates, and imprinted polymers on rigid substrates can be used for the reverse offset printing of cliché. However, when new structures are designed for specific applications, new clichés need to re-fabricated each time employing multiple time-consuming and costly processes. Therefore, by modifying the blanket materials containing the printing ink, several new structures can be easily created using the same cliché. In this study, we investigated various elastomeric materials and evaluated their applicability for designing a highly stretchable blanket with controlled elastic deformation to implement tunable reverse offset printing.

Characteristics of amorphous IZTO-based transparent thin film transistors (비정질 IZTO기반의 투명 박막 트렌지스터 특성)

  • Shin, Han-Jae;Lee, Keun-Young;Han, Dong-Cheul;Lee, Do-Kyung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.151-151
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    • 2009
  • Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.

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Flexible InGaP/GaAs Double-Junction Solar Cells Transferred onto Thin Metal Film (InGaP/GaAs 이중접합 기반의 고효율 플렉시블 태양전지 제조기술 연구)

  • Moon, Seungpil;Kim, Youngjo;Kim, Kangho;Kim, Chang Zoo;Jung, Sang Hyun;Shin, Hyun-Beom;Park, Kyung Ho;Park, Won-Kyu;Ahn, Yeon-Shik;Kang, Ho Kwan
    • Current Photovoltaic Research
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    • v.4 no.3
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    • pp.108-113
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    • 2016
  • III-V compound semiconductor based thin film solar cells promise relatively higher power conversion efficiencies and better device reliability. In general, the thin film III-V solar cells are fabricated by an epitaxial lift-off process, which requires an $Al_xGa_{1-x}As$ ($x{\geq}0.8$) sacrificial layer and an inverted solar cell structure. However, the device performance of the inversely grown solar cell could be degraded due to the different internal diffusion conditions. In this study, InGaP/GaAs double-junction solar cells are inversely grown by MOCVD on GaAs (100) substrates. The thickness of the GaAs base layer is reduced to minimize the thermal budget during the growth. A wide band gap p-AlGaAs/n-InGaP tunnel junction structure is employed to connect the two subcells with minimal electrical loss. The solar cell structures are transferred on to thin metal films formed by Au electroplating. An AlAs layer with a thickness of 20 nm is used as a sacrificial layer, which is removed by a HF:Acetone (1:1) solution during the epitaxial lift-off process. As a result, the flexible InGaP/GaAs solar cell was fabricated successfully with an efficiency of 27.79% under AM1.5G illumination. The efficiency was kept at almost the same value after bending tests of 1,000 cycles with a radius of curvature of 10 mm.