• Proceedings of the KIPE Conference
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• 2002.07a
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• pp.635-638
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• 2002

In this paper, the connection device of RS232C and TCP/IP implementation using ARM processor and LINUX is proposed. Data interaction flash memory the multiple serial ports are transferred to ARM processor and the data are processed and formed into data packet for transfer via internet protocol. Packet flash memory Internet is decoded to extract the serial port data. The serial ports supports RS232C asynchronous protocol communication and control program is developed in GNU-C and installed in the on-board memory for packet conversion and control. The research result can be applied to terminal server, printer server and multiple serial ports equipments.

• Journal of Internet of Things and Convergence
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• v.8 no.4
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• pp.9-15
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• 2022

NAND flash memory is used as a medium for various storage devices due to its high data processing speed with low power consumption. However, since the read processing speed of data is about 10 times faster than the write processing speed, various studies are being conducted to improve the speed difference. In particular, flash dedicated buffer management policies have been studied to improve write speed. However, SSD(solid state disks), which has recently been used for various purposes, is more vulnerable to read performance than write performance. In this paper, we find out why read performance is slower than write performance in SSD composed of NAND flash memory and study buffer management policies to improve it. The buffer management policy proposed in this paper proposes a method of improving the speed of a flash-based storage device by analyzing the pattern of read data and applying a policy of pre-reading data to be requested in the future from NAND flash memory. It also proves the effectiveness of the read-ahead policy through simulation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.11-20
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• 2008

The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

• Journal of KIISE:Computing Practices and Letters
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• v.13 no.4
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• pp.213-225
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• 2007

Flash memory is widely used as a storage device for potable equipments such as digital cameras, MP3 players and cellular phones because of its characteristics such as its large volume and nonvolatile feature, low power consumption, and good performance. However, a block in flash memories should be erased to write because of its hardware characteristic which is called as erase-before-write architecture. The erase operation is much slower than read or write operations. FTL is used to overcome this problem. We compared the performance of the existing FTL algorithms on Windows-based OS. We have developed a tool called FTL APAT in order to gather I/O patterns of the disk and analyze the performance of the FTL algorithms. It is the log buffer scheme with full associative sector translation(FAST) that the performance is best.

• Journal of KIISE:Computer Systems and Theory
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• v.36 no.6
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• pp.543-556
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• 2009

Recently, NAND flash memory is being used as the swap device of virtual memory as well as the file storage of mobile systems. Since temporal locality is dominant in page references of virtual memory, LRU and its approximated CLOCK algorithms are widely used. However, cost of a write operation in flash memory is much larger than that of a read operation, and thus a page replacement algorithm should consider this factor. This paper analyzes virtual memory read/write reference patterns individually, and observes the ranking inversion problem of temporal locality in write references which is not observed in read references. With this observation, we present a new page replacement algorithm considering write frequency as well as temporal locality in estimating write reference behaviors. This new algorithm dynamically allocates memory space to read/write operations based on their reference patterns and I/O costs. Though the algorithm has no external parameter to tune, it supports optimized implementations for virtual memory systems, and also performs 20-66% better than CLOCK, CAR, and CFLRU algorithms.

• Proceedings of the Korean Information Science Society Conference
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• 2001.04a
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• pp.115-117
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• 2001

대부분의 embedded system에서 hard-disk 대용으로 flash memory를 사용하고 있으며, flash device에 압축 커널이미지와 root file system image를 가지고 있다. Booting 고정 중 커널의 압축이 풀리고 메모리에 로드되어 제어를 넘겨받으면 flash memory 상에 존재하는 root file system image를 ramdisk의 image로 로드하여 시스템은 결국 ramdisk에 root file system을 가지게 된다. Ramdisk 상의 프로그램을 실행하기 위해 메모리로 실행파일 이미지를 copy하는 과정을 피하고 ramdisk 상의 이미지를 바로 프로세스의 virtual memory area에 직접 매핑 시켜 주는 XIP(eXection-In-Place)를 구현함으로써 많은 메모리 절감 효과를 얻을 수 있다. 본 연구에서는 ramdisk를 root file system으로 사용하는 embedded system에서의 XIP 구조를 설계하고 구현하였다.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.82-86
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• 2019

The reliability of 3D NAND flash memory cell is affected by the charge migration which can be divided into the vertical migration and the lateral migration. To clarify the difference of two migrations, the activation energy of the charge loss is extracted and compared in a conventional square device pattern and a new test pattern where the perimeter of the gate is exaggerated but the area is same. The charge loss is larger in the suggested test pattern and the activation energy is extracted to be 0.058 eV while the activation energy is 0.28 eV in the square pattern.

• Journal of KIISE:Computing Practices and Letters
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• v.13 no.5
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• pp.333-337
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• 2007

Flash Translation Layer(FTL) which enables NAND Flash memory-based storage system to be used as a block device is designed considering only characteristics of NAND Flash memory. However, since FTL precesses I/O requests which survived against buffer replacement algorithm, FTL algorithm has tight relationship with buffer replacement algorithm. Therefore, if we do not consider both FTL and buffer replacement algorithms, it is difficult to predict the actual I/O performance of the computer systems that have Flash memory-based storage system. The necessity of FTL and buffer replacement algorithm co-design arises here. In this work, we implemented I/O performance evaluation tool, IPSiNS, which simulates both the buffer replacement and FTL algorithms, simultaneously.

• Journal of Information Processing Systems
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• v.17 no.1
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• pp.191-202
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• 2021

In an Internet of Things (IoT)-configured system, each device executes on-chip software. Recent IoT devices require fast execution time of complex services, such as analyzing a large amount of data, while maintaining low-power computation. As service complexity increases, the service requires high-performance computing and more space for embedded space. However, the low performance of IoT edge devices and their small memory size can hinder the complex and diverse operations of IoT services. In this paper, we propose a remote on-demand software code execution unit using the cloudification of on-chip code memory to accelerate the program execution of an IoT edge device with a low-performance processor. We propose a simulation approach to distribute remote code executed on the server side and on the edge side according to the program's computational and communicational needs. Our on-demand remote code execution unit simulation platform, which includes an instruction set simulator based on 16-bit ARM Thumb instruction set architecture, successfully emulates the architectural behavior of on-chip flash memory, enabling embedded devices to accelerate and execute software using remote execution code in the IoT environment.

• Journal of KIISE:Computing Practices and Letters
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• v.14 no.4
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• pp.378-388
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• 2008

Flash memory has been attracting attention as the next mass storage media for mobile computing systems such as notebook computers and UMPC(Ultra Mobile PC)s due to its low power consumption, high shock and vibration resistance, and small size. A storage system with flash memory excels in random read, sequential read, and sequential write. However, it comes short in random write because of flash memory's physical inability to overwrite data, unless first erased. To overcome this shortcoming, we propose an SSD(Solid State Disk) architecture with two novel features. First, we utilize non-volatile FRAM(Ferroelectric RAM) in conjunction with NAND flash memory, and produce a synergy of FRAM's fast access speed and ability to overwrite, and NAND flash memory's low and affordable price. Second, the architecture categorizes host write requests into small random writes and large sequential writes, and processes them with two different buffer management, optimized for each type of write request. This scheme has been implemented into an SSD prototype and evaluated with a standard PC environment benchmark. The result reveals that our architecture outperforms conventional HDD and other commercial SSDs by more than three times in the throughput for random access workloads.