• Title/Summary/Keyword: flash memory

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An Efficient Index Buffer Management Scheme for a B+ tree on Flash Memory (플래시 메모리상에 B+트리를 위한 효율적인 색인 버퍼 관리 정책)

  • Lee, Hyun-Seob;Joo, Young-Do;Lee, Dong-Ho
    • The KIPS Transactions:PartD
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    • v.14D no.7
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    • pp.719-726
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    • 2007
  • Recently, NAND flash memory has been used for a storage device in various mobile computing devices such as MP3 players, mobile phones and laptops because of its shock-resistant, low-power consumption, and none-volatile properties. However, due to the very distinct characteristics of flash memory, disk based systems and applications may result in severe performance degradation when directly adopting them on flash memory storage systems. Especially, when a B-tree is constructed, intensive overwrite operations may be caused by record inserting, deleting, and its reorganizing, This could result in severe performance degradation on NAND flash memory. In this paper, we propose an efficient buffer management scheme, called IBSF, which eliminates redundant index units in the index buffer and then delays the time that the index buffer is filled up. Consequently, IBSF significantly reduces the number of write operations to a flash memory when constructing a B-tree. We also show that IBSF yields a better performance on a flash memory by comparing it to the related technique called BFTL through various experiments.

An Optimized File System for SSD (SSD를 위한 최적화 파일시스템)

  • Park, Je-Ho
    • Journal of the Semiconductor & Display Technology
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    • v.9 no.2
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    • pp.67-72
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    • 2010
  • Recently increasing application of flash memory in mobile and ubiquitous related devices is due to its non-volatility, fast response time, shock resistance and low power consumption. Following this trend, SSD(Solid State Disk) using multiple flash chips, instead of hard-drive based storage system, started to widely used for its advantageous features. However, flash memory based storage subsystem should resolve the performance bottleneck for writing in perspective of speed and lifetime according to its disadvantageous physical property. In order to provide tangible performance, solutions are studied in aspect of reclaiming of invalid regions by decreasing the number of erasures and distributing the erasures uniformly over the whole memory space as much as possible. In this paper, we study flash memory recycling algorithms with multiple management units and demonstrate that the proposed algorithm provides feasible performance. The proposed method utilizes the partitions of the memory space by utilizing threshold values and reconfigures the management units if necessary. The performance of the proposed policies is evaluated through a number of simulation based experiments.

Performance Improvement of Asynchronous Mass Memory Module Using Error Correction Code (에러 보정 코드를 이용한 비동기용 대용량 메모리 모듈의 성능 향상)

  • Ahn, Jae Hyun;Yang, Oh;Yeon, Jun Sang
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.3
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    • pp.112-117
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    • 2020
  • NAND flash memory is a non-volatile memory that retains stored data even without power supply. Internal memory used as a data storage device and solid-state drive (SSD) is used in portable devices such as smartphones and digital cameras. However, NAND flash memory carries the risk of electric shock, which can cause errors during read/write operations, so use error correction codes to ensure reliability. It efficiently recovers bad block information, which is a defect in NAND flash memory. BBT (Bad Block Table) is configured to manage data to increase stability, and as a result of experimenting with the error correction code algorithm, the bit error rate per page unit of 4Mbytes memory was on average 0ppm, and 100ppm without error correction code. Through the error correction code algorithm, data stability and reliability can be improved.

CPWL : Clock and Page Weight based Disk Buffer Management Policy for Flash Memory Systems

  • Kang, Byung Kook;Kwak, Jong Wook
    • Journal of the Korea Society of Computer and Information
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    • v.25 no.2
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    • pp.21-29
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    • 2020
  • The use of NAND flash memory is continuously increased with the demand of mobile data in the IT industry environment. However, the erase operations in flash memory require longer latency and higher power consumption, resulting in the limited lifetime for each cell. Therefore, frequent write/erase operations reduce the performance and the lifetime of the flash memory. In order to solve this problem, management techniques for improving the performance of flash based storage by reducing write and erase operations of flash memory with using disk buffers have been studied. In this paper, we propose a CPWL to minimized the number of write operations. It is a disk buffer management that separates read and write pages according to the characteristics of the buffer memory access patterns. This technique increases the lifespan of the flash memory and decreases an energy consumption by reducing the number of writes by arranging pages according to the characteristics of buffer memory access mode of requested pages.

Design of a NAND Flash Memory File System to Improve System Boot Time

  • Park, Song-Hwa;Lee, Tae-Hoon;Chung, Ki-Dong
    • Journal of Information Processing Systems
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    • v.2 no.3 s.4
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    • pp.147-152
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    • 2006
  • NAND flash memory-based embedded systems are becoming increasingly common. These embedded systems have to provide a fast boot time. In this paper, we have designed and proposed a flash file system for embedded systems that require fast booting. By using a Flash Image Area, which keeps the latest flash memory information such as types and status of all blocks, the file system mounting time can be reduced significantly. We have shown by experiments that our file system outperforms YAFFS and RFFS.

Design of NAND Flash Translation Layer Based on Valid Page Lookup Table (유효 페이지 색인 테이블을 활용한 NAND Flash Translation Layer 설계)

  • 신정환;이인환
    • Proceedings of the IEEK Conference
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    • 2003.11b
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    • pp.15-18
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    • 2003
  • Flash memory becomes more important for its fast access speed, low-power, shock resistance and nonvolatile storage. But its native restrictions that have limited 1ifetime, inability of update in place, different size unit of read/write and erase operations need to managed by FTL(Flash Translation Layer). FTL has to control the wear-leveling, address mapping, bad block management of flash memory. In this paper, we focuses on the fast access to address mapping table and proposed the way of faster valid page search in the flash memory using the VPLT(Valid Page Lookup Table). This method is expected to decrease the frequency of access of flash memory that have an significant effect on performance of read and block-transfer operations. For the validations, we implemented the FTL based on Windows CE platform and obtained an improved result.

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A Clustered Flash Translation Layer for Mobile Storage Systems (휴대용 저장장치 시스템을 위한 Clustered Flash Translation Layer)

  • Park, Kwang-Hee;Kim, Deok-Hwan
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.3
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    • pp.94-100
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    • 2008
  • It is necessary to develop the flash memory system software FTL(Flash Translation Layer) which is used in mobile storage like Compact Flash memory. In this paper, we design the FTL using clustered hash table and two phase software caching method to translate logical address into physical address fastly. The experimental results show that the address translation performance of CFTL is 13.3% higher than that of NFTL and 8% higher than that of AFTL, and the memory usage of CFTL is 75% smaller than that of AFTL.

Flash Memory Shadow Paging Scheme Using Deferred Cleaning List for Portable Databases (휴대용 데이터베이스를 위한 지연된 소거 리스트를 이용하는 플래시 메모리 쉐도우 페이징 기법)

  • Byun Si-Woo
    • Journal of Information Technology Applications and Management
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    • v.13 no.2
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    • pp.115-126
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    • 2006
  • Recently, flash memories are one of best media to support portable computer's storages in mobile computing environment. We propose a new transaction recovery scheme for a flash memory database environment which is based on a flash media file system. We improved traditional shadow paging schemes by reusing old data pages which are supposed to be invalidated in the course of writing a new data page in the flash file system environment. In order to reuse these data pages, we exploit deferred cleaning list structure in our flash memory shadow paging (FMSP) scheme. FMSP scheme removes the additional storage overhead for keeping shadow pages and minimizes the I/O performance degradation caused by data page distribution phenomena of traditional shadow paging schemes. We also propose a simulation model to show the performance of FMSP. Based on the results of the performance evaluation, we conclude that FMSP outperforms the traditional scheme.

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Anticipatory I/O Management for Clustered Flash Translation Layer in NAND Flash Memory

  • Park, Kwang-Hee;Yang, Jun-Sik;Chang, Joon-Hyuk;Kim, Deok-Hwan
    • ETRI Journal
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    • v.30 no.6
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    • pp.790-798
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    • 2008
  • Recently, NAND flash memory has emerged as a next generation storage device because it has several advantages, such as low power consumption, shock resistance, and so on. However, it is necessary to use a flash translation layer (FTL) to intermediate between NAND flash memory and conventional file systems because of the unique hardware characteristics of flash memory. This paper proposes a new clustered FTL (CFTL) that uses clustered hash tables and a two-level software cache technique. The CFTL can anticipate consecutive addresses from the host because the clustered hash table uses the locality of reference in a large address space. It also adaptively switches logical addresses to physical addresses in the flash memory by using block mapping, page mapping, and a two-level software cache technique. Furthermore, anticipatory I/O management using continuity counters and a prefetch scheme enables fast address translation. Experimental results show that the proposed address translation mechanism for CFTL provides better performance in address translation and memory space usage than the well-known NAND FTL (NFTL) and adaptive FTL (AFTL).

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SSR (Simple Sector Remapper) the fault tolerant FTL algorithm for NAND flash memory

  • Lee, Gui-Young;Kim, Bumsoo;Kim, Shin-han;Byungsoo Jung
    • Proceedings of the IEEK Conference
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    • 2002.07b
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    • pp.932-935
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    • 2002
  • In this paper, we introduce new FTL(Flash Translation Layer) driver algorithm that tolerate the power off errors. FTL driver is the software that provide the block device interface to the upper layer software such as file systems or application programs that using the flash memory as a block device interfaced storage. Usually, the flash memory is used as the storage devices of the mobile system due to its low power consumption and small form factor. In mobile system, the state of the power supplement is not stable, because it using the small sized battery that has limited capacity. So, a sudden power off failure can be occurred when we read or write the data on the flash memory. During the write operation, power off failure may introduce the incomplete write operation. Incomplete write operation denotes the inconsistency of the data in flash memory. To provide the stable storage facility with flash memory in mobile system, FTL should provide the fault tolerance against the power off failure. SSR (Simple Sector Remapper) is a fault tolerant FTL driver that provides block device interface and also provides tolerance against power off errors.

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