• Title/Summary/Keyword: flash Memory

Search Result 788, Processing Time 0.027 seconds

Tracking Cold Blocks for Static Wear Leveling in FTL-based NAND Flash Memory (메모리에서 정적 마모도 평준화를 위한 콜드 블록 추적 기법)

  • Jang, Yonghun;Kim, Sungho;Hwang, Sang-Ho;Lee, Myungsub;Park, Chang-Hyeon
    • IEMEK Journal of Embedded Systems and Applications
    • /
    • v.12 no.3
    • /
    • pp.185-192
    • /
    • 2017
  • Due to the characteristics of low power, high durability and high density, NAND flash memory is being heavily used in various type of devices such as USB, SD card, smart phone and SSD. On the other hand, because of another characteristic of flash cell with the limited number of program/erase cycles, NAND flash memory has a short lifetime compared to other storage devices. To overcome the lifetime problem, many researches related to the wear leveling have been conducted. This paper presents a method called a TCB (Tracking Cold Blocks) using more reinforced constraint conditions when classifying cold blocks than previous works. TCB presented in this paper keeps a MCT (Migrated Cold block Table) to manage the enhanced classification process of cold blocks, with which unnecessary migrations of pages can be reduced much more. Through the experiments, we show that TCB reduces the overhead of wear leveling by about 30% and increases the lifetime up to about 60% compared to BET and BST.

Performance of the Coupling Canceller with the Various Window Size on the Multi-Level Cell NAND Flash Memory Channel (멀티레벨셀 낸드 플래시 메모리에서 커플링 제거기의 윈도우 크기에 따른 성능 비교)

  • Park, Dong-Hyuk;Lee, Jae-Jin
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.37 no.8A
    • /
    • pp.706-711
    • /
    • 2012
  • Multi-level cell NAND flash is a flash memory technology using multiple levels per cell to allow more bits to be stored. Currently, most multi-level cell NAND stores 2 bits of information per cell. This reduces the amount of margin separating the states and results in the possibility of more errors. The most error cause is coupling noise. Thus, in this paper, we studied coupling noise cancellation scheme for reduction memory on the 16-level cell NAND flash memory channel. Also, we compared the performance threshold detection and proposed scheme.

Self-adaptive testing to determine sample size for flash memory solutions

  • Byun, Chul-Hoon;Jeon, Chang-Kyun;Lee, Taek;In, Hoh Peter
    • KSII Transactions on Internet and Information Systems (TIIS)
    • /
    • v.8 no.6
    • /
    • pp.2139-2151
    • /
    • 2014
  • Embedded system testing, especially long-term reliability testing, of flash memory solutions such as embedded multi-media card, secure digital card and solid-state drive involves strategic decision making related to test sample size to achieve high test coverage. The test sample size is the number of flash memory devices used in a test. Earlier, there were physical limitations on the testing period and the number of test devices that could be used. Hence, decisions regarding the sample size depended on the experience of human testers owing to the absence of well-defined standards. Moreover, a lack of understanding of the importance of the sample size resulted in field defects due to unexpected user scenarios. In worst cases, users finally detected these defects after several years. In this paper, we propose that a large number of potential field defects can be detected if an adequately large test sample size is used to target weak features during long-term reliability testing of flash memory solutions. In general, a larger test sample size yields better results. However, owing to the limited availability of physical resources, there is a limit on the test sample size that can be used. In this paper, we address this problem by proposing a self-adaptive reliability testing scheme to decide the sample size for effective long-term reliability testing.

Implementation of Memory Efficient Flash Translation Layer for Open-channel SSDs

  • Oh, Gijun;Ahn, Sungyong
    • International journal of advanced smart convergence
    • /
    • v.10 no.1
    • /
    • pp.142-150
    • /
    • 2021
  • Open-channel SSD is a new type of Solid-State Disk (SSD) that improves the garbage collection overhead and write amplification due to physical constraints of NAND flash memory by exposing the internal structure of the SSD to the host. However, the host-level Flash Translation Layer (FTL) provided for open-channel SSDs in the current Linux kernel consumes host memory excessively because it use page-level mapping table to translate logical address to physical address. Therefore, in this paper, we implemente a selective mapping table loading scheme that loads only a currently required part of the mapping table to the mapping table cache from SSD instead of entire mapping table. In addition, to increase the hit ratio of the mapping table cache, filesystem information and mapping table access history are utilized for cache replacement policy. The proposed scheme is implemented in the host-level FTL of the Linux kernel and evaluated using open-channel SSD emulator. According to the evaluation results, we can achieve 80% of I/O performance using the only 32% of memory usage compared to the previous host-level FTL.

The Analysis of Lateral Charge Migration at 3D-NAND Flash Memory by Tapering and Ferroelectric Polarization (Tapering과 Ferroelectric Polarization에 의한 3D NAND Flash Memory의 Lateral Charge Migration 분석)

  • Lee, Jaewoo;Lee, Jongwon;Kang, Myounggon
    • Journal of IKEEE
    • /
    • v.25 no.4
    • /
    • pp.770-773
    • /
    • 2021
  • In this paper, the retention characteristics of 3D NAND flash memory applied with tapering and ferroelectric (HfO2) structure were analyzed after programming operation. Electrons trapped in nitride are affected by lateral charge migration over time. It was confirmed that more lateral charge migration occurred in the channel thickened by tapering of the trapped electrons. In addition, the Oxide-Nitride-Ferroelectric (ONF) structure has better lateral charge migration due to polarization, so the change in threshold voltage (Vth) is reduced compared to the Oxide-Nitride-Oxide (ONO) structure.

Electro-Thermal Annealing of 3D NAND Flash Memory Using Through-Silicon Via for Improved Heat Distribution (Through-Silicon Via를 활용한 3D NAND Flash Memory의 전열 어닐링 발열 균일성 개선)

  • Young-Seo Son;Khwang-Sun Lee;Yu-Jin Kim;Jun-Young Park
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.36 no.1
    • /
    • pp.23-28
    • /
    • 2023
  • This paper demonstrates a novel NAND flash memory structure and annealing configuration including through-silicon via (TSV) inside the silicon substrate to improve annealing efficiency using an electro-thermal annealing (ETA) technique. Compared with the conventional ETA which utilizes WL-to-WL current flow, the proposed annealing method has a higher annealing temperature as well as more uniform heat distribution, because of thermal isolation on the silicon substrate. In addition, it was found that the annealing temperature is related to the electrical and thermal conductivity of the TSV materials. As a result, it is possible to improve the reliability of NAND flash memory. All the results are discussed based on 3-dimensional (3-D) simulations with the aid of the COMSOL simulator.

Cost Models of Energy-based Query Optimization for Flash-aware Embedded DBMS (플래시 기반 임베디드 DBMS의 전력기반 질의 최적화를 위한 비용 모델)

  • Kim, Do-Yun;Park, Sang-Won
    • Journal of the Institute of Electronics Engineers of Korea CI
    • /
    • v.45 no.3
    • /
    • pp.75-85
    • /
    • 2008
  • The DBMS are widely used in embedded systems. The flash memory is used as a storage device of a embedded system. The optimizer of existing database system assumes that the storage device is disk. There is overhead to overwrite on flash memory unlike disk. The block of flash memory should be erased before write. Due to this reason, query optimization model based on disk does not adequate for flash-aware database. Especially embedded system should minimize the consumption of energy, but consumes more energy because of excessive erase operations. This paper proposes new energy based cost model of embedded database and shows the comparison between disk based cost model and energy based cost model.

Highly Integrated 3-dimensional NOR Flash Array with Vertical 4-bit SONOS (V4SONOS) (수직형 4-비트 SONOS를 이용한 고집적화된 3차원 NOR 플래시 메모리)

  • Kim, Yoon;Yun, Jang-Gn;Cho, Seong-Jae;Park, Byung-Gook
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.47 no.2
    • /
    • pp.1-6
    • /
    • 2010
  • We proposed a highly integrated 3-dimensional NOR Flash memory array by using vertical 4-bit SONOS NOR flash memory. This structure has a vertical channel, so it is possible to have a long enough channel without extra cell area. Therefore, we can avoid second-bit effect, short channel effect, and redistribution of injected charges. And the proposed array structure is based on three-dimensional integration. Thus, we can obtain a NOR flash memory having $1.5F^2$/bit cell size.

A Cleaning Policy for Mobile Computers using Flash Memory (플래시메모리를 사용하는 이동컴퓨터에서 클리닝 정책)

  • 민용기;박승규
    • Proceedings of the IEEK Conference
    • /
    • 1998.10a
    • /
    • pp.495-498
    • /
    • 1998
  • Mobile computers have restrictions for size, weight, and power consumption that are different from traditional workstations. Storage device must be smaller, lighter. Low power consumed storage devices are needed. At the present time, flash memory device is a reasonable candidate for such device. But flash memory has drawbacks such as bulk erase operation and slow program time. This causes of worse average write performances. This paper suggests a storage method which improves write performance.

  • PDF

Design of the Flash Memory for Image/voice Recorder (화상ㆍ음성 레코더를 위한 플래쉬 메모리 설계)

  • 신필순;김동현;곽윤식;김백기;신재룡
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2001.10a
    • /
    • pp.567-570
    • /
    • 2001
  • In this paper, we proposed flash memory design method for image and voice recoder based on the standard imageㆍvoice codec algorithm. For implementation of this method we designed image voice browser which is application system of flash memory and card using GDS30C6001 USB controller. To process image and voice data we designed root directory of image and voice files repectively. To extend application of image and voice data we added various information to the system.

  • PDF