• ETRI Journal
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• v.34 no.2
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• pp.256-259
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• 2012

The double-base number system has been used in digital signal processing systems for over a decade because of its fast inner product operation and low hardware complexity. This letter proposes an innovative multiplier architecture using hybrid operands. The multiplier can easily be linked to flash analog-to-digital converters or digital systems through a double-base number encoder (DBNE) for realtime signal processing. The design of the DBNE and the multiplier enable faster digital signal processing and require less hardware resources compared to the binary processing method.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.2
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• pp.95-103
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• 2011

This paper proposes a 6b 1.2 GS/s 47.8 mW 0.17 $mm^2$ 65 nm CMOS ADC for high-rate wireless personal area network systems. The proposed ADC employs a source follower-free flash architecture with a wide input range of 1.0 $V_{p-p}$ at a 1.2 V supply voltage to minimize power consumption and high comparator offset effects in a nanometer CMOS technology. The track-and-hold circuits without source followers, the differential difference amplifiers with active loads in pre-amps, and the output averaging layout scheme properly handle a wide-range input signal with low distortion. The interpolation scheme halves the required number of pre-amps while three-stage cascaded latches implement a skew-free GS/s operation. The two-step bubble correction logic removes a maximum of three consecutive bubble code errors. The prototype ADC in a 65 nm CMOS demonstrates a measured DNL and INL within 0.77 LSB and 0.98 LSB, respectively. The ADC shows a maximum SNDR of 33.2 dB and a maximum SFDR of 44.7 dB at 1.2 GS/s. The ADC with an active die area of 0.17 $mm^2$ consumes 47.8 mW at 1.2 V and 1.2 GS/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.47-54
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• 2006

This work proposes a dual-channel 6b 1GS/s ADC for ultra wide-band communication system applications. The proposed ADC based on a 6b interpolated flash architecture employs wide-band open-loop track-and-hold amplifiers, comparators with a wide-range differential difference pre-amplifier, latches with reduced kickback noise, on-chip CMOS references, and digital bubble-code correction circuits to optimize power, chip area, and accuracy at 1GS/s. The ADC implemented in a 0.18um 1P6M CMOS technology shows a signal-to-noise-and-distortion ratio of 30dB and a spurious-free dynamic range of 39dB at 1GS/s. The measured differential and integral non-linearities of the prototype ADC are within 1.0LSB and 1.3LSB, respectively. The dual-channel ADC has an active area of $4.0mm^2$ and consumes 594mW at 1GS/s and 1.8V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.4 s.334
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• pp.37-44
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• 2005

In this paper, a new type of the TC-to-BC encoder for high speed flash ADC's, called the Successive Selection Encoder (SSE), is proposed. In contrast to the conventional fat tree encoder based on OR operations, the W- outputs, in the new design, are obtained directly from TC inputs through simple MUX operations. The detailed structure of the SSE has been determined systematically by the method of the logical effort and the simulation oil Hynix 0.25um process. The theoretical and experimental results show that (1) it is not required to generate one-out-of-n signals, (2) the number of gates is reduced by the factor of 1/3, and (3) the speed is improved more than 2-times, compared to the fat tree encoder. It is speculated that the SSE proposed in this study is an effective solution for bottleneck problems in high speed ADCs.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38A no.4
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• pp.303-309
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• 2013

A low power 6-bit flash ADC that uses an input voltage range detection algorithm is described. An input voltage level detector circuit has been designed to overcome the disadvantages of the flash ADC which consume most of the dynamic power dissipation due to comparators array. In this work, four digital input voltage range detectors are employed and each input voltage range detector generates the specific clock signal only if the input voltage falls between two adjacent reference voltages applied to the detector. The specific clock signal generated by the detector is applied to turn the corresponding latched comparators on and the rest of the comparators off. This ADC consumes 68.82mW with a single power supply of 1.2V and achieves 4.9 effective number of bits for input frequency up to 1MHz at 500 MS/s. Therefore it results in 4.75pJ/step of Figure of Merit (FoM). The chip is fabricated in 0.13-um CMOS process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.8
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• pp.56-63
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• 2010

This work proposes a 12b 100MS/s 0.13um CMOS pipeline ADC for battery-powered mobile video applications such as DVB-Handheld (DVB-H), DVB-Terrestrial (DVB-T), Satellite DMB (SDMB), and Terrestrial DMB (TDMB) requiring high resolution, low power, and small size at high speed. The proposed ADC employs a three-step pipeline architecture to optimize power consumption and chip area at the target resolution and sampling rate. A single shared and switched op-amp for two MDACs removes a memory effect and a switching time delay, resulting in a fast signal settling. A two-step reference selection scheme for the last-stage 6b FLASH ADC reduces power consumption and chip area by 50%. The prototype ADC in a 0.13um 1P7M CMOS technology demonstrates a measured DNL and INL within 0.40LSB and 1.79LSB, respectively. The ADC shows a maximum SNDR of 60.0dB and a maximum SFDR of 72.4dB at 100MS/s, respectively. The ADC with an active die area of 0.92 $mm^2$ consumes 24mW at 1.0V and 100MS/s. The FOM, power/($f_s{\times}2^{ENOB}$), of 0.29pJ/conv. is the lowest of ever reported 12b 100MS/s ADCs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.274-286
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• 2016

This paper presents a 4-channel multi-rate vertical-cavity surface-emitting laser (VCSEL) driver. In order to keep the output power constant with respect to the process, voltage, temperature (PVT) variations, this research proposes automatic power and magnitude. For the fast settling time, the high-speed 10-bit time-interleaved Flash-successive approximation analog to digital converter (Flash-SAR ADC) is proposed and shared for automatic power and magnitude calibration to reduce the die area and power consumption. This chip is fabricated using $0.13-{\mu}m$ CMOS technology and the die area is $4.2mm^2$. The power consumption is 117.84 mW per channel from a 3.3 V supply voltage at 10 Gbps. The measured resolution of bias /modulation current for APC/AMC is 0.015 mA.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.5 s.347
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• pp.54-63
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• 2006

This work proposes a 14b 100MS/s 0.18um CMOS ADC with optimized resolution, conversion speed, die area, and power dissipation to obtain the performance required in the fourth-generation mobile communication systems. The 3-stage pipeline ADC, whose optimized architecture is analyzed and verified with behavioral model simulations, employs a wide-band low-noise SHA to achieve a 14b level ENOB at the Nyquist input frequency, 3-D fully symmetric layout techniques to minimize capacitor mismatch in two MDACs, and a back-end 6b flash ADC based on open-loop offset sampling and interpolation to obtain 6b accuracy and small chip area at 100MS/s. The prototype ADC implemented in a 0.18um CMOS process shows the measured DNL and INL of maximum 1.03LSB and 5.47LSB, respectively. The ADC demonstrates a maximum SNDR and SFDR of 59dB and 72dB, respectively, and a power consumption of 145mW at 100MS/s and 1.8V. The occupied active die area is $3.4mm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.57-60
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• 2004

This paper presents multibit Sigma-Delta ADC using Leslie-Singh Structure to Improve nonlinearity of feedback loop. 4-bit flash ADC for multibit Quantization in Sigma Delta modulator offers the following advantages such as lower quantization noise, more accurate white-noise level and more stability over single quantization. For the feedback paths consisting of DAC, the DAC element should have a high matching requirement in order to maintain the linearity performance which can be obtained by the modulator with a multibit quantizer. Thus a Sigma-Delta ADC usually adds the dynamic element matching digital circuit within feedback loop. It occurs complexity of Sigma-Delta Circuit and increase of power dissipation. In this paper using the Leslie-Singh Structure for improving nonliearity of ADC. This structure operate at low oversampling ratio but is difficult to achieve high resolution. So in this paper propose improving loop filter for single-bit feedback multi-bit quantization Sigma-Delta ADC. It obtained 94.3dB signal to noise ratio over 615kHz bandwidth, and 62mW power dissipation at a sampling frequency of 19.6MHz. This Sigma Delta ADC is fabricated in 0.25um CMOS technology with 2.5V supply voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1222-1225
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• 2004

This paper presents multibit Sigma-Delta ADC using noise-shaped dynamic element matching(DEM). 5-bit flash ADC for multibit quantization in Sigma Delta modulator offers the following advantages such as lower quantization noise, more accurate white-noise level and more stability over single quantization. For the feedback paths consisting of DAC, the DAC element should have a high matching requirement in order to maintain the linearity performance which can be obtained by the modulator with a multibit quantizer. The DEM algorithm is implemented in such a way as to minimize additional delay within the feedback loop of the modulator Using this algorithm, distortion spectra from DAC linearity errors are shaped. Sigma Delta ADC achieves 82dB signal to noise ratio over 615H7z bandwidth, and 62mW power dissipation at a sampling frequency of 19.6MHz. This Sigma Delta ADC is designed to use 0.25um CMOS technology with 2.5V supply voltage and verified by HSPICE simulation.