• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.37-45
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• 2008

In this study, reliabilities of Cu (60 um)/SnAg (20 um) double-bump flip chip assemblies were investigated for the flip chip interconnections on organic substrates with 100 um pitch. After multiple reflows at $250^{\circ}C\;and\;280^{\circ}C$, bump contact resistances were almost same regardless of number of reflows and reflow temperature. In the high temperature storage test, there was no bump contact resistance change at $125^{\circ}C$ up to 2000 hours. However, bump contact resistances slightly increased at $150^{\circ}C$ due to Kirkendall voids formation. In the electromigration test, Cu/SnAg double-bump flip chip assemblies showed no electromigration until about 600 hours due to reduced local current density. Finally, in the thermal cycling test, thermal cycling failure mainly occurred at Si chip/Cu column interface which was found out the highest stress concentration site in the finite element analysis. As a result, Al pad was displaced out under thermal cycling. This failure mode was caused by normal compressive strain acting Cu column bumps along perpendicular direction of a Si chip.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Carbon letters
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• v.19
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• pp.72-78
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• 2016

Spinnable pitches and carbon fibers were successfully prepared from petroleum or coal pyrolysis residues. After pyrolysis fuel oil (PFO), slurry oil, and coal tar were simply filtered to eliminate the solid impurities, the characteristics of the raw materials were evaluated by elemental analysis, ¹³C nuclear magnetic resonance spectrometer, matrix-assisted laser desorption/ionization time-of-flight mass spectrometer (MALDI-TOF-MS), and so on. Spinnable pitches were prepared for melt-spinning carbon fiber through a simple distillation under strong nitrogen flow, and further vacuum distillation to obtain a high softening point. Carbon fibers were produced from the above pitches by single-hole melt spinning and additional heat treatment, for oxidization and carbonization. Even though spinnable pitches and carbon fibers were processed under the same conditions, the melt-spinning and properties of the carbon fiber were different depending on the raw materials. A fine carbon fiber could not be prepared from slurry oil, and the different diameter carbon fibers were produced from the PFO and coal tar pitch. These results seem to be closely correlated with the initial characteristics of the raw materials, under this simple processing condition.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.1-10
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• 2023

Recently, as the demand for high-performance computers and mobile products increases, semiconductor packages are becoming high-integration and high-density. Therefore, in order to transmit a large amount of data at once, micro bumps such as flip-chip and Cu pillar that can reduce bump size and pitch and increase I/O density are used. However, when the size of the bumps is smaller than 70 ㎛, the brittleness increases and electrical properties decrease due to the rapid increase of the IMC volume fraction in the solder joint, which deteriorates the reliability of the solder joint. Therefore, in order to improve these issues, a layer that serves to prevent diffusion is inserted between the UBM (Under Bump Metallization) or pillar and the solder cap. In this review paper, various studies to improve bonding properties by suppressing excessive IMC growth of micro-bumps through additional layer insertion were compared and analyzed.

• Journal of Welding and Joining
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• v.18 no.3
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• pp.89-96
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• 2000

As solder becomes small and fine, the reliability and solderability of solder joint are the critical issue in present electronic packaging industry. Besides the use of lead(Pb) containing solders for the interconnections of microelectronic subsystem assembly and packaging has enviromental problem. In this study, using Sn/Pb and Sn/Ag eutectic solder paste, in order to obtain decrease of solder joint strength with increasing aging time, initial solder joint strength and aging strength after 1000 hour aging at $100^{\circ}C$ were measured by peel test. And in order to obtain the growth of intermetallic compound(IMC) layer thickness, IMC layer thickness was measured by scanning electron microscope(SEM). As a result, solder joint strength was decreased with increasing aging time. The mean IMC layer thickness was increased linearly with the square root of aging time. The diffusion coefficient(D) of IMC layer was found to $1.29{\times}10^{-13}{\;}cm^2/s$ at using Sn/Pb solder paste, 7.56{\times}10^{-14}{\textrm}{cm}^2/s$ at using Sn/Ag solder paste.

• International Journal of Aeronautical and Space Sciences
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• v.8 no.1
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• pp.32-45
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• 2007

The T-50 advanced supersonic jet trainer employs the Relaxed Static Stability (RSS) concept to improve the aerodynamic performance while the flight control system stabilizes the unstable aircraft and provides adequate handling qualities. The T-50 flight control laws employ a proportional-plus-integral type controller based on a dynamic inversion method in longitudinal axis and a proportional type controller based on a blended roll system with simple roll rate feedback and beta-betadot feedback system. These control laws are verified by flight tests with various maneuver set flight envelopes and the control laws are updated to resolve flight test issues. This paper describes several concepts of flight control laws used in T-50 to resolve those flight test issues. Control laws for solving the roll-off problem during pitch maneuver in asymmetric loading configurations, improving the departure resistance in negative angle of attack conditions and enhancing the fine tracking performance in air-to-air tracking maneuvers are described with flight test data.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.43-49
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• 2006

The properties, behavior and reliability of the residual void in blind via hole(BVH) were carried out for the shape of BVH using the void extraction process. The residual void was perfectly removed in the specimens applied by the void extraction process, which was improved by 40% rather than the conventional process. The residual void in BVH was to be eliminated under a condition of 1.5 atm for more 30 sec with regardless of the shape of BVH. It was also observed that the residual void in BVH was not formed after the reliability test with JEDEC standard.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.09a
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• pp.219-225
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• 2002

This paper presents a novel "bumpless flip chip package"for cost! performance driven devices. Using the conventional electroplating and etching processes, this package enables the production of fine pitch BGA up to 256 I/O with single layer routing. An array of circuitry down to $25-50{\mu}{\textrm}{m}$ line/space is fabricated to fan-in and fan-out of the bond pads without using bumps or substrate. Various types of joint methods can be applied to connect the fine trace and the bond pad directly. The resin-filled terminal provides excellent compliancy between package and the assembled board. More interestingly, the thin film routing is similar to wafer level packaging whereas the fan-out feature enables high lead count devices to be accommodated in the BGA format. Details of the design concepts and processing technology for this novel package are discussed. Trade offs to meet various cost or performance goals for selected applications are suggested. Finally, the importance of design integration early in the technology development cycle with die-level and system-level design teams is highlighted as critical to an optimal design for performance and cost.

• Design & Manufacturing
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• v.14 no.3
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• pp.63-70
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• 2020

As the consumer market in the VR(virtual reality) and the head-up display industry grows, the demand for 5-axis machines and grooving machines using on a ultra-precision machining increasing. In this paper, ultra-precision diamond tools satisfying the cutting edge width of 500 nm were developed through the process research of a focused ion beam. The material used in the experiment was a single-crystal diamond tool (SCD), and the equipment for machining the SCD used a focused ion beam. In order to reduce the influence of the Gaussian beam emitted from the focused ion beam, the lift-off process technology used in the semiconductor process was used. 2.9 ㎛ of Pt was coated on the surface of the diamond tool. The sub-micron tool with a cutting edge of 492.19 nm was manufactured through focused ion beam machining technology. Toshiba ULG-100C(H3) equipment was used to process fine-pattern using the manufactured ultra-precision diamond tool. The ultra-precision machining experiment was conducted according to the machining direction, and fine burrs were generated in the pattern in the forward direction. However, no burr occurred during reverse machining. The width of the processed pattern was 480 nm and the price of the pitch was confirmed to be 1 ㎛ As a result of machining.

• Journal of radiological science and technology
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• v.43 no.6
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• pp.431-441
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• 2020

The purpose of this study was to construct a model of MVCT(Megavoltage Computed Tomography) dose calculation by using Dosimetry Check™, a program that radiation treatment dose verification, and establish a protocol that can be accumulated to the radiation treatment dose distribution. We acquired sinogram of MVCT after air scan in Fine, Normal, Coarse mode. Dosimetry Check™(DC) program can analyze only DICOM(Digital Imaging Communications in Medicine) format, however acquired sinogram is dat format. Thus, we made MVCT RC-DICOM format by using acquired sinogram. In addition, we made MVCT RP-DICOM by using principle of generating MLC(Multi-leaf Collimator) control points at half location of pitch in treatment RP-DICOM. The MVCT imaging dose in fine mode was measured by using ionization chamber, and normalized to the MVCT dose calculation model, the MVCT imaging dose of Normal, Coarse mode was calculated by using DC program. As a results, 2.08 cGy was measured by using ionization chamber in Fine mode and normalized based on the measured dose in DC program. After normalization, the result of MVCT dose calculation in Normal, Coarse mode, each mode was calculated 0.957, 0.621 cGy. Finally, the dose resulting from the process for acquisition of MVCT can be accumulated to the treatment dose distribution for dose evaluation. It is believed that this could be contribute clinically to a more realistic dose evaluation. From now on, it is considered that it will be able to provide more accurate and realistic dose information in radiation therapy planning evaluation by using Tomotherapy.