• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.2
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• pp.190-193
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• 2022

In this work, the effect of sputtering working pressure for the tellurium film and its thin-film transistor was investigated. The transfer characteristics of tellurium thin-film transistors were improved by increasing the working pressure during sputtering process. As increasing working pressure, physical and optical properties of Te films such as crystallinity, transmittance, and surface roughness were improved. Therefore, the improved transfer characteristics of Te thin-film transistors may originate from both improved interface properties between the silicon oxide gate dielectric layer and the tellurium active layer with an improved quality of Te film. In conclusion, the control of working pressure during sputtering would be important for obtaining high-performance tellurium-based thin film transistor

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.81-86
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• 1995

Aluminum has been deposited selectively on TiN surfaces in the presence of Si, SiO2 from Dimethyethylamine Alane(DMEAA). The film properties of the deopsited AI film were determined by various methods(SEM, Auger, UV-photospectrometer, Four point-probe, XRD). The effect of in-situ H2 plasma precleaning was studied. The effect of gap distance, pressure and temperature on the properties(crystallinity, resistance, grain size, morphology) of AI film and on the growth rates was investigated. It was found that the plasma precleaning promotes the growth rate and there exists optimum thmperature for maximum growth rate.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.151-153
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• 2005

Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) by the change of process parameters for the improvement of electrical and optical properties of ITO thin film. Light transparent efficiency of ITO thin film was improved after CMP process at the optimized process parameters compared to that before CMP process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.354-355
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• 2005

Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) by the change of process parameters for the improvement of electrical and optical properties of ITO thin film. Light transparent efficiency of ITO thin film was improved after CMP process at the optimized process parameters compared to that before CMP process.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.190-197
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• 1992

In this study we have investigated physical and electrical properties of high temperature oxide (HTO) thin film using dichlorosilane (DCS) gas. This film had low etch rate and excellent step coverage, and its characteristics of Si-O bond were similar to those of thermal oxide. I-V curves also showed similar electrical properties to those of thermally grown oxide (SiO2) while time dependent dielectric breakdown (TDDB) results revealed 1/4 value of thermal oxide. However, defect density was measured to be much lower value than that of thermal oxide.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.5
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• pp.211-213
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• 2005

[$SiO_2$] film coated as a passivation layer for YBCO based electronic devices is investigated by measuring the micro wave properties of micro strip line resonators. The $SiO_2$ film coated resonators are compared with coated resonators for two degradation conditions, a $200^{\circ}C$ annealing in air and an exposure to air at $85^{\circ}C\;85\%$ relative humidity. The $SiO_2$ film reduces the YBCO thin film degradation caused by oxygen stoichiometry change and reaction with water.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.310-311
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• 2009

New X-shaped crystalline molecules have been synthesized through various coupling reactions and their electronic properties were investigated. They exhibit good solubility in common organic solvents and good self-film forming properties. They are intrinsically crystalline as they exhibit well-defined X-ray diffraction patterns from uniform and preferred orientations of molecules. They also exhibited high field effect mobilities in thin film transistor (TFT) and good device performances.

• Korean Journal of Food Science and Technology
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• v.24 no.6
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• pp.574-580
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• 1992

Chitin was isolated from the residue of enzymatically hydrolyzed crab, Portunus trituberculatus, and further deacetylated by alkaline boiling to make chitosan. The physical properties of chitosan solution and its film forming properties were examined. The functional characteristics of chitosan film were compared to those of cellophane, polyvinyl chloride (PVC) and polyethylene (PE) films. The proximate chemical composition of chitin obtained from crab residue was 6.95% nitrogen, 0.3% crude ash and 4.57% moisture and the product yield was 12.8% based on a dry material basis. The degree of deacetylation of chitosan was $79{\sim}92%$ and $70{\sim}86%$ as determined by IR spectroscopy, and $70{\sim}86%$ as determined by colloid titration method each respectively. The chitosan at 1% acetic acid solution showed distinct pseudoplastic flow behavior. The flow behavior index and consistency index were 0.8886, 0.2084 $MPa{\cdot}s^n$ for 0.4% solution and 0.8498, 0.6190 $MPa{\cdot}s^n$ for 0.8% solution, respectively. The chitosan film had the highest tensile strength $(888 kg/cm^2)$ and water permeability $(100\;g/m^2{\cdot}24\;hrs)$ among the tested films, but relatively low elongation property (49%). It showed the similar tear strength (90kg/cm) and light permeability (87.7%) to other films tested in spite of the relatively high haze value (12.5%). As the thickness of chitosan film increased from 0.025 to 0.050 mm, the tensile strength of film decreased distictively, and the degree of elongation, tear strength, and water permeability of film also decreased slightly. Whereas the light permeability of film did not change and the haziness of film slightly increased by the increase of film thickness.

• Microbiology and Biotechnology Letters
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• v.24 no.5
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• pp.546-552
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• 1996

The applicability of chitosan, a biodegradable natural polymer, as the coating material to prevent the dispersal of the spores of the apple white rot agent Botryosphaeria dothidea, was investigated. The physical properties of mixed chitosan/polyvinyl alcohol(PVA) film showed the increased physical properties for film formation, such as tensil strength, elongation, and viscosity, compared to either chitosan or PVA film. The FT-IR spectra of chitosan/PVA film indicated that the film was formed by simple blending not by any new synthetic bond. The chitosan and chitosan/PVA film showed effective antifungal activity on B. dothidea. The formed films were well decomposed by ASTM strains used for biodegradability test, on the other hand, the PVA film could not be decomposed by above standard strains. The field test at apple orchard showed that the dispersal of B. dothidea spores could be effectively reduced by coated film, especially by chitosan/PVA film. The spore dispersal was reduced upto 97.0% by 1.0% chitosan/5.0% PVA film during 4 months.