Metalorganic Chemical Vapor Deposition of Aluminum Thin Film for ULSI Using Dimethylethylamine Alane(DMEAA)

DMEAA를 이용한 초고집적 회로용 알루미늄 박막의 제조

Aluminum has been deposited selectively on TiN surfaces in the presence of Si, SiO2 from Dimethyethylamine Alane(DMEAA). The film properties of the deopsited AI film were determined by various methods(SEM, Auger, UV-photospectrometer, Four point-probe, XRD). The effect of in-situ H2 plasma precleaning was studied. The effect of gap distance, pressure and temperature on the properties(crystallinity, resistance, grain size, morphology) of AI film and on the growth rates was investigated. It was found that the plasma precleaning promotes the growth rate and there exists optimum thmperature for maximum growth rate.