• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.658-666
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• 2000

Sb and Sb-Fe doped SnO$_2$film resistors were prepared by spray pyrolysis technique. The effects of Sb and Sb-Fe addition on TCR and electrical properties of SnO$_2$film resistors were studied. Also the dependence of electrical properties on the substrate temperature and substrate-nozzle distance was investigated. The Sn-Sb system with 7.9 mol% SbCl$_3$(STO-406) and Sn-Sb-Fe systems with 7.3 mol% SbCl$_3$+7.3 mol% FeCl$_3$(STO-407) and with 3.4 mol% SbCl$_3$+7.7mol% FeCl$_3$(STO-408) were prepared. Both of the systems Sn-Sb and Sn-Sb-Fe represented nonlinearity of TCR with temperature. As the amount of Fe increased TCR was shifted to positive direction. Decreasing Sb or increasing Fe caused resistivity to increase. Also increasing Fe caused the crystallization degree of rutile structure in SnO$_2$film to decrease. The electrical resistivity decreased with increasing substrate temperature The resistivity decreased with increasing substrate-nozzle distance in the ranges from 15 to 25 cm and increased rapidly at the distance over 25cm.

• Corrosion Science and Technology
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• v.15 no.4
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• pp.171-181
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• 2016

In this work, synergistic corrosion inhibition effect of nitrite and 3 kinds of ethanolamines on ductile cast iron using chemical and electrochemical methods was evaluated. This work attempts to clarify the synergistic effect of nitrite and ethanolamines. The effects of single addition of TEA, DEA, and MEA, and mixed addition of nitrite plus TEA, DEA or MEA on the corrosion inhibition of ductile cast iron in a tap water were evaluated. A huge amount of single addition of ethanolamine was needed. However, the synergistic effect by mixed addition was observed regardless of the combination of nitrite and triethanolamines, but their effects increased in a series of MEA + nitrite > DEA + nitrite > TEA + nitrite. This tendency of synergistic effect was attributed to the film properties and polar effect; TEA addition couldn't form the film showing high film resistance and semiconductive properties, but DEA or MEA could build the film having relatively high film resistance and n-type semiconductive properties. Moreover, it can be explained that this behaviour was closely related to electron attractive group within the ethanolamines, and thus corrosion inhibition power depends upon the number of the electron attractive group of MEA, DEA, and TEA.

• Fisheries and Aquatic Sciences
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• v.15 no.1
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• pp.9-14
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• 2012

The objectives of this research were to improve the film-forming properties of Channel Catfish Ictalurus punctatus skin gelatin (CSG) by cross-linking with transglutaminase (TG), determine and optimize the TG reaction time, and characterize the mechanical and barrier properties of CSG edible film. Cross-linking of CSG was performed by TG for 0, 10, 20, 30, and 40 min at $50^{\circ}C$, and the reaction was confirmed by sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE). The color and mechanical and barrier properties of edible films fabricated with CSG cross-linked with TG were characterized. Gelatin yields from the extraction ranged from 18.2% to 23.3%. SDS-PAGE exhibited dark bands at 120 and 250 kDa, indicating successful TG-mediated cross-linking. The color of CSG film was not affected by TG cross-linking. The tensile strength of CSG films cross-linked with TG decreased from 42.59 to 21.73 MPa and the percent elongation increased from 42.92% to 76.96% as reaction times increased from 0 to 40 min. There was no significant difference in water vapor permeability of CSG films.

• The Korean Journal of Ceramics
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• v.1 no.4
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• pp.191-196
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• 1995

Using sol-gel processing method, thin films of lathanum modified lead titanate(PLT) on Corning 7059 glass were prepared. A differential thermal analysis (DTA/TG) curve of gel powder and infrared spectra (FT-IR) of the films were measured to estimate residual organices in them. The heat-treated films were characterized by X-ray diffraction(XRD). Microstructures of the films were observed by a scanning electron microscope (SEM). Optical properties of the films were determined by a UV-VIS spectrophotometer. The waveguiding properties and optical attenuation were measured with the end coupling method and the cut back method. Effects of the drying conditions on the transmittance and the propagation loss of the films were investigated. Experimemtal results showed that the content of residual organics in the film decreased as the drying temperature of the film increased. As the La content of the film increased, the grain size decreased and the transmittance increased. The transmittances of the films increased with the increasing of the drying temperature. The propagation losses in the film decreased as the drying temperature increased.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.212-218
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• 2012

The optical properties of AZO thin films prepared by the RF mangnetron sputtering system was studied to research the dependance of chemical properties of substrate. The substrate was the SiOC film deposited by Inductively coupled plasma chemical vapor deposition with various gas flow rate of $O_2$ and Ar (DMDMOS). In accordance with the increase of Ar gas flow rates, the Si-O bond in the SiOC film increased and then progressed the amorphism. The roughness of AZO grown on SiOC film with high degree of amorphism decreased and then improved the flatness of surfaces. Moreover, the ultra violet emission with high intensity was spontaneously induced in the AZO film growed on SiOC film with high degree of amorphism.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.552-557
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• 2006

Electrical, optical, surface, and structural properties of amorphous indium-zinc-oxide (a-IZO) grown by box cathode sputtering (BCS) were compared with crystalline indium-tin-oxide (c-ITO) anode films grown by conventional DC sputtering (DCS). Although x-ray diffraction plot of BCS-grown IZO film shows amorphous structure, the optical and electrical properties of a-IZO is comparable to those of c-ITO film. In particular, BCS-grown IZO films shows very smooth surface without defects such as pin hole and cracks because most of the energy of the sputtered atoms was confined in high density plasma region in box cathode gun. Furthermore polymer organic light emitting diodes (POLED) with the a-IZO anode film shows better electrical properties than that of POLED with the c-ITO anode film due to high work function and smooth surface of a-IZO. This suggested that BCS-grown a-IZO film is promising anode materials substituting conventional c-ITO anode in OLED and flexible displays.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.94-95
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• 2007

We have observed electrical properties of ZnO thin films for the fabrication of transparent thin film transistor. ZnO thin films were deposited on $Al_2O_3$(0001) substrate at various temperatures by pulsed laser deposition(PLD). The third of harmonic(355nm) Nd:YAG laser was used for pulsed laser deposition. X-ray diffraction(XRD), field emission-scanning electron microscope(FE-SEM), and photoluminescence were used to characterize physical and optical properties of ZnO thin film.. The results indicated the ZnO film showed good optical properties as increasing temperatures, with low FWHM of exciton-related peak and XRD(0002) peak.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.668-673
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• 1996

In this paper, (P $b_{1-x}$ L $a_{x}$)(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ (X=0-13[at%]) thin film were prepared by the Sol-Gel method, Multiple PLZT thin films were spin-coated on the Pt/Ti/ $SiO_{2}$Si substrate. The electrical properties of the films were investigated for varying the annealing temperature. In the PLZT(11/52/48) specimens, the dielectric ocnstant of 1236 and the polarization reversal time of 460[nm] were obtained and the breakdown of the film did not occur up to 1*10$^{10}$ cycles at the voltage of 7[V] by the bipolar acceleration. The remanent polarization and coercive field decreased with increasing the content of La in the range of 0-13[at%] and thin film of the PLZT(11/52/48) showed the value of 2.56[.mu.C/c $m^{2}$] and 21.1[kV/cm], respectively.ly.y.

• Journal of Magnetics
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• v.5 no.1
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• pp.19-22
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• 2000

The effects of a hard-biased Held on the magnetic and magnetoresistive properties of a crossed spin-valve head are investigated by computer simulation with particular emphasis on the asymmetry of the output signal. The spin-valve considered in this work is NiMn (25 nm)/NiFe (2.5 m)/Cu (3 nm)/NiFe (5.5 m), with a length of 1500 m and a width of 600 nm. A simple model is used where each magnetic layer consists of a single domain, and the magnetoresistance is a function of the angle between the magnetization directions of the two magnetic layers. The ideal crossed spin-valve structure is not realized with the present model and magnetic parameters, but the deviation from ideality is decreased by the hard-biased field. This results in the improvement of the linearity of the output signal with the use of the bias field. The magnetoresistance ratio and magnetoresistive sensitivity, however are reduced. The magnetic properties including the magnetoresistance are found to be strongly affected by magnetostatic interactions, particularly the inter-layer magnetostatic field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.229-233
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• 2019

Pure $BiFeO_3$ (BFO) and (Eu, V) co-doped $Bi_{0.9}Eu_{0.1}Fe_{0.975}V_{0.025}O_{3+{\delta}}$ (BEFVO) thin films were deposited on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by chemical solution deposition. The effects of co-doping were observed by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the BEFVO thin film were improved as compared to those of the pure BFO thin film. The remnant polarization ($2P_r$) of the BEFVO thin film was approximately $26{\mu}C/cm^2$ at a maximum electric field of 1,190 kV/cm with a frequency of 1 kHz. The leakage current density of the co-doped BEFVO thin film ($4.81{\times}10^{-5}A/cm^2$ at 100 kV/cm) was two orders of magnitude lower than of that of the pure BFO thin film.