Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Structural and Electrical Properties of BiFeO3 Thin Films by Eu and V Co-Doping

Eu와 V 동시 도핑에 의한 BiFeO3 박막의 구조와 전기적 특성

  • Received : 2019.02.21
  • Accepted : 2019.03.20
  • Published : 2019.05.01
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Abstract

Pure $BiFeO_3$ (BFO) and (Eu, V) co-doped $Bi_{0.9}Eu_{0.1}Fe_{0.975}V_{0.025}O_{3+{\delta}}$ (BEFVO) thin films were deposited on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by chemical solution deposition. The effects of co-doping were observed by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the BEFVO thin film were improved as compared to those of the pure BFO thin film. The remnant polarization ($2P_r$) of the BEFVO thin film was approximately $26{\mu}C/cm^2$ at a maximum electric field of 1,190 kV/cm with a frequency of 1 kHz. The leakage current density of the co-doped BEFVO thin film ($4.81{\times}10^{-5}A/cm^2$ at 100 kV/cm) was two orders of magnitude lower than of that of the pure BFO thin film.

Keywords

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Fig. 1. X-ray diffraction patterns of BFO and BEFVO thin films deposited on Pt(111)/Ti/SiO2/Si(100) substrates and (b) 2θ=22.5° and (c) 2θ=32°.

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Fig. 2. Raman Spectra of BFO, co-doped BEFVO thin films measured at room temperature.

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Fig. 3. FE-SEM morphologies of BFO, co-doped BEFVO thin films with cross-section micrographs.

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Fig. 4. Leakage current densities of BFO and BEFVO thin films measured at room temperature.

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Fig. 5. P-E hysteresis loops of BFO and BEFVO thin films at 1 kHz.

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