• 반도체디스플레이기술학회지
• /
• 제4권1호
• /
• pp.43-48
• /
• 2005

Metaloganic chemical vapor deposition, also known as metalorganic vapor phase epitaxy has become one of the main techniques for growing thin, high purity films for compound semiconductors such as GaAs, InP, and InGaAsP. In this study, the distribution of growth rate and composition of InGaAsP, InGaP, and InGaAs films are studied using computational method. The influences of process parameters such as pressure, temperature and precursors' partial pressure on the growth rate and composition distributions are analyzed. The film growth rate is increased in the upstream part according to the increase of temperature but not in the downstream part. The Ga composition in InGaAsP film shows an asymptotic behavior for temperature variation but As composition varies significantly within the temperature range considered in the present study. The overall film growth rates of InGaP, InGaAs and InGaAsP are decreased with increasing the Ga/In ratios of the source gases. Pressure variation does not seem to be a significant parameter to the film growth. Film growth characteristics of tertiary films such as InGaP and InGaAs show similar trends to the quaternary film, InGaAsP.

• 한국세라믹학회지
• /
• 제32권3호
• /
• pp.371-377
• /
• 1995

Silicon oxide films were grown on single-crystal silicon substrates at low temperatures (25~205$^{\circ}C$) in a low pressure electron cyclotron resonance (ECR) oxygen plasma. The growth rate of the silicon oxide film increased as the temperature increased or the pressure decreased. Also, the thickness of the silicon oxide film increased at negative bias voltage, but not changed at positive bias voltage. The growth law of the silicon oxide film was approximated to the parabolic form. Capacitance-voltage (C-V) and current density-electric field (J-E) characteristics were studied using Al/SiO2/p-Si MOS structures. For a 10.2 nm thick silicon oxide film, the leakage current density at the electric field of 1 MVcm-1 was less than 1.0$\times$10-8Acm-2 and the breakdown field was higher than 10 MVcm-1. The flat band voltage of Al/SiO2/p-Si MOS capacitor was varied in the range of -2~-3 V and the effective dielectric constant was 3.85. These results indicate that high quality oxide films with properties that are similar to those of thermal oxide film can be fastly grown at low temperature using the ECR oxygen plasma.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.589-592
• /
• 1999

This paper describes direct $\mu$C-Si/CaF$_2$/glass thin film growth by RPCVD system in a low temperature for thin film transistor (TFT), photovoltaic devices. and sensor applications. Experimental factors in a low temperature direct $\mu$ c-Si film growth are presented in terms of deposition parameters: SiH$_4$/H$_2$ ratio, chamber total pressure, substrate temperature, rf power, and CaF$_2$ buffer layer. The structural and electrical properties of the deposited films were studied by means of Raman spectroscopy, I-V, L-I-V, X-ray diffraction analysis and SEM. we obtain a crystalline volume fraction of 61%, preferential growth of (111) and (220) direction, and photosensitivity of 124. We achieved the improvement of crystallinity and electrical property by using the buffer layers of CaF$_2$ film.

• 한국결정성장학회지
• /
• 제13권4호
• /
• pp.157-164
• /
• 2003

$LaF_{3}$ thin films have been fabricated on Si (100) substrates under the highest possible vacuum condition by pulsed laser deposition (PLD) method. The temperature of the sbustrate varied from $20^{\circ}C$ to $800^{\circ}C$. The films deposited at the higher temperature indicated the sharper peaks in the X-ray diffraction measurement. A highly oriented film was successfully obtained at a substrate temperature of $800^{\circ}C$. The surface observation by the AFM revealed that the many hexagonal structures constructed the film. The XPS analysis revealed that the lacking of F in the film deposited at $600^{\circ}C$ were much more than that in film at $^20{\circ}C$. Adding the adequate amount of $CF_{4}$ gas in the growth chamber can compensate this lacking of F.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.1026-1029
• /
• 2001

Zinc films have been deposited onto various buffer layers, Al, Al-Cu, Ag and Ag-Al, by vacuum evaporation method in order to investigate the film microstructure and its consequence on the film growth. Zn films were grown onto Al buffer layers with faster rates than on Ag buffer layers, because of the presence of preferred growth orientation. Especially, in the Zn film formation on the Ag layers, intermetallic compounds AgZn was formed to cause the different growth orientation from Zn film obtained on the Al layers.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2004년도 춘계학술대회
• /
• pp.1213-1218
• /
• 2004

Film growth rate of InP and GaAs using TMI, TMG, TBA and TBP is numerically predicted and compared to the experimental results. Obtained results show that the film growth rate is very sensitive to the thermal condition in the reactor. To obtain exact thermal boundary conditions at the reactor walls, we analyzed the gas flow and heat transfer in the reactor including outer tube as well as the inner reactor parts using a full three-dimensional model. The results indicate that the exact thermal boundary conditions are important to get precise film growth rate prediction.

• 한국재료학회지
• /
• 제12권6호
• /
• pp.482-487
• /
• 2002

A $TiO_2$ film for photocatalyst was prepared by anodic oxidation at 180V in acidic electrolyte and film formation mechanism was studied. The major part of anodic $TiO_2$ film consisted of anatase type structure and surface morphology exhibited a porous cell structure. The thickness growth rate of the oxide film with anodization time revealed two-stage slope corresponds to the surface morphology between anodic films. The growth of pores on cell structure and the growth rate of film with two-stage slope are related to the constant formation rate of the $TiO_2$ layer.

• 통합자연과학논문집
• /
• 제11권4호
• /
• pp.209-211
• /
• 2018

A zinc oxide thin film doped with aluminum was deposited by RF sputtering. The deposition temperature of the sputter chamber was kept constant at $350^{\circ}C$, the power supplied to the chamber was 75 W, the oxygen flow rate was changed to 10 sccm and 20 sccm, and the thin film deposition time was changed to 120 and 180 minutes. The structures of the deposited zinc oxide thin films were analyzed by van der Waals method using an X-ray diffractometer. As a result of X-ray diffraction, the amount of oxygen supplied to the zinc oxide thin film increased, and the surface growth of the (002), (400), (110), and (103) planes showed a change with increasing deposition time. Moreover, as the amount of oxygen supplied to the zinc oxide thin film increased, their shape was observed to be coarse, and the thin film' s particles shape was correlated with the oxygen chemical defect introduced.

• 생물환경조절학회지
• /
• 제21권4호
• /
• pp.312-316
• /
• 2012

본 연구는 비닐하우스 피복재인 폴리오레핀(PO)계 필름의 효과를 구명하고자 관행의 피복필름(PE + EVA)과 비교하여 피복재별 물리적 특성과 상추와 오이의 생육 및 수량을 검토하였다. 인장강도, 인열강도 등 피복재의 물리적 특성은 일반필름보다 PO필름이 우수하였다. 400~700 nm의 광합성유효광의 투과율은 일반필름에 비해 PO필름이 4.1% 높았고, 전체 광선투과율(300~1,100 nm)도 PO필름이 4.3% 높았다. 하우스 내의 주간 평균기온은 일반필름보다 PO필름이 $1.5^{\circ}C$ 높았고, 야간 평균기온도 PO필름이 $0.8^{\circ}C$ 높게 유지되었다. 주야간 상대습도는 필름 간에 유의적 차이가 없었다. 엽록소 함량은 오이의 경우 필름 간 유의적 차이는 없었으나 일반필름에 비해 PO필름이 엽록소 a가 약간 높았으며, 상추는 PO필름이 일반필름보다 유의하게 높았다. 수확기 오이 생육에 있어서 초장, 엽면적, 생체중 및 건물중 모두 일반필름보다 PO필름을 피복한 하우스에서 크고 무거웠다. 수확한 오이의 과실 수량은 일반필름에 비해 PO필름이 14.0% 높았고, 상추 수량도 일반필름보다 PO필름이 13.6% 높았다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.162-162
• /
• 2012

ZnPc and CuPc molecules stacked similar way in the film, but showed different growth modes in thermal evaporation. The distribution of CuPc crystals did not change by the film thickness, whereas the distribution of ZnPc became random as the increase of the film thickness. The disc type nanograins of CuPc were quite regularly distributed at the initial growth regime and the regular distribution of nanograins was kept during the film growth. On the other hand, ZnPc consisted in ellipsoid shaped nanograins and the distribution of nanograins was not regular in the initial growth regime. The irregular distribution of nanograins changed to the regular mode at the later growth regime by showing structure factor in GISAXS measurement. The different initial nanograin distribution in ZnPc and CuPc was related to the different nanostructure in the mixed layer with C60 to form the bulk heterojunction.