Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Growth of oriented $LaF_{3}$ thin films on Si (100) substrates by the pulsed laser deposition method

  • Yokotani, Atsushi (Department of Electrical and Electronic Engineering, Faculty of Engineering, Miyazaki University) ;
  • Ito, Tomomi (Department of Electrical and Electronic Engineering, Faculty of Engineering, Miyazaki University) ;
  • Sato, Akiko (Department of Electrical and Electronic Engineering, Faculty of Engineering, Miyazaki University) ;
  • Kurosawa, Kou (Department of Electrical and Electronic Engineering, Faculty of Engineering, Miyazaki University)
  • Published : 2003.08.01
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Abstract

$LaF_{3}$ thin films have been fabricated on Si (100) substrates under the highest possible vacuum condition by pulsed laser deposition (PLD) method. The temperature of the sbustrate varied from $20^{\circ}C$ to $800^{\circ}C$. The films deposited at the higher temperature indicated the sharper peaks in the X-ray diffraction measurement. A highly oriented film was successfully obtained at a substrate temperature of $800^{\circ}C$. The surface observation by the AFM revealed that the many hexagonal structures constructed the film. The XPS analysis revealed that the lacking of F in the film deposited at $600^{\circ}C$ were much more than that in film at $^20{\circ}C$. Adding the adequate amount of $CF_{4}$ gas in the growth chamber can compensate this lacking of F.

Keywords

References

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