• Korean Journal of Clinical Laboratory Science
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• v.36 no.1
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• pp.33-37
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• 2004

In order to study the effect of temperature of denaturation, annealing and extension and cycles on amplification of DNA by PCR method, We isolated the hepatitis B virus DNA from hepatitis B patient blood and compared the density of DNA amplified by Reference PCR Program (denaturation at $94^{\circ}C$ for 30 sec., annealing at $60^{\circ}C$ for 1 min., extension at $72^{\circ}C$ for 1 min., holding at $72^{\circ}C$ for 5min., 30 cycles) that is usually used in laboratory to the density of DNA amplified by PCR program changed only the denaturation temperature or annealing temperature or extension temperature. We amplified about 341bp of hepatitis B virus DNA by Reference PCR Program from hepatitis patient blood, but the DNAs denatured at $72^{\circ}C$ or $60^{\circ}C$ were not detectable on photoradiography film. The DNA amplified at $37^{\circ}C$ of annealing temperature was not detectable, but the DNA annealed at $72^{\circ}C$ was detectable the lower density of DNA than the DNA amplified by Reference PCR Program. Each DNA amplified by PCR program changed only the extension temperature to $37^{\circ}C$ or $60^{\circ}C$ was almost same density as DNA amplified by Reference PCR Program. We compared the density of hepatitis B virus DNA amplified by Reference PCR Program for 30 cycles, 20 cycles, 10 cycles, and 5 cycles. The DNA cycled for 20 cycles was not amplified well as cycled for 30 cycles, but the DNA was detectable on the photoradiography film. The DNAs amplified for 10 cycles or 5 cycles were not detectable on photoradiorgaphy film. The concentration of hepatitis B virus DNA amplified in Reference PCR condition for 30 cycles, 20 cycles, 10 cycles, and 5 cycles were $72{\mu}g/m{\ell}$, $83{\times}10^{-3}{\mu}g/m{\ell}$, $27{\times}10^{-6}{\mu}g/m{\ell}$, and nondetectable, respectively.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.645-651
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• 2014

GaN is most commonly used to make LED elements. But, due to differences of the thermal expansion coefficient and lattice mismatch with sapphire, dislocations have occurred at about $109{\sim}1010/cm^2$. Generally, a low temperature GaN buffer layer is used between the GaN layer and the sapphire substrate in order to reduce the dislocation density and improve the characteristics of the thin film, and thus to increase the efficiency of the LED. Further, patterned sapphire substrate (PSS) are applied to improve the light extraction efficiency. In this experiment, using an AlN buffer layer on PSS in place of the GaN buffer layer that is used mainly to improve the properties of the GaN film, light extraction efficiency and overall properties of the thin film are improved at the same time. The AlN buffer layer was deposited by using a sputter and the AlN buffer layer thickness was determined to be 25 nm through XRD analysis after growing the GaN film at $1070^{\circ}C$ on the AlN buffer CPSS (C-plane Patterned Sapphire Substrate, AlN buffer 25 nm, 100 nm, 200 nm, 300 nm). The GaN film layer formed by applying a 2 step epitaxial lateral overgrowth (ELOG) process, and by changing temperatures ($1020{\sim}1070^{\circ}C$) and pressures (85~300 Torr). To confirm the surface morphology, we used SEM, AFM, and optical microscopy. To analyze the properties (dislocation density and crystallinity) of a thin film, we used HR-XRD and Cathodoluminescence.

• Nuclear Engineering and Technology
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• v.5 no.3
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• pp.223-233
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• 1973

Thirty two different kinds of domestic plastic films for use in measuring high gamma-ray dose have been collected and their dosimetric characteristics investigated with the help of a Co-60 gamma radiation source. Among them a rigid polyvinyl chloride(PVC) film of 0.06mm in thickness which is manufactured by Lucky Chemical Co., Korea, seem to be the most suitable one for this purpose. The relation between optical density at 3100$\AA$ and radiation exposure in this PVC film was linear in the range of 0.6$\times$10$^{6}$ R to 1.3$\times$10$^{7}$ R, and also the film showed a good reproducibility within 9% under the standard experimental condition. The effect of absorbed dose, oxygen content of surrounding atmosphere and irradiation temperature have also been studied for this film. It appeared to have a good property in the dosimetrical point of view.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.69-72
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• 2012

In this study, deposition of low-dielectric constant SiOC(H) films by conventional plasma-enhanced chemical vapor deposition (PECVD) were investigated through various characterization techniques. The results show that, with an increase in the plasma power density, the relative dielectric constant (k) of the deposited films decreases whereas the refractive index increases. This is mainly due to the incorporation of organic molecules with $CH_3$ group into the Si-O-Si cage structure. It is as confirmed by FT-IR measurements in which the absorption peak at 1,129 $cm^{-1}$ corresponding to Si-O-Si cage structure increases with power plasma density. Electrical characterization reveals that even after fast thermal annealing process, the leakage current density of the deposited films is in the order of $10^{-11}$ A/cm at 1.5 MV/cm. The reliability of the SiOC(H) film is also further characterized by using BTS test.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1112-1115
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• 2007

Optical thickness method using double interferometer showed dynamic variations of both mechanical and optical thicknesses. Packing density measured a thickness ratio of before and after pressed single film. Lower swelled thickness of emitting layer in a device and densely packed film had shown better lifetime.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1125-1130
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• 2003

The electrophoretic deposition method using the suspension solution with additives under the electric potential was applied for the fabrication of YBCO superconductor wire. This method was able to simplify the fabrication facilities, and produce an uniform and dense thick film. To improve the critical current density of deposited films, the additive PEGs(Poly Ethylene Glycole) with the molecular weight of 600, 1000 and 3400 were used as chemical binders for the suspension solution. The organic additive (PEG) showed better effects to the properties of YBCO superconductor wire. The PEG improved the adhesion between superconductor particles and suppressed the crack on the surface, which enhanced the surface uniformity and density of YBCO deposited film. It was found that acetone suspension solution showed better deposition properties than the others. The samples fabricated in the solution with the additive, 8 vol.% of 1% PEG(1000), showed the highest critical current density measured as 2300∼2400 A/$\textrm{cm}^2$ at 77 K, 0 T.

• Proceedings of the KSME Conference
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• 2001.11a
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• pp.73-79
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• 2001

In this paper, shielding effectiveness(SE) of the shielding material of electromagnetic(EM) waves was investigated with actual experiments. The materials used in this study were made up of sputtering, film and powder of conductive materials - Cr, Al, Ag and Cu etc. Also, the polyester film was used as a base material. The experiment was carried out by using a shielding evaluator(Shielding box) TR17302 with an ADVANTEST spectrum analyzer, model R3361C. It was found from the experimental results that silver, copper, aluminum and chromium were good candidates as a shielding material against the EM waves with increasing the SE as the composite was laminated. The characteristics of the SE against the EM waves depended on a mode of preparation of specimen. The effects of density of particles on the SE were studied when the sputtering. The SE strongly depended on the electric resistance by density of sputtering and painting particles. SE increased as the density of particles was increasing.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.4
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• pp.625-630
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• 1987

Thermal evaporated SiO rf sputtered SiO2 thin films were most widely used to the gate oxide of TFTs. In this paper, the difference of trap density and distribution between SiO2 and SiO2 film were studied. TFTs using SiO and SiO2 thin film for the gate oxide were fabricated. The output characteirstics of TFTs and the time dpendencd of the leakage current were measured. Models of the carrier transport and carrier trapping in TFT were proposed. The trap density was obtained by substituting measured value for the equation derived from the proposed model. It was found that rf sputtered SiO2 had more traps at interface than thermal evaporated SiO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.250-254
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• 2000

High temperature superconducting films deposited on metal Ag wire were prepared with YBCO powders by electrophoretic deposition method. $I_2$was used as additives for surface charge of YBCO particles. When 2~3 wt.% $BaF_2$ was added in the YBCO suspension, the pores and cracks of film surface were decreased and film density could be increased. In case of YBCO films, the critical current density ($J_{c}$) was calculated at the value of $1458{\;}A/\textrm{cm}^2$ (77K, 0K) by 4 point prove method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.45-49
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• 2000

An ozone condenser by a selective adsorption on the silica gel surface is constructed. Ozone density is evaluated by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is found to be available to the density evaluation from dilute to highly condensed ozone. The highest ozone density condensed by the adsorption method is evaluated to be 97 mol%.