• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
• /
• pp.87-89
• /
• 1998

The Y2O3 films on Si(111) was grown by ionized cluster beam depposition (ICBD) in ultrahigh-vacuum (UHV). The acceleration voltage and oxygen ppartial ppressure were fixed at 5 kV and 2$\times$10-5 Torr resppectively. The substrate tempperature was varied from 10$0^{\circ}C$ to $600^{\circ}C$ in order to find the deppendence of crystallinity of Y2O3 films on the substrate tempperature. The crystallinity of the films with the substrate tempperature studied using x-ray diffraction (XRD) and Rutherford backscattering sppectroscoppy (RES). Surface crystallinity and surface morpphology of the films were also investigated using the reflection high-energy electron diffraction (RHEED) and atomic force microscoppe (AFM) resppectively. The films grown at the substrate tempperature below 50$0^{\circ}C$showed the ppoly-crystalline structure of oxygen deficiency. On the contrary the single-crystalline structure was obtained at the substrate tempperature over 50$0^{\circ}C$ and the stochimetry was gradually matched as increasing the substrate tempperature. The surface morpphology showed the increase of the surface roughness as the substrate tempperature was increased upp to 50$0^{\circ}C$ The crystallinity of the film was not good and the minimum channeling yield $\chi$min was measured at 0.91 The stochiometric and high crystallinine film (surface $\chi$min=0.25) was obtained as the substrate tempperature increased upp to 60 $0^{\circ}C$ which indicate the tempperature was sufficient to migrate the depposited atom.

• 한국재료학회지
• /
• 제29권6호
• /
• pp.385-391
• /
• 2019

In the present study, vanadium oxide($V_2O_5$) films for electrochromic(EC) application are fabricated using sol-gel spin coating method. In order to optimize the EC performance of the $V_2O_5$ films, we adjust the amounts of polyvinylpyrrolidone(PVP) added to the solution at 0, 5, 10, and 15 wt%. Due to the effect of added PVP on the $V_2O_5$ films, the obtained films show increases of film thickness and crystallinity. Compared to other samples, optimum weight percent(10 wt%) of PVP led to superior EC performance with transmittance modulation(45.43 %), responding speeds(6.0 s at colored state and 6.2 s at bleached state), and coloration efficiency($29.8cm^2/C$). This performance improvement can be mainly attributed to the enhanced electrical conductivity and electrochemical activity due to the increased crystallinity and thickness of the $V_2O_5$ films. Therefore, $V_2O_5$ films fabricated with optimized amount of PVP can be a promising EC material for high-performance EC devices.

• 한국잠사곤충학회지
• /
• 제37권2호
• /
• pp.142-153
• /
• 1995

특이한 분자 구조를 가진 생체 고분자로서 유용한 견 피브로인은 다양하게 성형 가공할 수 있으며 이를 위해서는 견 피브로인 수용액을 필요로 한다. 견 피브로인의 용해 조건이 형성되는 견 피브로인의 분말과 필름에 미치는 영향을 알아보기 위하여 종성염과 산가수분해법으로 견 피브로인을 용해시킨 수용액으로부터 견 피브로인 분말과 필름을 제조하고 이들의 특성을 아미노산 조정 분석, SEM, DSC, IR, X-ray Diffraction 등의 방법을 통하여 조사 분석한 결과는 다음과 같다. 1. 염화칼슘법과 염산법에 의해 피브로이을 용해시켰을 때 처리에 따라 아미노산 조성은 달랐으며 분자량도 차이가 있었다. 2. 분말의 구조 분석 결과, 염화칼슘법에 의한 처리에서 열분해 온도는 대조에 비해 낮게 나타났고 무정형의 분자 구조를 띄고 있음을 알 수 있었다. 염산 처리에 의한 잔유물은 대조보다 높은 온도에서 $\beta$구조에 의한 분해 거동을 보였으며 높은 결정화도를 나타냈다. 한편 염산에 용해된 부분은 열분해 분석 결과 a-helix에 의한 흡열 peak을 나타냈다. 3. 염화칼슘법에 의해 형성된 견 피브로인 필름은 모정형에 가까운 결정 구조를 가지고 있지만 불용화 처리에 의해 결정성이 향상됨에 따라 피브로인 필름의 흡습율은 감소하였으며, 열분해 온도가 증가했다.

• Composites Research
• /
• 제33권1호
• /
• pp.19-24
• /
• 2020

본 연구에서는 Poly(vinylidene fluoride) (PVDF) 필름 제작 과정 중 마이크로웨이브 처리 과정을 도입하여 β 결정성 향상에 어떠한 영향을 미치는지 분석하였다. 또한, 나노 입자 보강제로써 금속산화물인 TiO₂를 혼합하여 PVDF 복합재료 필름을 만들어, 전기적 음성도 차이로 인한 반데르발스 힘을 통해 β 결정 형성을 추가적으로 향상시키려고하였다. FTIR과 XRD 분석을통하여해당필름시편들에대해결정화도(Crystallinity) 및결정성(Crystalline)을 분석하였다. 이러한 분석 결과를 바탕으로, 용매 증발 과정 중 마이크로웨이브 처리 과정이 PVDF 필름의 결정화도를 높여주는 것을 확인하였고, 추가적인 연신(Stretching) 공정을 통해 α 결정에서 β 결정 변화(Crystalline phase change)가 발생함으로써 결과적으로 더 많은 β 결정성을 나타내었다. 그리고 금속산화물을 넣은 PVDF 복합재료 필름이 Neat PVDF 필름보다 상대적으로 더 높은 β 결정성을 나타내는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.291-291
• /
• 2010

The SBN ceramic thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at substrate temperature of 300[$^{\circ}C$]. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The crystallinity of SBN thin films were increased with increase of annealing temperature in the temperature range of 600~800[$^{\circ}C$]. the surface rougness showed about 20 [nm].

• 한국전기전자재료학회논문지
• /
• 제11권10호
• /
• pp.809-814
• /
• 1998

In this study, the metastable state diamond thin films have been deposited on Si substrates from methand-hydrogen and oxygen mixture usin gMicrowave Plasma Enhanced Chemical Vapor Deposition (MWPCVD) method. effects experimental parameters MWPCVD including methan concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)∼5%(5sccm). oxygen concentration of 0∼80%(2.4sccm). operating pressure of 30Torr∼ 70Torr, deposition time of 1∼32hr. SEM, WRD, and Raman spectroscopy were employed to analyse the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non=diamond phases respectively.

• Transactions on Electrical and Electronic Materials
• /
• 제6권2호
• /
• pp.57-62
• /
• 2005

Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using lEE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2003년도 추계학술발표회초록집
• /
• pp.58-58
• /
• 2003

Silver doped ZnO (SZO) films were prepared by rf magnetron sputtering on glass substrates with extraordinary designed ZnO target. With the doping source for target, use AgNO$_3$ powder on a various rate (0, 2, and 4 wt.%). We investigated dependence of coating parameter such as dopant content in target and substrate temperature in the SZO films. The SZO films have a preferred orientation in the (002) direction. As amounts of the Ag dopant in the target were increased, the crystallinity and the transmittance and optical band gap were decreased. And the substrate temperature were increased, the crystallinity and the transmittance were increased. But the crystallinity and the transmittance of SZO films were retrograde at 200$^{\circ}C$. Upside facts were related with composition. In addition, the Oxygen K-edge features of the SZO films were investigated by using near edge X-ray absorption fine structure (NEXAFS) spectroscopy. Changes of optical band gap of the SZO films were explained compared with XRD, XPS and NEXAFS spectra.

• Macromolecular Research
• /
• 제9권4호
• /
• pp.210-219
• /
• 2001

Quenched and slow cooled as well as isothermally crystallized poly(tetramethylene succinate)(PTMS) films at two different temperatures were prepared. In the process of hydrolysis of the four specimens, structural changes such as the crystallinity, crystal size distribution, lattice parameter, lamellar thickness, long period and surface morphology were investigated by using wide and small angle X-ray scattering (WAXS and SAXS), differential scanning calorimetry (DSC) and scanning electron microscopy (SEM). The hydrolytic degradation of quenched film was faster than that of slow cooled and isothermally crystallized films. The film crystallized at 100$\^{C}$ exhibited extensive micro voids and thus showed faster degradation than that crystallized at 75$\^{C}$, demonstrating surface morphology is another important factor to govern degradation rate. The crystallinity of the specimen increased by 5-10% and long period decreased after hydrolysis for 20 days. At the initial stage of degradation, the lamellar thickness of quenched film rather increased, while that of slow cooled and isothermally crystallized films decreased. The hydrolytic degradation preferentially occurred in the amorphous region. The hydrolytic degradation in crystal lamellae are mainly at the crystal surfaces.

• 한국세라믹학회지
• /
• 제40권4호
• /
• pp.398-400
• /
• 2003

The YMnO$_3$ thin films were prepared on platinized-silicon substrates by chemical solution deposition and annealed at 750 to 85$0^{\circ}C$ for 1 h under various oxygen pressures, from 2 mTorr to 760 Torr. Effects of annealing oxygen pressures on the crystallization behavior and electrical properties of YMnO$_3$ thin films were investigated. Crystallinity and c-axis preferred orientation of YMnO$_3$ thin film were improved by decreasing the oxygen pressure but were deteriorated at extremely low oxygen pressure, 2 mTorr. Leakage current density of the YMn03 thin film decreased as the oxygen pressure decreased. The film annealed at 80$0^{\circ}C$ under 2 Torr, which had the best crystallinity and the highest c-axis preferred orientation. showed the best-developed ferroelectric C-V hysteresis.