• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.18 no.2
• /
• pp.87-90
• /
• 2008

Co-Pt alloy thin films were galvanostatically electrodeposited on Ru (30 nm)/Ta (5 nm)/Si (100) substrates from a amino-citrate based electrolyte. We used Ru(0002)-oriented buffer layers to control the crystallinity and orientation of the Co-Pt alloy thin films. The effect of solution temperature on the microstructure and magnetic properties of the Co-Pt alloy thin film was investigated. The samples were characterized by EDS, FESEM, XRD diffractometer using Cu $K{\alpha}$ radiation. The magnetic properties of these films were analyzed by a VSM and torque magnetometer. The Co-Pt alloy thin films were exhibited very high out-of-plane coercivity and squareness of the multilayer were 6527 Oe and 0.93, respectively, without heat treatment.

• Proceedings of the KIEE Conference
• /
• 2001.07e
• /
• pp.35-39
• /
• 2001

The purpose of this paper is improvement the piezoelectric of Polyvinylidene fluoride(PVDF) organic thin films is fabricated by vapor deposition method. The piezoelectric of PVDF organic thin films attributed to dipole orientation in crystalline region. Also, the piezoelectric characteristic reduced that dipole moments orientation in crystalline region interfered with impurity carriers. Therefore, PVDF organic thin films fabricated with high substrate temperature condition for crystallinity improvement. The crystallinity of PVDF organic thin films fabricated by this condition increase from 47 to 67.8%. The ion density of PVDF organic thin films fabricated by substrate temperature variation from $30^{\circ}C$ to $105^{\circ}C$ decreased from $1.62{\times}10^{16}cm^3$ to $6.75{\times}10^{11}cm^3$ when temperature and frequency were $100^{\circ}C$, 10Hz, respectively. The $d_{33}$ and piezo-voltage coefficient of PVDF organic thin films increased from 20pPC/N to 33pC/N and $162.9{\times}10^{-3}V{\cdot}m/N$ to $283.2{\times}10^{-3}V{\cdot}m/N$, respectively. For the sake of the applications of piezoelectric sensor, we analyzed the output voltage characteristic as a function of the distance between an oscillator of 28kHz and PVDF organic thin film transducer. From this, we found that the output voltage is inversely proportional to the distance. At this time, the period was about $35.798{\mu}s$ and equal the oscillator frequency.

• Korean Journal of Materials Research
• /
• v.29 no.2
• /
• pp.73-78
• /
• 2019

Lead free $(Ba_{0.7}Ca_{0.3})TiO_3$ thick films with nano-sized grains are prepared using an aerosol deposition (AD) method at room temperature. The crystallinity of the AD thick films is enhanced by a post annealing process. Contrary to the sharp phase transition of bulk ceramics that has been reported, AD films show broad phase transition behaviors due to the nano-sized grains. The polarization-electric hysteresis loop of annealed AD film shows ferroelectric behaviors. With an increase in annealing temperature, the saturation polarization increases because of an increase in crystallinity. However, the remnant polarization and cohesive field are not affected by the annealing temperature. BCT AD thick films annealed at $700^{\circ}C/2h$ have an energy density of $1.84J/cm^3$ and a charge-discharge efficiency of 69.9 %, which is much higher than those of bulk ceramic with the same composition. The higher energy storage properties are likely due to the increase in the breakdown field from a large number of grain boundaries of nano-sized grains.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.3
• /
• pp.407-410
• /
• 1998

The characteristics of $(Ba,Sr)TiO_3$[BST] thin films with the variation of $O_2/Ar$ ratio in sputtering gas deposited on $RuO_2$ bottom electrode were investigated. Dielectric constant of BST film increases from 135 to 190 with increasing oxygen partial pressure from 10 to 50, which is mainly due to the improved crystallinity of BST film. The instability of $RuO_2$ surface in $BST/RuO_2$ interface and the increase in the surface roughness of BST thin films with higher $O_2/Ar$ ratio appeared to play an important roles on the degradation of the leakage current characteristics of $Al/BST/RuO_2$ capacitor with various $O_2/Ar$ ratio in sputtering gas. As a consequence, the leakage current of BST thin film showed the lowest value of $1.9{\times}10^{-7}\; A/{\textrm}{cm}^2$ at $O_2/Ar{\approx}1/9$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.212-212
• /
• 2009

Thermoelectric devices were used to wide range of application. At present, increasing the efficiency of these devices, in particular, through the preparation of materials showing a high thermoelectric figure of merit, Z, $Bi_2Te_3$ and $Sb_2Te_3$ thin films on Si substrates are deposited by flash evaporation method for thermopile sensor applications. In order to enhance the thermoelectric properties of the thin film, annealing in high vacuum is carried out in the temperature range from 200 to $350^{\circ}C$. The microstructure of the film is investigated by XRD and SEM. The resistivity and Seebeck coefficient of the films are measured by Van der Pauw method and hot probe method respectively. At elevating annealing temperature, the crystallinity and thermoelectrical properties of films are improved by increasing the size of grains. At excessive high annealing temperatures, it is shown that Seebeck coefficient of films is decreased because of Te evaporation. By optimizing the annealing conditions, it is possible to obtain a high performance thin film with a thermoelectric properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.191-191
• /
• 2009

$Bi_4Ti_3O_{12}$ (BiT) thin films were well developed on the Pt/Ti/$SiO_2/Si$ substrate by a metal organic decomposition (MOD) method. Oxygen was effective on the crystallization of the BiT thin films during a rapid thermal annealing process. The electrical properties of the BiT films dependant on the oxygen partial pressure were investigated. No crystalline phase was observed for the BiT film annealed at $700^{\circ}C$ under oxygen free atmosphere. However, its crystallinity was significantly evolutionned with increasing oxygen partial pressure. In addition, its dielectric and piezoelectric properties were enhanced with increasing oxygen partial pressure to 10 torr. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current and piezoelectric constant ($d_{33}$) was also considerably improved, being as 0.62 nA/$cm^2$ at 1 V and approximately 51 pm/V, respectively.

• Journal of Surface Science and Engineering
• /
• v.33 no.2
• /
• pp.77-86
• /
• 2000

In this study effects of La starting compounds and substrates on the densification of (P $b_{0.92}$L $a_{0.05}$)Ti $O_3$ thin films were investigated. After the heat treatment on platinized silicon at $650^{\circ}C$ for 30min thickness of PLT(i) thin films (from La-isopropoxide) shrank by 27%, while 33% reduction occurred for PLT (a) thin films (from La-acetate). These PLT(i) films showed less densified surface microstructure compared to the PLT (a) . Lower shrinkage of the films on platinized silicon than on bare silicon (41% and 40% for PLT (i) and PLT (a) respectively) is attributed to the earlier development of crystallinity in the film, which arrests film densification. In order to maximize sintering before crystallization, heat treatment at $400^{\circ}C$ for 3 hours followed by $650^{\circ}C$ for 30 min was attempted. This method increased the shrinkage of the PLT (i) and PLT (a) films two times and 1.5 times as much as that observed for the films heat treated at $650^{\circ}C$ for 30min, respectively. FTIR results indicated that first pyrolysis in the film is associated with the burning of acetate ligands. Condensation reaction between OHs was found to occur preferentially between $350^{\circ}C$ and $450^{\circ}C$, whereas majority of polycondensation between ROH-OH appears to occur until $300^{\circ}C$ and be completed below $450^{\circ}C$.EX>.

• Journal of the Korean Vacuum Society
• /
• v.22 no.5
• /
• pp.257-261
• /
• 2013

We have studied structural, optical, and electrical properties of the Al-doped ZnO (AZO) thin films using RF magnetron sputtering with various working pressure. To find optimal properties of AZO for transparent conducting oxides, the working pressure in sputtering process was varied as 0.07 Torr, 0.02 Torr, and 0.007 Torr, respectively. As working pressure increased, the crystallinity of AZO thin film was improved, the surface roughness of AZO thin film decreased. The transmittance of the film was over 80% in the visible light range regardless of the changes in working pressure. In case of 0.007 Torr, best electrical properties was shown due to the reduction of oxygen absorption by decreasing surface roughness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.7
• /
• pp.452-457
• /
• 2014

Copper manganite thin films were fabricated on $SiN_x/Si$ substrate by metal organic decomposition (MOD) process. They were burned-out at $400^{\circ}C$ and annealed at various temperatures ($400{\sim}800^{\circ}C$) for 1h in ambient atmosphere. Their micro-structure and negative temperature coefficient of resistance (NTCR) characteristics were analyzed for micro-bolometer application. The copper manganite film with a cubic spinel structure was well developed at $500^{\circ}C$ which confirmed by XRD and HRTEM analysis. It showed a low resistivity ($47.5{\Omega}{\cdot}cm$) at room temperature and high NTCR characteristics of $-4.12%/^{\circ}C$ and $-2.15%/^{\circ}C$ at room temperature and $85^{\circ}C$, implying a good thin film for micro-bolometer application. Furthermore, its crystallinity was enhanced with increasing temperature to $600^{\circ}C$. However, the appearance of secondary phase at temperatures higher than $600^{\circ}C$ lead to deteriorate the NTCR characteristics.

• Current Photovoltaic Research
• /
• v.3 no.2
• /
• pp.39-44
• /
• 2015

$Cu(In,Ga)_3Se_5$ (${\beta}-CIGS$) has a band gap of 1.35 eV which is an optimum value for high solar-energy conversion efficiency. However, ${\beta}-CIGS$ film was not well characterized yet due to lower efficiency compared to $Cu(In,Ga)Se_2$ (${\alpha}-CIGS$). In this work, ${\beta}-CIGS$ films were fabricated by a three-stage co-evaporation of elemental sources with various Se fluxes. As the Se flux increased, the crystallinity of ${\beta}-CIGS$ phase was improved from the analysis of Raman spectroscopy and a deep-level defect was reduced from the analysis of photoluminescence spectroscopy. A Se treatment of the ${\beta}-CIGS$ film at $200^{\circ}C$ increased Ga content and decreased Cu content at the surface of the film. With the Se treatment at $200^{\circ}C$, the cell efficiency was greatly improved for the CIGS films prepared with low Se flux due to the increase of short-circuit current and fill factor. It was found that the main reason of performance improvement was lower Cu content at the surface instead of higher Ga content.