• Korean Journal of Materials Research
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• v.26 no.8
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• pp.427-429
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• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.474-479
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• 1993

Submicron contact hole filling with aluminum alloys has been achieved with a multistep metallization method, which utilizes a metal " flow" or self-diffusion process at elevated temperatures after the metal was sputter-deposited. A multi-chamber, modular sputtering system was employed to deposit aluminum alloys and subsequently to anneal the deposited metal films under vacuum at high temperatures. The film were deposited on 200 mm wafers with planar, dc magnetron sputtering sources without anysubstrate bias. The basic process steps studied for the multistep metallization include an initial layer deposition at low temperatures less than $100^{\circ}C$, and an annealin gstep at elevated temperatures, between 450 and $550^{\circ}C$. The degree of planarization or step coverage was dependent strongly upon the temperature and time of the flow step and complete filling of the submicron contacts with aluminum alloys was achieved. Responsible mechanisms for the enhancement in step coverge and factros determining uniform and reproducible flow of aluminum alloys during the high temperauture step are discussed.discussed.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.37-42
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• 2007

Copper deposition studies have been actively studied since interests on 3D SiP were increased. The defects inside via can be easily formed due to the current density differences on entrance, bottom and wall of via. So far many different additives and current types were discussed and optimized to obtain void-free copper via filling. In this research acid cupric sulfate plating bath containing additives such as PEG, SPS, JGB, PEI and wave current applied electroplating were examined. The size and shape of grain were influenced by the types of organic additives. The cross section of specimen were analyzed by FESEM. When PEI was added, the denser copper deposits were obtained. Electroplaing time was reduced when 2 step via filling was employed.

• Journal of the Korean Geotechnical Society
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• v.16 no.1
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• pp.167-178
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• 2000

An experimental study on step up filling method is carried out to reinforce the Yano method which is widely used to estimate volume ratio and self-weight consolidation settlement in reclamation area. This method considers actual reclamation construction in which dredged clay is continuously filled and rising of deposit height is presented as a result of volume decrease by height rising and self-weight consolidation. It measured the relationship between filling velocity and deposit rising velocity; calculated the total filling height which is needed to achieve the planned final deposit height, and its solid height and the time which is taken to finish the planned final deposit height; and on the basis of these calculated parameters, predicted the self-weight consolidation and volume change ratio in reclamation construction. Yano method is also used to predict the same conditions. 29.8% in self-weight consolidation, 31.1% in volume ratio, 40% in void ratio and water content is underestimated in Yano method compared to step up filling method.

• Journal of Korea Foundry Society
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• v.22 no.6
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• pp.299-303
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• 2002

수정된 SIMPLE법과 VOF의 결합으로 predictor-two step corrector-VOF라고 불리는 새로운 알고리즘이 주조 시 용탕 충전과정을 해석하기 위해 개발되었다. 운동량보존으로부터 유도된 새 2단계 속도 경계조건 처리법은 용탕의 자유표면을 추적하는 데 사용되었다. 본 연구에서는 2개의 예제 계산을 통해 계산정확도와 속도에 대한 Courant 수의 영향을 살펴보았다. 그 결과 적당한 Courant 수의 증가는 계산 정확도의 감소 없이 용탕 계산 속도를 향상시킬 수 있는 것으로 나타났다. 또한 만족할 만한 계산 정확도와 효율이 이 알고리즘의 실제 제품 해석을 통해 얻어졌다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.231-231
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• 2010

현재 Cu배선 제조공정에서 전해도금은 Damascene pattern의 Cu filling에 사용되고 있는데, 우수한 특성의 전해도금을 위해서는 step coverage가 우수한 Cu seed layer가 필수적이다. 현재까지 Cu seed layer를 형성하는 방법으로는 ionized physical vapor deposition(I-PVD)이 사용되고 있는데, 22 nm 이후의 소자에서는 step coverage의 한계로 인해 완벽한 Cu filling 어려울 것으로 예상된다. 본 연구에서는 step coverage가 매우 우수한 atomic layer deposition(ALD) 방법으로 Cu seed layer를 증착하고 그 특성을 기존의 PVD 박막과 비교하였다. Ketoiminate 계열의 +2가 Cu 전구체와 $H_2$를 이용하여 ALD Cu 박막을 증착하였는데 exposure, 기판의 온도를 변화시키면서 기판별로 ALD Cu의 최적공정조건을 도출하였다. ALD Cu seed와 PVD Cu seed 위에 약 $1{\mu}m$의 Cu 박막을 전해도금한 후 박막의 두께, 비저항, 미세구조와 함께 pattern filling 특성을 비교하였다.

• Membrane Journal
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• v.21 no.3
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• pp.263-269
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• 2011

In the operation of submerged membrane-coupled sequencing batch reactor, the effect of filling step on the removal efficiency and filtration performance were investigated. Two sets of operation modes, the filling step located in the beginning of aerobic step (Mode-1) and the beginning of anoxic step (Mode-2), during 89 days were conducted. There was no wide difference in the COD removal and filtration performance between two sets of operation modes. But in the removal efficiency of nutrients (total nitrogen and total phosphorous), Mode-2 was more effective than Mode-1. In the case of Mode-2, average removal efficiencies of COD, total nitrogen, and total phosphorous were 99.1, 73.3, and 77.3%, respectively.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.11a
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• pp.767-770
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• 2000

In order to reduce lean-time and cost, recently the technology of Rapid Prototyping and Manufacturing(PR/M) has been used widely. So various RP/M methods have been developed and these systems commercialized several years ago. The machining process is one of these methods. It also offers advantages such as precision and versatility. But there are some considerations during machining. The most important problem among them is the fixturing. So we have to overcome the limitation because the fixturing time is depend on the complexity of geometry to be machined. In this paper, we have developed the fixturing technique using filling process that can be widely useful for rapid products within a short time. So we have carried out some kinds of rapid products such as plastic knob and metal fan using our fixturing process. In fixturing step, the filling material might chosen a resin or a alloy according to wether the work material is plastic or metal respectively. Also we developed the set-up equipment attachable on the table of the milling machine that provided practicable quality during a series of machining operations, named by two step milling process.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.22 no.1
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• pp.104-112
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• 1998

The mold filling process has been a central issue in the development of numerical methods to solve the casting processes. A mold filling which is inherently transient free surface fluid flow, is important because the quality of casting highly depends on such phenomenon, Most of the existing numerical schemes to solve mold filling process have severe limitations in time step restrictions or Courant criteria since explicit time integration is used. Therefore, a large computation time is required to analyze casting processes. In this study, the well known SOLA-VOF method has been modified implicitly to simulate the mold filling process. Solutions to example filling problems show that the proposed method is more efficient in computation time than the original SOLA -VOF method.

• Korean Journal of Metals and Materials
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• v.50 no.2
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• pp.152-158
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• 2012

The effect of current waveform on Cu filling into TSV (through-silicon via) and the bottom-up ratio of Cu were investigated for three dimensional (3D) Si chip stacking. The TSV was prepared on an Si wafer by DRIE (deep reactive ion etching); and its diameter and depth were 30 and $60{\mu}m$, respectively. $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. The current waveform was varied like a pulse, PPR (periodic pulse reverse) and 3-step PPR. As experimental results, the bottom-up ratio by the pulsed current decreased with increasing current density, and showed a value of 0.38 on average. The bottom-up ratio by the PPR current showed a value of 1.4 at a current density of $-5.85mA/cm^2$, and a value of 0.91 on average. The bottom-up ratio by the 3-step PPR current increased from 1.73 to 5.88 with time. The Cu filling by the 3-step PPR demonstrated a typical bottom-up filling, and gave a sound filling in a short time.