Optimization of 4H-SiC Superjunction Accumulation MOSFETs by Adjustment of the Thickness and Doping Level of the p-Pillar Region (p-Pillar 영역의 두께와 농도에 따른 4H-SiC 기반 Superjunction Accumulation MOSFET 소자 구조의 최적화)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.30 no.6
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- pp.345-348
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- 2017