• Journal of the Korean Society for Precision Engineering
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• v.17 no.4
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• pp.240-246
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• 2000

An in-process estimation of the ground surface roughness is a bottle-neck and an essential field in conventional grinding operation. We defined the dimensionless average roughness factor (D.A.R.F) that exhibits a roughness characteristics of ground surface. The D.A.R.F was composed easily of the absolute average and the standard deviation values which were the analytic parameters of the acoustic emission (AE) signal generated during the machining process. The theoretical equation between the surface roughness and the D.A.R.F has been derived from the linear regressive analysis and verified its availability through the experimentation on the surface grinding machine.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.70-76
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• 2011

High-quality double-walled carbon nanotubes (DWCNTs) were synthesized by catalytic decomposition method at $800^{\circ}C$ using Tetrahydrofuran. The as-synthesized DWCNTs typically have catalytic impurities and amorphous carbon, which were removed by two-step purification process, consisting of thermal oxidation and H2O2, HNO3, HCl treatment. The DWCNT suspension was prepared by dispersing the purified DWCNTs in an aqueous sodium dodecylbenzenesulfonate solution with horn-type sonication. This was then sprayed on ITO glass to fabricate CNT field emitters. The quality of purified DWCNTs was estimated with X-ray diffraction and Thermal Gravity Analysis. The field emission properties were improved by increasing the process time of HCl treatment.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.333-337
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• 2003

We report a new fabrication process for carbon nanotube field emitters with high performance. The key of the fabrication process is trim-and-leveling the carbon nanotubes grown in trench structures by employing a planarization process, which leads to a uniform distance from the carbon nanotube tip to the electrode. In order to enable this processing, spin-on-glass liquid is applied over the CNTs grown in trench to have them stubborn adhesion among themselves as well as to the substrate. Thus fabricated emitters reveal an extremely stable emission and aging characteristics with a large current density of 40 ㎃/$\textrm{cm}^2$ at 4.5 V/$\mu\textrm{m}$. The field enhancement factor calculated from the F-N plot is $1.83${\times}$10^{5}$ $cm^{－1}$ , which is a very high value and indicates a superior quality of the emitter originating from the nature of open-tip and high stability of the carbon nanotubes obtained new process.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.44-50
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• 1993

In an attempt to improve the electrical characteristics of tantalum pentoxide dielectric film, silicon substrate was reacted with a nitrogen plasma to form a silicon nitride of 50.angs. and then tantalum pentoxide thin films were formed by reactive sputtering in the same chamber. Breakdown field and leakage current density were measured to be 2.9 MV/cm and 9${\times}10^{8}\;A/cm^{2}$ respectively in these films whose thickness was about 180.angs.. With annealing at rectangular waveguides with a slant grid are investigated here. In particular, 900.deg. C in oxygen ambient for 100 minutes, breakdown field and leakage current density were improved to be 4.8 MV/cm and 1.61.6${\times}10^{8}\;A/cm^{2}$ respectively. It turned out that the electrical characteristics could also be improved by oxygen plasma post-treatment and the conduction mechanism at high electric field proved to be Schottky emission in these double-layered films.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.9
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• pp.1060-1070
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• 1992

In this paper, characteristics of Acoustic Emission in Low Density Polyethylene were studied from tree initiation to breakdown under long-term inhomogeneous alternative electrical field. The voltage levels used were 9, 11 and 14[kV]. Especially, a newly developed automatic measuring system was used to measure time variations of AE average amplitude, AE pulse number, AE pulse distribution patterns due to polarities. The patterns wer specially the variated patterns, when tree propagated. Also, parameters for dielectric breakdown prediction, which were suggested by Okamoto, were calculated. The result was analysed by tree shapes and partial discharge activities in tree due to tree initiation and propagation.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.285-289
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• 2015

We prepared silver Schottky contacts to O-polar and nonpolar m-plane bulk ZnO wafers. Then, by considering various transport models, we performed a comparative analysis of the current transport properties of Ag/bulk ZnO Schottky diodes, which were measured at 300, 200, and 100 K. The fitting of the forward bias current-voltage (I-V) characteristics revealed that the tunneling current is dominant as the transport component in both the samples. Compared to thermionic emission (TE), a stronger contribution of tunneling current was observed at low temperature. The reverse bias I-V characteristics were well fitted with the thermionic field emission (TFE) in both the samples. The presence of acceptor-like adsorbates, such as O₂ and H₂O, modulated the surface conductive state of ZnO, thereby affecting the tunneling effect. The degree of activation/passivation of acceptor-like adsorbates might be different in both the samples owing to their different surface morphologies and surface defects (e.g., oxygen vacancies).

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.855-858
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• 2003

Carbon nanotubes (CNTs) were grown on Ni-coated TiN/Si substrate by microwave plasma chemical vapor deposition using mixture gas of $H_2/CH_4$ at low temperature of 500 $^{\circ}C$. Average diameter of CNTs could be easily controlled by $H_2$ plasma pretreatment time before CNTs growth. The turn-on voltages of CNT emitters were varied from 3.5 $V/{\mu}m$ to 9 $V/{\mu}m$ according to the hydrogen pretreatment conditions. The close relationship between electron emission characteristics and pretreatment time indicates that pretreatment condition can be a key process parameter in CNTs growth for field emission displays..

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.776-780
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• 2000

ZnGa$_2$O$_4$thin films were prepared on Si(100) wafer in terms of RF power, substrate temperatures and Ar/O$_2$flow rate by RF Magnetron Sputtering. Photoluminescence(PL) measurement was employed to observe the emission spectra of ZnGa$_2$O$_4$films. The influences of various deposition parameters on the properties of grown films were studied. The optimum substrate deposition temperature for luminous characteristics was about 50$0^{\circ}C$ in this investigation. PL spectrum of ZnGa$_2$O$_4$ thin films showed broad band luminescence spectrum.

• Transactions of the Korean Society of Automotive Engineers
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• v.12 no.6
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• pp.80-89
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• 2004

In order to confront the increasing air pollution and the tightening emission restrictions, this research developed a diesel engine using DME, the advanced smoke-free alternative fuel. By numerical analysis, flow field, spray, and combustion phenomenon of the DME engine was presented. Using an experimental method, the configuration of the fuel supply system and operation/power performance was tested with the current plunger pump. Most emission performance, especially smoke performance was significantly improved. The possibility of conversion from the current diesel engine into the DME engine was affirmed in this research. However, it was found that the increase of engine RPM and fuel amount need to be properly adjusted through matching the characteristics of fuel and injector for further improvement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.918-923
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• 1998

Poly-silicon thin film transistors were fabricated on quartz substrates by high temperature processes. Electrical characteristics were measured and compared for 3 transistor structures of Standard Inverted Gate(SIG), Lightly Doped Drain(LDD), and Dual Gate(DG). Leakage currents of DG and LDD TFT's were smaller that od SIG transistor, while ON-current of LDD transistor is much smaller than that of SIG and DG transistors. Temperature dependence of the leakage currents showed that SIG and DG TFT's had thermal generation current at small drian bias and Frenkel-Poole emission current at hight gate and drain biases, respectively. In case of LDD transistor, thermal generation was the dominant mechanism of leakage current at all bias conditions. It was found that the leakage current was closely related to the reduction of the electric field in the drain depletion region.