• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.624-627
• /
• 2003

The BLT thin-films were one of the promising ferroelectric materials with a good leakage current and degradation behavior on Pt electrode. The BLT target was sintered at $1100^{\circ}C$ for 4 hours at the air ambient. $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin-film deposited on $Pt/Ti/SIO_2/Si$ wafer by rf magnetron sputtering method. At annealed $700^{\circ}C$, (117) and (006) peaks appeared the high intensity. The hysteresis loop of the BLT thin films showed that the remanent polarization ($2Pr=Pr^+-Pr^-$) was $16uC/cm^2$ and leakage current density was $1.8{\times}10^{-9}A/cm^2$ at 50 kV/cm with coersive electric field when BLT thin-films were annealed at $700^{\circ}C$. Also, the thin film showed fatigue property at least up to $10^{10}$ switching bipolar pulse cycles under 7 V. Therefore, we induce access to optimum fabrication condition of memory device application by rf-magnetron sputtering method in this report.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.179-182
• /
• 2004

The $p-CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the Photoluminescence spectra of the as-grown $CdIn_2Te_4$ crystal and the various heat-treated crystals, the $(D^{o},X)$ emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_2Te_4:Cd$, while the $(A^{o},X)$ emission completely disappeared in the $CdIn_2Te_4:Cd$. However, the $(A^{o},X)$ emission in the photoluminescence spectrum of the $CdIn_2Te_4:Te$ was the dominant intensity like an as-grown $p-CdIn_2Te_4$ crystal. These results indicated that the $(D^{o},X)$ is associated with $V_{Te}$ acted as donor and that the $(A^{o},X)$ emission is related to $V_{Cd}$ acted as acceptor, respectively. The $p-CdIn_2Te_4$ crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of $(D^{o},\;A^{o})$ emission and its TO Phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and accepters such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_2Te_4$ was confirmed not to form the native defects because it existed in the stable form of bonds.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.424-424
• /
• 2008

Dye-sensitized Solar Cell (DSC) is a new type of solar cell by using photocatalytic properties of $TiO_2$. The electric potential distribution in DSCs has played a major role in the operation of such cells. Models based on a built-in electric field which sets the upper limit for the open circuit voltage(Voc) and/or the possibility of a Schottky barrier at the interface between the mesoporous wide band gap semiconductor and the transparent conducting substrate have been presented. $TiO_2$ thin films were deposited on the FTO substrate by Nd:YAG Pulsed Laser Deposition(PLD) at room temperature and post-deposition annealing at $500^{\circ}C$ in flowing $O_2$ atmosphere for 1 hour. The structural properties of $TiO_2$ thin films have investigated by X-ray diffraction(XRD) and atomic force microscope(AFM). Thickness of $TiO_2$ thin films were controlled deference deposition time and measurement by scanning electron microscope(SEM). Then we manufactured a DSC unit cells and I-V and efficiency were tested using solar simulator.

• Asian Pacific Journal of Cancer Prevention
• /
• 제16권17호
• /
• pp.7409-7414
• /
• 2015

Loop-mediated isothermal amplification (LAMP) developed by Notomi et al. (2000) has made it possible to amplify DNA with high specificity, efficiency and rapidity under isothermal conditions. The ultimate products of LAMP are stem-loop structures with several inverted repeats of the target sequence and cauliflower-like patterns with multiple loops shaped by annealing between every other inverted repeats of the amplified target in the similar strand. Because the amplification process in LAMP is achieved by using four to six distinct primers, it is expected to amplify the target region with high selectivity. However, evaluation of reaction accuracy or quantitative inspection make it necessary to append other procedures to scrutinize the amplified products. Hitherto, various techniques such as turbidity assessment in the reaction vessel, post-reaction agarose gel electrophoresis, use of intercalating fluorescent dyes, real-time turbidimetry, addition of cationic polymers to the reaction mixture, polyacrylamide gel-based microchambers, lateral flow dipsticks, fluorescence resonance energy transfer (FRET), enzyme-linked immunosorbent assays and nanoparticle-based colorimetric tests have been utilized for this purpose. In this paper, we reviewed the best-known techniques for evaluation of LAMP amplicons and their applications in molecular biology beside their advantages and deficiencies. Regarding the properties of each technique, the development of innovative prompt, cost-effective and precise molecular detection methods for application in the broad field of cancer research may be feasible.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제13권6호
• /
• pp.581-588
• /
• 2013

This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.

• 대한수의학회지
• /
• 제38권3호
• /
• pp.565-573
• /
• 1998

To study the specific tools for the diagnosis of Newcastle disease virus (NDV) in chicken, polymerase chain reaction (PCR) and its presumable conditions were evaluated for the detection of hemagglutinin-neuraminidase (HN) gene of NDV RNA. For these purposes, Kyojeongwon strain of the NDV was propagated in allantoic cavity of SPF embryonating chicken eggs, and viral RNA was extracted from fractionated virus after the allantoic fluids were ultracentrifuged with sucrose gradient. The first-strand cDNA was then made for the HN gene of NDV RNA by reverse transcription at $42^{\circ}C$ for 1 hour using specific primer complementary to the HN gene. The single-stranded cDNA was used as template in the PCR of the HN-DNA, and various conditions of the PCR were evaluated to set up method for the specific detection of the HN-DNA. The PCR conditions promising for the detection of HN gene consist of preheating at $94^{\circ}C$, 5 min, 30 cycles of denaturation at $94^{\circ}C$, 1 min, annealing at $55^{\circ}C$, 1 min and polymerization at $72^{\circ}C$, 2 min, and a cycle of extension at $72^{\circ}C$, 5 min. when NDVs of allantoic fluids without fractionation were applied to the above PCR condition, the HN genes were detected effectively not only from Kyojeongwon but from other velogenic strains such as Herts and a field isolate.

• 한국전기전자재료학회논문지
• /
• 제33권2호
• /
• pp.147-150
• /
• 2020

Relatively pure YBCO was first synthesized by heating a mixture of metal carbonates at temperatures between 1,000 and 1,300 K, resulting in the reaction: 4BaCO₃+Y₂(CO₃)₃+6CuCO₃+(1/2_-x)O₂ → 2YBa₂Cu₃O_7-x+1/3CO₂. Modern syntheses of YBCO use the corresponding oxides and nitrates. The superconducting properties of YBa₂Cu₃O_7-x are sensitive to the value of x, i.e., its oxygen content. Only those materials with 0≤x≤0.65 are superconducting below Tc, and when x ~ 0.07, the material superconducts at the highest temperature, i.e., 95 K, or in the highest magnetic fields, i.e., 120 T and 250 T when B is perpendicular and parallel to the CuO₂ planes, respectively. In addition to being sensitive to the stoichiometry of oxygen, the properties of YBCO are influenced by the crystallization methods applied. YBCO is a crystalline material, and the best superconductive properties are obtained when crystal grain boundaries are aligned by careful control of annealing and quenching temperature rates. However, these alternative methods still require careful sintering to produce a quality product. New possibilities have arisen since the discovery of trifluoroacetic acid, a source of fluorine that prevents the formation of undesired barium carbonate (BaCO₃). This route lowers the temperature necessary to obtain the correct phase at around 700℃. This, together with the lack of dependence on vacuum, makes this method a very promising way to achieve a scalable YBCO bulk.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.218.2-218.2
• /
• 2014

그래핀은 높은 전기 전도도와 열전도도, 기계적 강도를 가지고 있고 동시에 높은 전자이동도($200,000cm^2{\cdot}V{\cdot}^1{\cdot}s{\cdot}^1$) 특성을 갖는 물질로써 차세대 소재로 각광받고 있다. 하지만 그래핀을 소자에 응용하기 위해서는 전사공정과 lithography 공정 과정에서 발생되는 PMMA(Poly methyl methacrylate) residue를 완벽하게 제거해야 하는 문제점이 있다. 특히, lithography 공정 중 완벽하게 PMMA residue 가 제거되지 않고 잔류해 있을 경우에 소자의 life time, performance에 악영향을 준다는 보고가 있다. 이와같은 문제를 해결하기 위해 화학적 cleaning, 열처리를 통한 cleaning, 전류 인가에 의한 cleaning과 같은 방법들을 이용하여 그래핀의 PMMA residue를 제거하는 공정들이 보고되고 있지만, 화학적 cleaning 방법의 경우 chloroform 이라는 독성물질 사용으로 인해 산업적으로 응용이 어렵고, 열처리 방법은 전극 등의 금속이 $200^{\circ}C$ 이상의 높은 온도에서 장시간 노출될 경우 쉽게 손상을 입으며, 전류 인가에 의한 cleaning 방법은 국부적으로만 효과를 볼 수 있기 때문에 lithography 공정 후 PMMA residue를 효과적으로 제거하기에는 한계를 보이고 있다. 본 연구에서는 Ar을 이용하는 Ion beam 시스템을 통해 beam energy를 제어함으로써 PMMA residue를 효과적으로 제거하는 연구를 진행하였다. 최적화된 플라즈마 발생 조건을 찾기 위해 QMS(Quadrupole Mass Spectrometer)를 이용하여 입사하는 ion energy와 flux 양을 컨트롤 하였고, 250 W에서 최적화된 ion energy distribution 영역이 존재한다는 것을 확인할 수 있었다. 또한, 25 Gauss 정도의 electro-magnetic field를 이용하여 Ar의 ion energy를 10 eV 이하로 낮추어 damage를 최소화함으로써 효과적으로 그래핀을 cleaning 할 수 있었다. Cleaning과정에서 ion bombardment에 의해 발생한 damage는 $250^{\circ}C$에서 6시간 동안 annealing 공정을 거치면서 회복되는 것을 Raman spectroscopy의 D peak ($1335cm{\cdot}^1$) / G peak ($1572cm{\cdot}^1$) ratio 로 확인할 수 있었고, PMMA residue의 cleaning 여부는 G peak ($1580cm{\cdot}^1$)의 blue shift와 2D peak ($2670cm{\cdot}^1$)의 red shift를 통해 확인하였다. 그리고 AFM (Atomic Force Microscopy)을 이용하여 cleaning 공정과정에서 RMS roughness가 4.99 nm에서 2.01 nm로 감소하는 것을 관찰하였다. 마지막으로, PMMA residue의 cleaning 정도를 정량적으로 분석하기 위해 XPS (X-ray Photoelectron Spectroscopy)를 이용하여 sp2 C-C bonding이 74.96%에서 87.66%로 증가함을 확인을 할 수 있었다.

• 대한환경공학회지
• /
• 제30권3호
• /
• pp.339-344
• /
• 2008

티타늄 박막을 1 M의 황산나트륨 수용액과 0.5 wt%의 불화나트륨에 의해 제조된 전해질 용액에 담지하고 전기화학적 양극산화법으로 약 20분간 20$^{\circ}C$의 온도로 수행하여 티타늄다이옥사이드 나노튜브 필름을 제작하였다. 주사전자현미경과 X선회절분석기를 이용하여 각각 미세구조와 결정구조를 측정하였으며, 나노튜브의 직경은 대략 100 nm 정도이고, 길이는 1 $\mu$m 정도로 나타났다. 이 후 티타늄다이옥사이드 나노튜브는 450에서 풀림공정을 수행하였으며, 아나타제 결정형으로 나타났다. 또한 본 연구에서는 제작된 나노튜브 박막을 이용하여 물에 용존된 휴믹산의 제거실험을 수행하였으며 Langmuir-Hinshelwood kinetic 0차 반응의 경향을 보였으며, 약 0.3 g 정도의 파우더형 광촉매와 같은 효율을 보였다.

• 한국항공우주학회지
• /
• 제31권10호
• /
• pp.73-78
• /
• 2003

항공우주 분야의 MEMS 기술의 중요성은 경량화 및 높은 분해능 등의 목적아래 점차 증가하고 있는 추세이다. 따라서 MEMS 기기의 제작에 있어 박막 물성의 조사 및 개선 방안은 중요한 논점이 되고 있으며, 박막의 잔류응력은 MEMS 기기 제작 및 구동에 있어 해결해야 할 중요한 문제점으로 남았있다. 따라서 본 논문에서는 MEMS 기기의 구조제로 많이 쓰이는 LPCVD 다결정 실리콘에 He+, Ar+ 이온을 주입함으로써 응력 구배를 완화하였다. 또한 Nano-indenter를 이용한 CSM 방법을 사용하여, 다결정 실리콘의 탄성계수와 경도를 압입 깊이에 따라 측정하였다. 그 결과, 이온 주입에 의한 결정성의 변화가 탄성계수와 경도를 감소시키지만, 이온 농도가 증가함에 따라 탄성계수와 경도가 증가하는 현상을 관찰하였다.