• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.697-700
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• 2004

The SBT$(Sr_{0.8}Bi_{2.4}Ta_2O_9)$ thin films for semiconductor device were deposited on Pt-coated $Pt/TiO_2/SiO_2Si$ wafer by RF magnetron sputtering method at $400[^{\circ}C]$ and annealed at the temperature range from $600[^{\circ}C]$ to $850[^{\circ}C]$. The top electrodes(Pt) were deposited on SBT thin film by DC sputtering method. The crystallinity of SBT thin films were increased with increase of annealing temperature in the temperature range of $600[{\circ}C]\sim850[^{\circ}C]$. The annealing temperature properties were to be most excellent in the case of annealed SBT thin film at $750^{\circ}C]$. And, the maximum remanent polarization$(2P_r)$ and the coercive electric field$(E_c)$ at annealing temperature of $750[^{\circ}C]$ obtained about $11.60[{\mu}C/cm^2]$ and 48[kV/cm], respectively. Specially, it was seen that fatigue properties does not change in $10^{10}$ switching cycle.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.21-26
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• 2005

The field effect transistors (FETs) were fabricated ell $Y_2O_3/Si(100)$ substrates by the conventional memory processes and sol-gel process using $(Bi,La)Ti_3O_{12}(BLT)$ ferroelectric gate materials. The remnant polarization ($2Pr = Pr^+-Pr^-$) int Pt/BLT/Pt/Si capacitors increased from $22 {\mu}C/cm^2$ to $30{\mu}C/ cm^2$ at 5V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. There was no drastic degradation in the polarization values after applying the retention read pulse for $10^{5.5}$ seconds. The capacitance-voltage data of $Pt/BLT/Y_2O_3/Si$ capacitors at 5V input voltage showed that the memory window voltage decreased from 1.4V to 0.6V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. The leakage current of the $Pt/BLT/Y_2O_3/Si$ capacitors annealed at $750^{\circ}C$ was about $510^{-8}A/cm^2$ at 5V. From the drain currents versus gate voltages ($V_G$) for $Pt/BLT/Y_2O_3/Si(100)$ FET devices, the memory window voltages increased from 0.3V to 0.8V with increasing tile $V_G$ from 3V to 5V.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.391.2-391.2
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• 2014

Solution-processible hybrid bipolar field effect transistors (HBFETs) with balanced hole and electron mobilities were fabricated using a combination of the organic p-type poly (3-hexylthiophene) (P3HT) layer and inorganic n-type ZnO material. The hole and electron mobilities were first optimized in single layer devices by using acetonitrile as a solvent additive to process the P3HT and annealing to process the ZnO layer. The highest hole mobility of the P3HT-only-devices with 5% acetonitrile was 0.15 cm2V-1s-1, while the largest electron mobility was observed in the ZnO-only-devices annealed at $200^{\circ}C$ and found to be $7.2{\times}10-2cm2V-1s-1$. The inorganic-organic HBFETs consisting of P3HT with 5% acetonitrile and ZnO layer annealed at $200^{\circ}C$ exhibited balanced hole and electron mobilities of $4.0{\times}10-2$ and $3.9{\times}10-2cm2V-1s-1$, respectively. The effect on surface morphology and crystallinity by adding acetonitrile and thermal annealing were investigated through X-ray diffraction and atomic force microscopy (AFM). Our findings indicate that techniques demonstrated herein are of great utility in improving the performance of inorganic-organic hybrid devices

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.2
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• pp.142-152
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• 1992

This paper presentes a new method to measure high electric field (or high voltage) by using crystalline SiO2 which has very high half wave voltage. There are many difficulties in measuring high electric field using other crystals which have generally low half wave voltage.By applying Stokes parameter and Mueller matrix. We derive optical modulation equation in the sensor which is composed of a polarizer, and Mueller matrix, we derive optical modulation equation in the sensor which is composed of a polarizer, a Pokels material, and an analyzer, We theoretically analyzed electro-optic effect, and calculated the phase retardation and half wave volt age of the birefringent material. The designed optical valtage sensor has very excellent linearity up to 20KV without divided volt-age. The maximum error was measured within 3%. Before annealing of Sio2 crystal, the maximum variation of the output voltage is 7.5% with varying temperature from \ulcorner20˚c to 60˚c. But, after annealing of SiO2 crystal, the output voltage variation is improved within 1%error.

• Applied Chemistry for Engineering
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• v.17 no.5
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• pp.471-475
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• 2006

$VO_x$ thin films with the thickness of 450 nm were prepared on a $Pt/Ti/SiO_{2}/Si$ substrate at room temperature by a reactive radio frequency (rf) magnetron sputtering method. The deposition rates of $VO_x$ thin films were investigated as a function of $O_{2}$ concentration and rf power. As the $O_{2}$ concentration in a $O_{2}/Ar$ mixture increased, the deposition rate decreased. However, the deposition rate increased with increasing rf power. The deposited $VO_x$ thin films were annealed at $450^{\circ}C$ for 2, 4, and 6 h in $O_{2}$ and $N_{2}$ ambient. After annealing, the phase changes of $VO_x$ thin films were investigated using X-ray diffraction analysis. The plane and cross-sectional views of $VO_x$ thin films before and after annealing were observed by field emission scanning electron microscopy. The metal-insulator transition (MIT) properties of $VO_x$ thin films were measured using current-voltage measurement. The excellent MIT properties were observed in $VO_x$ thin films annealed in $O_{2}$ ambient.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.95-98
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• 2007

In this paper, the magnetic properties and the annealing behavior of spin valve structures with Mo(MoN) underlayers were studied for various underlayer thickness. The spin valve structure was Si substrate/Mo(MoN)$(t{\AA})/NiFe(21{\AA})/CoFe(28{\AA})/Cu(22{\AA})/CoFe(18{\AA})/IrMn(65{\AA})/Ta(25 {\AA})$. Mo and MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The deposition rate of the MoN thin film was decreased and tile resistivity of the MoN thin films were increased as the $N_2$ gas flow was increased. The variations of MR ratio and magnetic exchange coupling field of spin valve structure were smaller with MoN underlayers than that with Mo underlayers up to thickness of $51{\AA}$. MR ratio of spin valves with Mo underlayers was 2.86% at room temperature and increased up to 2.91 % after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 2.16%. The MR ratio of spin valves structure with MoN underlayers for $N_2$ gas flow 1 sccm was 5.27% at room temperature and increased up to 5.56% after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 4.9%.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.44-50
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• 1993

In an attempt to improve the electrical characteristics of tantalum pentoxide dielectric film, silicon substrate was reacted with a nitrogen plasma to form a silicon nitride of 50.angs. and then tantalum pentoxide thin films were formed by reactive sputtering in the same chamber. Breakdown field and leakage current density were measured to be 2.9 MV/cm and 9${\times}10^{8}\;A/cm^{2}$ respectively in these films whose thickness was about 180.angs.. With annealing at rectangular waveguides with a slant grid are investigated here. In particular, 900.deg. C in oxygen ambient for 100 minutes, breakdown field and leakage current density were improved to be 4.8 MV/cm and 1.61.6${\times}10^{8}\;A/cm^{2}$ respectively. It turned out that the electrical characteristics could also be improved by oxygen plasma post-treatment and the conduction mechanism at high electric field proved to be Schottky emission in these double-layered films.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1440-1442
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• 1996

The laser annealing effects on the TEOS (Tetra-Ethyl-Ortho-Silicate) oxide of MOS (Al/TEOS/n+ Silicon) structures was investigated with different initial oxide conditions, such as breakdown field. The breakdown field increased up to the 170 $mJ/cm^2$ with increasing laser energy density and decreased at 220 $mJ/cm^2$. It is considered that the increase of breakdown field is originated from the restore of strains which exist mainly at the metal/oxide interface.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.5
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• pp.496-500
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• 1991

The effects of annealing with and without magnetic field on magnetic properties of amorphous Fe-B-Si cores have been investigated as a function of toroidal stress. By decreasing the toroidal stress, the magnetic properties of the amorphous ribbon have beenimproved. Near 180 domain walls exist in the thermally annealed toroidal cores, but the domain walls exist in the thermally annealed toroidal cores, but the domain walls are not parallel to the longitudinal direction of the ribbon. In the specimen annealed with a magnetic field strength of 10 Oe in the longitudinal ribbon length axis, the domains are nearly parallel to the longitudinal direction due to the field induced uniaxial anisotropy resulting in further increase in the remanent magnetization and decrease in the coercive force and loss.

• Journal of Magnetics
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• v.1 no.1
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• pp.31-36
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• 1996

An externally applied magnetic field during heat treating the $Nd_2Fe_{14}B/Fe_3B$ based spring magnet was found to enhance the exchange coupling between the hard and soft magnetic grains. More than 30% increase in $M_r/M_s$ values for melt-spun $Nd_2Fe_{73.5}Co_3$$(Hf_{1-x}Ga_x)B_{18.5}$ (x=0, 0.5, 1) alloys was resulted from a uniform distribution of $Fe_3B, \alpha-Fe$ and $Nd_2Fe_{14}B$ phases, and also from a reduced grain size of those phases by 20%. The externally applied magnetic field induced a uniform distribution of fine grains. A study of Mossbauer effect also report that the enhancement of total magnetization of nanocomposite $Nd_2Fe_{14}B/Fe_3B$ alloys is attributed to an increased formation of $Fe_3$B after magnetic annealing.