• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1517-1519
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• 2003

A novel technique of alternating magnetic field (AMF) is investigated to improve the electrical conducting properties of pentacene. By applying AMF to pentacene layer, the electrical conductivity of pentacene was enhanced, which can be applied for characteristic improvements of pentacene-based thin-film transistors. In this study, the annealing effects of pentacene layer using AMF will be discussed.

• 비파괴검사학회지
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• 제34권6호
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• pp.441-446
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• 2014

A 3D ultrasound image is desired in many medical examinations. However, the implementation of a 2D array, which is needed for a 3D image, is challenging with respect to fabrication, interconnection and cabling. A 2D sparse array, which needs fewer elements than a dense array, is a realistic way to achieve 3D images. Because the number of ways the elements can be placed in an array is extremely large, a method for optimizing the array configuration is needed. Previous research placed the target point far from the transducer array, making it impossible to optimize the array in the operating range. In our study, we focused on optimizing a 2D sparse array transducer for 3D imaging by using a simulated annealing method. We compared the far-field optimization method with the near-field optimization method by analyzing a point-spread function (PSF). The resolution of the optimized sparse array is comparable to that of the dense array.

• 한국재료학회지
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• 제14권10호
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• pp.701-706
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• 2004

Bismuth layered structure ferroelectric thin films, La-substituted $Bi_{4}Ti_{3}O_{12}$ ($Bi_{1-x}La_{x}Ti_{3}O_{12}$, x=0.75, BLT) were prepared on the $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin coating process. The thin films were annealed in various conditions, i.e., oxygen, nitrogen and vacuum atmospheres for various annealing time. We investigated the annealing condition effects on the grain orientation and ferroelectric properties. The measured XRD patterns revealed that the BLT thin films showed only $Bi_{4}Ti_{3}O_{12}$-type phase with random orientation. $La^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of $Bi_{4}Ti_{3}O_{12}$ decreased the degree of c-axis orientation and increased the remanent polarization ($2P_{r}$). The remanent polarization ($2P_{r}$) and the coercive field ($2E_{c}$) of the BLT thin film annealed at $650^{\circ}C$ for 5 min in oxygen atmosphere were $87{\mu}C/cm^2$ and 182 kV/cm, respectively, at an applied electric field of 240 kV/cm. For all of the BLT thin films annealed in various conditions, the fatigue resistance was shown. The improvement of ferroelectric properties with La substitution in $Bi_{4}Ti_{3}O_{12}$ could be attributed to the changes in space charge densities and grain orientation in the thin film.

• 한국재료학회지
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• 제25권12호
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• pp.703-707
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• 2015

In this study, we investigated the effect of annealing conditions on the ferromagnetic resonance(FMR) of yttrium iron garnet ($Y_3Fe_5O_{12}$, YIG) thin film prepared on gadolinium gallium garnet ($Gd_3Ga_5O_{12}$, GGG) substrate. The YIG thin films were grown by rf magnetron sputtering at room temperature and were annealed at various temperatures from 700 to $1000^{\circ}C$. FMR characteristics of the YIG thin films were investigated with a coplanar waveguide FMR measurement system in a frequency range from 5 to 20 GHz. X-ray diffraction(XRD) and X-ray photoelectron spectroscopy(XPS) were used to characterize the phase formation, crystal structure and composition of the YIG thin films. Field dependent magnetization curves at room temperature were obtained by using a vibrating sample magnetometer(VSM). The FMR measurements revealed that the resonance magnetic field was highly dependent on the annealing condition: the lowest FMR linewidth can be observed for the $800^{\circ}C$ annealed sample, which agrees with the VSM results. We also found that the Fe and O composition changes during the annealing process play important roles in the observed magnetic properties.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.386-389
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• 2009

The electrical characteristics and annealing effects of tunneling dielectrics stacked with $SiO_2$ and $Si_{3}N_{4}$ were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_{3}N_{4}/SiO_2/Si_{3}N_{4}$ (NON), $SiO_2/Si_{3}N_{4}/SiO_2$ (ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS (metal-oxide-semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field. Furthermore, the increased tunneling current through engineered tunneling barriers related to high speed operation can be achieved by annealing processes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.124-124
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• 2009

We observed the changes of crystal structure of Rubrene (5,6,11,12-tetraphenylnaphthacene) polycrystal thin films at various in situ substrate temperature and process by scanning electron microscope(SEM), x-ray diffraction (XRD) and near-field microwave microprobe (NFMM). Amorphous rubrene thin film was initially obtained on 200 nm thick $SiO_2/Si$ substrate at 35 $^{\circ}C$ in a vacuum evaporation but in situ long time postannealing at the temperature 80 $^{\circ}C$ transformed the amorphous phase into crystalline. Four heating conditions are followed : (a) preheating (b) annealing (c) preheating, annealing (d) preheating, cooling(35 $^{\circ}C$), annealing. We have obtained the largest polycrystal disk in sample (c). But the highest crytallity and conductivity of the rubrene thin films were obtained in sample (d).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.25-26
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• 2011

In this paper, we investigated the effect of various annealing processes on the electrical characteristics of oxide thin film transistors (TFTs). When we annealed the TFT devices before and after source/drain (S/D) process, we could observe the different electrical characteristics of oxide TFTs. When we annealed the TFTs after deposition of transparent indium zinc oxide S/D electrodes, the annealing process decreased the contact resistance but increased the resistivity of S/D electrodes. The field effect mobility, subthreshold slope and threshold voltage of the oxide TFTs annealed before and after S/D process were 5.83 and 4.47 $cm^2$/Vs, 1.20 and 0.82 V/dec, and 3.92 and 8.33 V respectively. To analyze the differences, we measured the contact resistances and the carrier concentrations using transfer length method (TLM) and Hall measurement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.49-51
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• 1989

The effect of Mo elenent and annealing condition on the magnetic properties were investigated in Fe$_{80}$B$_{12}$Si$_{8}$ amorphous alloy. With increasing Mo contents, soft magnetic properties were improved by decreasing coercive force and increasing maximum permeability. These improvements were attributed to the decreasing of magnetostriction by Mo addition. The annealing treatment also improved the soft magnetic properties of (Fe$_{1-x}$ Mo$_{x}$)$_{80}$ B$_{12}$ Si$_{8}$ amorphous alloys. It could be thought that these improvements were ascribed to the relaxation of internal stress.nal stress.ess.

• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.152-156
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• 1994

The rapid thermal annealing effects of Sol-Gel derived ferroelectric PZT thin films were investigated. It was found that rapid thermal annealing(RTA) of spin coated thin films on silicon typically >$800^{\circ}C$ for about 1 min. was changed to the perovskite phase. Rapid thermally annealed films recorded maximum remanent polarization of about 5 .mu.C/cm$^{2}$, coercive field of around 30kV/cm. The switching time for polarization reversal was about 220ns. The films of RTA process showed smooth surface, and high breakdown voltages of over 1 MV/cm and resistivity of $1{\times}{10^12}$ .ohm.cm at 1 MV/cm. It was verified that the polarization reversal of the PZT film was varied partially with applying the multiple short pulse.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1498-1499
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• 1998

Thin film inductors of 10 mm ${\times}$ 10 mm with spiral pattern of 14 turns were fabricated by sputtering, photo-masking, and etching processes. Their impedence characteristics and annealing after effects were investigated. After magnetic annealing, the impedence characteristics of the inductors were improved at comparatively low frequencies, but the tendencies of it for thr frequency changes were almost same. These improvement was caused by the annihilation of the internal stresses of films, Uniaxial field annealed thin film inductor had an inductance of 1000 nH, resistance of 6 $\Omega$, and quality factor of 1 at 2 MHz.