• 한국재료학회지
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• 제12권6호
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• pp.464-469
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• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.

• The Korean Journal of Ceramics
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• 제3권4호
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• pp.263-268
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• 1997

RuO$_3$ thin films were deposited on Si(100) substrate at low temperatures by hot-wall metalorganic chemical vapor deposition. Bis(cyclopentadienyl) ruthenium, Ru$(C_5H_5)_2$, was used as the precursor RuO$_2$single phase was obtained at a low deposition temperature of 25$0^{\circ}C$ and the crystallinity of RuO$_2$thin films improved with increasing deposition temperature. RuO$_2$thin films grow perpendicularly to the substrate and show the columnar structure. The grain size of RuO$_2$films drastically increases with increasing the deposition temperature. The resistivity of the 180 nm-thick RuO$_2$thin films deposited at 27$0^{\circ}C$ was 136 $\mu$$\Omega$-cm and increased with decreasing film thickness. SrBi$_2Ta_2O_4$ thin films deposited by rf magnetron sputtering on the RuO$_2$bottom electrodes showed a fatigue-free characteristics up to ~10$^10$ cycles under 5 V bipolar square pulses and the remanent polarization, 2 P$_r$ and the coercive field, 2 E, were 5.2$\mu$C/$\textrm{cm}^2$ and 76.0 kV/cm, respectively, for an applied voltage of 5 V The leakage current density was about 7.0$\times$10$^{-6}$ A/$\textrm{cm}^2$ at 150 kV/cm.

• 한국결정성장학회지
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• 제13권6호
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• pp.272-278
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• 2003

초음파 분무에 의한 유기금속 화학증착법 (MOCVD)법으로 $Bi_4Ti_3O_{12}$(BIT)와 Bi와 Ti 대신에 La과 V을 동시에 치환시킨 ($Bi_{3.75}La_{0.75})(Ti_{2.97}V_{0.03})O_{12}$ (BLTV)박막을 ITO/glass 기판 위에 증착하였다. 산소 분위기에서 30분 동안 증착한 후, RTA 방식의 직접삽입법으로 열처리를 하였다. 박막은 페로브스카이트상 생성 온도, 미세구조, 전기적 성질에 관해서 조사하였다. XRD(X-Ray diffraction) 측정결과 BLTV 박막의 페로브스카이트상 생성 온도는 약 $600^{\circ}C$로써 BIT의 $650^{\circ}C$보다 더 낮았다. BLTV 박막의 누설전류는 인가전압 1 V에서 $1.52\times10^{-19}$ A/cm^2$로 측정되었다 또한, $650^{\circ}C$에서 증착했을 경우 잔류 분극값이 $5.6\mu$C/$cm^2$, 항전계값 96.5 kV/cm으로 명확한 강유전성을 보이고 있다.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1092-1098
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• 2006

The influence of the concentration of precursor solution and the number of solution coatings on the densification of the $Pb(Zr_xTi_{1-x})O_3$ (PZT) thick films was studied. PZT powder and PZT precursor solution were prepared by3 sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The composition of powder and precursor solution were PZT(70/30) and PZT(30/70), respectively. The PZT precursor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 to 2.0 mol/L[M] and the number of coating was repeated from 0 to 6. The XRD patterns of all PZT thick films shelved typical perovskite polycrystalline structure. The porosity of the thick films was decreased with increasing the number of coatings and 6-time coated films with 1.5 M showed the dense microstructure and thickness of about $60{\mu}m$. The relative dielectric constant of the PZT thick film was increased with increasing the number of solution coatings and the thick films with 1.5 M, 6-time coated showed the 698. The remanent polarization the 1.5 M and 6-time coated PZT thick films was $38.3{\mu}C/cm^2$.

• 한국세라믹학회지
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• 제38권6호
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• pp.558-567
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• 2001

본 연구에서는 알콕사이드를 전구물질로 하는 졸겔공정을 이용하여 Bi 과잉 12 mol%의 조성인 B $i_4$ $Ti_3$ $O_{12}$ 박막과 B $i_4$ $Ti_{3-x}$T $a_{x}$ $O_{12}$(x=0.1, 0.2, 0.3) 박막을 제조하였다. XPS 분석에 따르면 Ta 치환 x=0.2에서 Bi 4f의 photoemission 곡선이 낮은 결합에너지로 이동하였고 피크 강도가 감소하는 현상이 관측되었다. 이는 x=0.1과 0.2 사이에서 Bi-O 결합이 길어져 인장상태 하에 있었음을 나타내었다. B $i_4$ $Ti_3$ $O_{12}$(BIT) 박막의 유전상수와 유전손실은 100 kHz에서 340, 0.05이었고, B $i_4$ $Ti_{3-x}$T $a_{x}$ $O_{12}$ 박막에서 이들 값은 x=0.1에서 가장 높았으며, 각각 480, 0.13이었다. B $i_4$ $Ti_3$ $O_{12}$ 박막의 잔류분극과 항전계는 1.24$\mu$C/$ extrm{cm}^2$, 31.4 kV/cm 이었으나, Ta 치환 x=0.2에서 이들 값은 각각 19.7$\mu$C/$\textrm{cm}^2$, 49.5 kV/cm 에 이르렀다. 또한, B $i_4$ $Ti_3$ $O_{12}$ 박막의 누설전류 밀도는 ~$10^{-6}$ A/$\textrm{cm}^2$ 정도이었으며, Ta 치환은 누설전류를 감소시켜 Ta 치환 x=0.2 이상에서 BIT 박막에 비해 한 차수 정도 낮아졌다. Ta 치환에 따른 B $i_4$ $Ti_3$ $O_{12}$ 전기 물성에서 변화는 Bi-O 결합에서 관측된 인장상태로의 전이와 연관성이 있었으며, 덧붙여 치환에서 생성된 전자에 의한 정공보상이 이에 영향을 끼쳤다. 정공보상이 이에 영향을 끼쳤다.끼쳤다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.221-225
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• 2003

The MFIS-FET(Field Effect Transistor) devices using $BLT/Y_2O_3$ buffer layer on p-Si(100) substrates were fabricated by the Sol-Gel method and conventional memory processes. The crystal structure, morphologies and electrical properties of prepared devices were investigated by using various measuring techniques. From the C-V(capacitance-voltage) data at 5V, the memory window voltage of the $Pt/BLT/Y_2O_3/si$ structure decreased from 1.4V to 0.6V with increasing the annealing temperature from $700^{\circ}C\;to\;750^{\circ}C$. The drain current (Ic) as a function of gate voltages $(V_G)$ for the $MFIS(Pt/BLT/Y_2O_3/Si(100))-FET$ devices at gate voltages $(V_G)$ of 3V, 4V and 5V, the memory window voltages increased from 0.3V to 0.8V as $V_G$ increased from 3V to 5V.

• 한국세라믹학회지
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• 제38권10호
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• pp.948-952
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• 2001

스크린 인쇄법으로 알루미나 기판 위에 PZT 후막을 제조하였으며, 공기 또는 Pb 분위기의 $750{\sim}1050^{\circ}C$에서 1시간 동안 소결하여 소결 조건이 후막의 물성에 미치는 영향을 조사하였다. 공기 중에서 $950^{\circ}C$ 이상의 온도로 소결한 PZT 후막에는 파이로클로 상이 제 2상으로 존재하고 있었으며, Pb분위기에서 소결한 PZT 후막이 공기 중에서 소결한 후막보다 치밀한 미세구조와 큰 유전상수 그리고 잘 발달된 P-E 이력특성을 보였다. $900^{\circ}C$의 Pb 분위기에서 소결한 PZT 후막은 잘 포화된 전형적인 강유전 P-E 이력곡선 모양을 보였으며, 잔류분극과 항전계가 각각 $29.8{\mu}C/cm^2$, 48.4 kV/cm이었다.

• 한국세라믹학회지
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• 제42권11호
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• pp.749-752
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• 2005

When an electric field higher than a characteristic coercive field is applied to a ferroelectric such as $LiNbO_3$, the orientation of the spontaneous polarization is reversed, which causes the reversal of the sign of odd-rank tensor properties such as electro-optic and nonlinear optic coefficients. A fabrication process of insulator and periodic external field assisted poling of a z-cut $LiNbO_3$ have been optimized for a periodic $180^{\circ}$ phase inversion along z-axis. The poling jig and the poling control system, fully controlled by a computer, for high quality and reproducible PPLN fabrication have been devised. Periodically polarization reversed PPLN was adjusted based on the fabricated thickness of insulator. The poling structure of PPLN was observed under a microscope after etching PPLN samples by an etching solution ($HF:HNO_3$ = 1 : 2) for about 15 min.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.336-336
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• 2008

A positive temperature coefficient of electrical resistivity (PTCR) was investigated in a ferroelectric lead-free perovskite-type compound $(Bi_{0.5}K_{0.5})TiO_3$ within $BaTiO_3$-based solid solution ceramics. The electrical properties and the microstructure of (1-x) $BaTiO_3$ - x $(Bi_{0.5}K_{0.5})TiO_3$ (BBKT) ceramics made using a conventional mixed and have been synthesized by an ordinary sintering technique. The Curie temperature was obviously increased with increasing of $(Bi_{0.5}K_{0.5})TiO_3$ content. The BKT ceramics (x=0.05) sintered at $1400^{\circ}C$ for 4h display low resistivity values of $10^1-10^2$ ohm cm at room temperature, PTCR effect(jump) of 1.05*$10^3$, and the Curie temperature of $T_c=141^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.331-332
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• 2008

Couplings between electric, magnetic, and structural order parameters result in the so-called multiferroic phenomena with two or more ferroic phenomena such as ferroelectricity, ferromagnetism, or ferroelasticity. The simultaneous ferroelectricity and ferromagnetism (magnetoelectricity) permits potential applications in information storage, spintronics, and magnetic or electric field sensors. The perovskite BiFeO3(BFO) is known to be antiferromagnetic below the Neel temperature of 647K and ferroelectric with a high Curie temperature of 1043K. It exhibits weak magnetism at room temperature due to the residual moment from a canted spin structure. It is likely that non-stoichiometry and second-phase formation are the factors responsible for leakage current in BFO. It has been suggested that oxygen non-stoichiometry leads to valence fluctuations of Fe ions in BFO, resulting in high conductivity. To reduce the large leakage current of BFO, one attempt is to make donor-doped BFO compounds and thin films. In this study, (Bi1-x,Ndx)(Fe1-y,Tiy)O3 thin films have been deposited on Pt(111)/TiO2/SiO2/Si substrates by pulsed laser deposition. The effect of dopants on the phase evolution and surface morphology are analyzed. Furthermore, electrical and magnetic properties are measured and their coupling characteristics are discussed.