• 제목/요약/키워드: ferroelectric devices

검색결과 121건 처리시간 0.023초

Ferro-nematics and their outlook

  • West, John L.;Jakli, A.;Glushchenko, Anatoliy;Reznikov, Yuri
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.287-288
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    • 2004
  • We report on the development of ferronematic liquid crystals, new materials that consist of a dilute suspension of ferroelectric particles in a nematic liquid crystal host. The particles share their ferroelectric properties with the nematic liquid crystal and impose a spontaneous dielectric polarization of about 10 nC/$cm^2$ to the entire medium, typical for many ferroelectric liquid crystals. As expected, these new materials have enhanced dielectric anisotropy and are sensitive to the sign of an applied electric field. The potential of their use in a number of devices are discussed.

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Characteristics of Ferroelectric Transistors with $BaMgF_4$ Dielectric

  • Lyu, Jong-Son;Jeong, Jin-Woo;Kim, Kwang-Ho;Kim, Bo-Woo;Yoo, Hyung-Joun
    • ETRI Journal
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    • 제20권2호
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    • pp.241-249
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    • 1998
  • The structure and electrical characteristics of metal-ferroelectric-semiconductor FET(MFSFET) for a single transistor memory are presented. The MFSFET was comprised of polysilicon islands as source/drain electrodes and $BaMgF_4$ film as a gate dielectric. The polysilicon source and drain were built-up prior to the formation of the ferroelectric film to suppress a degradation of the film due to high thermal cycles. From the MFS capacitor, the remnant polarization and coercive field were measured to be about $0.6{\mu}C/cm^2$ and 100 kV/cm, respectively. The fabricated MFSFETs also showed good hysteretic I-V curves, while the current levels disperse probably due to film cracking or bad adhesion between the film and the Al electrode.

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메로리 소자 응용을 위한 펄스 레이저 증착법으로 제작된 PLT박막의 열처리 효과 (Annealing Effect of Pb(La, Ti)$O_3$Thin Films Grown by Pulsed Laser Deposition for Memory Device Application)

  • 허창회;심경석;이상렬
    • 한국전기전자재료학회논문지
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    • 제13권9호
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    • pp.725-728
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    • 2000
  • Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, We have systematically investigated the variation of grain sizes depending on the process condition of two-step process. Both in-situ annealing and ex-annealing have been compared depending on the annealing time. C-V measurement, ferroelectric properties, leakage current, XRD and SEM were performed to investigate the electircal properties and microstructural properties of Pb(La, Ti)O$_3$ films.

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메모리 소자 응용을 위한 펄스 레이저 증착법으로 제작된 PLT박막의 열처리 효과 연구 (Effect of grain size of Pb(La,Ti)O$_3$thin films grown by pulsed laser deposition for memory device application)

  • 허창회;심경석;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.861-864
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    • 2000
  • Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, thin films of PLT(28)(Pb$\sub$0.72/La$\sub$0.28/Ti$\sub$0.93/O$_3$) were fabricated on Pt/Ti/SiO$_2$/Si substrates in-situ annealing and ex-situ annealing have been compared depending on the annealing time. We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)O$_3$.

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비납계 Bi0.5Na0.5의 강유전 및 압전 특성에 미치는 Nb-doping 효과 (Nb-doping Effects on Ferroelectric and Piezoelectric Properties of Pb-free Bi0.5Na0.5)

  • 여홍구;성연수;송태권;조종호;정순종;송재성;김명호
    • 한국재료학회지
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    • 제16권11호
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    • pp.705-709
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    • 2006
  • Nb was doped to Pb-free $(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) by a solid state mixing process to form $(Bi_{0.5}Na_{0.5})Ti_{1-x}Nb_xO_3\;(x=0{\sim}0.05)$ (BNTNb) and its doping effects on ferroelectric and piezoelctric properties of BNT were investigated. The BNTNb solid solutions were formed up to x=0.01 with no apparent second phases while grain sizes decreased. As x increased, coercive field ($E_c$) and mechanical quality factor ($Q_m$) decreased but piezoelectric constant ($d_{33}$) increased, which indicates Nb acts as a donor for BNT.

플루오라이트 구조 강유전체 박막의 분극 반전 동역학 리뷰 (A Brief Review on Polarization Switching Kinetics in Fluorite-structured Ferroelectrics)

  • 김세현;박근형;이은빈;유근택;이동현;양건;박주용;박민혁
    • 한국표면공학회지
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    • 제53권6호
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    • pp.330-342
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    • 2020
  • Since the original report on ferroelectricity in Si-doped HfO2 in 2011, fluorite-structured ferroelectrics have attracted increasing interest due to their scalability, established deposition techniques including atomic layer deposition, and compatibility with the complementary-metal-oxide-semiconductor technology. Especially, the emerging fluorite-structured ferroelectrics are considered promising for the next-generation semiconductor devices such as storage class memories, memory-logic hybrid devices, and neuromorphic computing devices. For achieving the practical semiconductor devices, understanding polarization switching kinetics in fluorite-structured ferroelectrics is an urgent task. To understand the polarization switching kinetics and domain dynamics in this emerging ferroelectric materials, various classical models such as Kolmogorov-Avrami-Ishibashi model, nucleation limited switching model, inhomogeneous field mechanism model, and Du-Chen model have been applied to the fluorite-structured ferroelectrics. However, the polarization switching kinetics of fluorite-structured ferroelectrics are reported to be strongly affected by various nonideal factors such as nanoscale polymorphism, strong effect of defects such as oxygen vacancies and residual impurities, and polycrystallinity with a weak texture. Moreover, some important parameters for polarization switching kinetics and domain dynamics including activation field, domain wall velocity, and switching time distribution have been reported quantitatively different from conventional ferroelectrics such as perovskite-structured ferroelectrics. In this focused review, therefore, the polarization switching kinetics of fluorite-structured ferroelectrics are comprehensively reviewed based on the available literature.

누설전류를 고려한 Quasi-MFISFET 소자의 특성 (Characteristics of Quasi-MFISFET Device Considering Leakage Current)

  • 정윤근;정양희;강성준
    • 한국정보통신학회논문지
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    • 제11권9호
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    • pp.1717-1723
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    • 2007
  • 본 연구에서는 PLZT(10/30/70), PLT(10), PZT(30/70) 강유전체 박막을 이용한 quasi-MFISFET (Metal-Ferroelectric-Insulator-Semiconductor FET) 소자를 제작하여 드레인 전류 특성을 조사하였다. 이로부터, quasi-MHSFET 소자의 드레인 전류 크기가 강유전체 박막의 분극 크기에 따라 직접적인 영향을 받으며 결정된다는 사실을 알 수 있었다. 또, ${\pm}5V$${\pm}10V$의 게이트 전압변화를 주었을 때 메모리 윈도우는 각각 0.5V 와 1.3V 이었고, 강유전체 박막에 인가되는 전압에 의해 만들어지는 항전압의 변동에 따라 메모리 윈도우가 변화된다는 사실을 확인할 수 있었다. MFISFET 소자의 retention 특성을 알아보기 위 해 PLZT(10/30/70) 박막의 전기장과 시간지연에 따른 누설전류 특성을 측정하여 전류밀도 상수 $J_{ETO}$, 전기장 의존 요소 K, 시간 의존 요소 m을 구하고, 이들 파라미터를 이용하여 시간에 따른 전하밀도의 변화를 정량적으로 분석하였다.

NDRD 방식의 강유전체-게이트 MFSFET소자의 특성 (Characteristics of Ferroelectric-Gate MFISFET Device Behaving to NDRO Configuration)

  • 이국표;강성준;윤영섭
    • 대한전자공학회논문지SD
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    • 제40권1호
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    • pp.1-10
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    • 2003
  • 본 연구에서는 Metal-Ferroelecric-Semiconductor FET (MFSFET) 소자의 특성을 시뮬레이션 하였다. 시뮬레이션에서는 field-dependent polarization 모델과 square-law FET 모델이 도입되었다. MFSFET 시뮬레이전에서 C-V/sub G/ 곡선은 축적과 공핍 및 반전 영역을 확실하게 나타내었다. 게이트 전압에 따른 캐패시턴스, subthreshold 전류 그리고, 드레인 전류특성에서 강유전체 항전압이 0.5, 1V 일 때, 각각 1, 2V 의 memory window 를 나타내었다. 드레인 전류-드레인 전압 곡선은 증가영역과 포화영역으로 구성되었다. 드레인 전류-드레인 전압 곡선에서 두 부분의 문턱전압에 의해 나타난 포화드레인 전류차이는 게이트 전압이 0, 0.1, 0.2 그리고, 0.3V 일 때, 각각 1.5, 2.7, 4.0 그리고 5.7㎃ 이었다. 시간경과 후의 드레인 전류를 분석하였는데, PLZT(10/30/70) 박막은 10년 후에 약 18%의 포화 전류가 감소하여 우수한 신뢰성을 보였다. 본 모델은 MFSFET 소자의 동작을 예측하는데 중요한 역할을 할 것으로 판단된다.

Synthesis and Characterization of Lead Zirconium Titanate Nanofibers by Electrospinnig

  • 최수진;박주연;고성위;강용철
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.189.1-189.1
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    • 2014
  • Lead zirconium titanate (PZT) is usually used as bulk and thin films. Due to high flexibility and piezoelectric, ferroelectric and pyroelectric properties, PZT fiber has attracted in a variety of fields such as sensor devices, non-electromechanical systems and non-volatile ferroelectric memory devices. And PZT fiber can be numerously synthesized and almost with the diameter of PZT fiber thicker than $10{\mu}m$. However, the electrospinnig method is cost effective and convenient. PZT obtained by electrospinning methodhas the diameter from sub-micro to nanometer. In this paper, the PZT/PVP nanofibers were synthesized with three precursors, lead nitrate, zirconium ethoxide and titanium isopropoxide. And the PZT nanofibers were fabricated after removal of PVP by annealing process at various temperature. The obtained PZT nanofibers were characterized by means of X-ray photoelectron spectroscopy (XPS) for chemical properties, X-ray diffraction (XRD) for crystallinity and phase, scanning electron microscopy (SEM) for morphologies. The diameter of PZT nanofibers were measured with SEM. From the SEM images, we confirmed that diameter of PZT nanofibers was hundreds of nanometers and decreased with increasing the annealing temperature. When the annealing temperature increased, the crystallinity of PZT nanofibers changed from pyrochlore to perovskite structure.

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마이크로파 가변 소자용 K-band Coplanar Stripline 공진기 설계 (K-band Coplanar Stripline Resonator for Microwave Tunable Devices)

  • 강종윤;윤석진;김현재
    • 한국전기전자재료학회논문지
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    • 제18권6호
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    • pp.532-537
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    • 2005
  • In order to develop a tunable resonator which can be easily operated by DC bias and applied for microwave tunable filters and devices using ferroelectric thin or thick films, the non conductor backed-and conductor backed- coplanar stripline resonators have been designed and analyzed. They have been designed to be operated at 25 GHz which involve coplanar stripline input and output ports. The resonators have been simulated and analyzed using Ansoft HFSS. The research has been focused on the Quality factor of the coplanar stripline resonator. The conductor Q, box Q, and radiation Q of the resonators have been analyzed and calculated according to the substrate thickness & conductor width of the resonators. From these parameters, the loss factors of the coplanar stripline resonator have been investigated. The conducting Q of the coplanar stripline resonator has no relation with the thickness of dielectric substrate and increases as the conductor width increases. The box Q has no much relation with the thickness of substrate and the conductor width, which is above 2000. The radiation loss increases as the thickness of substrate and the conductor width increase. To decrease the radiation loss of the coplanar stripline resonator, a conductor backed coplanar stripline resonator has been proposed which has the unloaded Q of 170.