• Title/Summary/Keyword: facing material

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우리나라 수공구 제조업계의 현황과 문제점에 대한 인간공학적 고찰

  • 박희석
    • Proceedings of the ESK Conference
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    • 1995.10a
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    • pp.280-284
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    • 1995
  • The primary aim of this research is to summarize and discuss the problems that the hand tool manufactiuring industry of Korea is now facing. The study was performed mainly through the interviews with hand tool industry experts. Traditional design concepts are usually oriented towards the functionality of tools but often ignore the human factors such as ease of use, comfort, etc. As a result, for hand tools, mechanical and material aspects have been considerably enhanced but human factors have still much room for improvement.

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Measurement of Residual Stress of AlN Thin Films Deposited by Two-Facing-Targets (TFT) Sputtering System (Two-Facing-Targets (TFT) 스퍼터링장치를 이용하여 증착한 AlN박막의 잔류응력 측정)

  • Han, Chang-Suk;Kwon, Yong-Jun
    • Korean Journal of Materials Research
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    • v.31 no.12
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    • pp.697-703
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    • 2021
  • Aluminum nitride having a dense hexagonal structure is used as a high-temperature material because of its excellent heat resistance and high mechanical strength; its excellent piezoelectric properties are also attracting attention. The structure and residual stress of AlN thin films formed on glass substrate using TFT sputtering system are examined by XRD. The deposition conditions are nitrogen gas pressures of 1 × 10-2, 6 × 10-3, and 3 × 10-3, substrate temperature of 523 K, and sputtering time of 120 min. The structure of the AlN thin film is columnar, having a c-axis, i.e., a <00·1> orientation, which is the normal direction of the glass substrate. An X-ray stress measurement method for crystalline thin films with orientation properties such as columnar structure is proposed and applied to the residual stress measurement of AlN thin films with orientation <00·1>. Strength of diffraction lines other than 00·2 diffraction is very weak. As a result of stress measurement using AlN powder sample as a comparative standard sample, tensile residual stress is obtained when the nitrogen gas pressure is low, but the gas pressure increases as the residual stress is shifts toward compression. At low gas pressure, the unit cell expands due to the incorporation of excess nitrogen atoms.

Numerical Analysis for Optimum Reinforcement Length Ratio of Reinforced Earth Retaining Wall (보강토옹벽의 최적 보강길이비 산정을 위한 수치해석적 연구)

  • Park, Choonsik;Ahn, Woojong
    • Journal of the Korean GEO-environmental Society
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    • v.19 no.12
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    • pp.5-14
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    • 2018
  • Recently, method of reinforced earth retaining wall have been proposed according to the material of facing, geosynthetic, construction method, and facing slope. However, the regulations such as the design method and detailed review items according to each construction method are not clear, and collapse due to heavy rainfall frequently occurs. In this study, to obtain a more stable technical approach in the design of reinforced earth retaining wall, the combination of the pullout failure of reinforced earth retaining wall and the optimal reinforcement ratio of height using reinforced earth retaining wall using a single strength reinforcement is assumed, optimum design of stiffener, optimal design of superimposed wall and optimum length ratio of reinforcement material of geosynthetics are proposed through safety factor according to reinforcement length ratio (L/H).

이종타겟을 이용한 GZO 박막의 제작

  • Jeong, Yu-Seop;Kim, Sang-Mo;Son, In-Hwan;Kim, Gyeong-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.120-120
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    • 2009
  • Ga doped ZnO (GZO) transparent conductive films were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of GZO($Ga_2O_3$ 3.w.t%) and Zn metal. The GZO thin films were deposited as a various $PO_2$ (oxygen gas content). Base pressure was $2{\times}10^{-6}torr$, and a working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe (Chang-min), a Hall Effect measurement (Ecopia) and an UV/VIS spectrometer (HP). The minimum resistivity of film was $6.5{\times}10^{-4}[{\Omega}-cm]$ and the average transmittance of over 80% was seen in the visible range

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박막 트랜지스터 채널용 IGZO 박막의 제작

  • Kim, Dae-Hyeon;Kim, Sang-Mo;Choe, Hyeong-Uk;Choe, Yeong-Gyu;Kim, Gyeong-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.137-137
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    • 2009
  • Indium Gallium Zinc Oxide (IGZO) thin films for TFT channel were prepared by using a Facing Target Sputtering (FTS) system. To investigate the effect of oxygen on the optical and the electrical properties of amorphous InGaZnO(a-IGZO), we prepared thin films by FTS system in various oxygen atmospheres at room temperature. As-deposited IZTO thin films were investigated by using a UV/VIS spectrometer, an X-ray diffractometer, a Hall Effect measurement system, and an atomic force microscope. The quantitative analysis of the films was carried out by using the energy dispersive X-ray (EDX) technique for the as-deposited film.

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Preparation of Al Cathode for OLED by Sputtering Method (스퍼터링법을 이용한 OLED용 Al 음전극 제작)

  • Keum, Min-Jong;Kim, Kyung-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.8
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    • pp.729-733
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    • 2005
  • Al electrode for OLED was deposited by FTS (Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell (LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar or Ar+kr mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr). The film thickness and I-V curve of Al/cell were measured and evaluated. In the results, when Al thin films were deposited using pure Ar gas, the turn-on voltage of Al/cell was about 11 V. And using the Ar:Kr($75\%:25\%$) mixed gas, the turn-on voltage of Al/cell decreased to about 7 V.

Development of Dress Design using Infra-Syndrome - Focusing on Design Concept of Lingeries - (인프라 현상을 활용한 드레스 디자인 개발 - 화운데이션 모티브를 중심으로 -)

  • 최은희;송미령
    • The Research Journal of the Costume Culture
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    • v.9 no.4
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    • pp.549-561
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    • 2001
  • Modern fashion can be expressed as 'pursuit of cocktail effect', which means not unformed, not bounded by a rule, and mixed with various styles. Among them, the most outstanding trend of style is the'infra-syndrome'which designs underclothes like a ordinary wear, which has outstood since early 1980s. In 1990s, this syndrome made active progress and now facing 21th century, it becomes one of the big trends in fashion. Clothes of infra syndrome are one of attempts for freedom expressed by progressive designers who pursuit new and surrealistic design. The purpose of this study is to maximize the aesthetic beauty of'infra-syndrome'apparel centering on dresses of which designs are notable derived from underclothes. With the sewing techniques using the special facilities of the lingerie-manufacturing industry and making use of new material which can be used far lingerie wear, this research strives to expand new ideas in the lingerie industry as well as to contribute to promoting the dress culture by developing novel lines from a new form of dress and lingerie-foundations of dress suitable for human body.

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Characteristic of Al-In-Sn-ZnO Thin Film Prepared by FTS System with Hetero Targets

  • Hong, Jeong-Soo;Kim, Kyung-Hwan
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.2
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    • pp.76-79
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    • 2011
  • In order to improve efficiency and make a new material thin film, we prepared the Al-In-Sn-ZnO thin film on a glass substrate at room temperature using a Facing Target Sputtering (FTS) system. The FTS system was designed to array two targets that face each other. Two different kinds of targets were installed on the FTS system. We used an ITO ($In_2O_3$ 90wt%, $SnO_2$ 10wt%) target and an AZO (ZnO 98wt%, $Al_2O_3$ 2wt%) target. The AIZTO films were deposited using different applied powers to the targets. The as-deposited AIZTO thin films were investigated using a UV/VIS spectrometer, an X-ray diffratometer (XRD), and Energy Dispersive X-ray spectroscopy (EDX).

Influence of Curing-Form Material on the Chloride Penetration of Off-Shore Concrete

  • Park, Sangjun;Choi, Yeol
    • International Journal of Concrete Structures and Materials
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    • v.6 no.4
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    • pp.251-256
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    • 2012
  • This paper presents an experimental study on the pore and penetration of chloride in seashore concrete depending on types of curing forms. Three types of concretes (Plain concrete, MSF concrete and FA concrete) with four different form types (wood, coating wood, steel and polypropylene film) were examined. The test results show that the air volume in concrete was relatively higher with steel and polypropylene forms than others, and wood form shows the least air volume. The penetration of chloride depending on type of form is showed a wide variability, that is, the values on plain concrete, MSF concrete and FA concrete are 115.2, 125.5 and 121.6 %, respectively. Based on the present study, concrete should be considered the conditions of curing form-type for durable concrete.

A study on the crystallographic properties of ZnO thin films for FBAR (FBAR용 ZnO 박막의 결정학적 특성에 관한 연구)

  • Keum, M.J.;Park, W.H.;Yoon, Y.S.;Choe, Hyeong-Uk;Shin, Y.H.;Choe, Dong-Jin;Kim, K.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.703-706
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    • 2002
  • Piezoelectric thin film such as ZnO and AlN can be applicable to FBAR (Film Bulk Acoustic Resonator) device of thin film type and FBAR can be applicable to MMIC. The characteristic of FBAR device is variable according to the deposition conditions of piezoelectric thin film when preparation of thin film by sputtering method. In this study, we prepared ZnO thin film for FBAR using Facing Targets Sputtering apparatus which can be deposited fine Quality thin film because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. And crystalline and c-axis preferred orientation of ZnO thin film with deposition conditions was investigated by XRD.

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