• Journal of the Korean Solar Energy Society
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• v.28 no.2
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• pp.64-69
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• 2008

As the grid-connected photovoltaic power conditioning systems (PVPCS) are installed in many residential areas, these have raised potential problems of network protection on electrical power system. One of the numerous problems is an Islanding phenomenon. There has been an argument that it may be a non-issue in practice because the probability of islanding is extremely low. However, there are three counter-arguments: First, the low probability of islanding is based on the assumption of 100% power matching between the PVPCS and the islanded local loads. In fact, an islanding can be easily formed even without 100% power matching (the power mismatch could be up to 30% if only traditional protections are used, e.g. under/over voltage/frequency). The 30% power-mismatch condition will drastically increase the islanding probability. Second, even with a larger power mismatch, the time for voltage or frequency to deviate sufficiently to cause a trip, plus the time required to execute a trip (particularly if conventional switchgear is required to operate), can easily be greater than the typical re-close time on the distribution circuit. Third, the low-probability argument is based on the study of PVPCS. Especially, if the output power of PVPCS equals to power consumption of local loads, it is very difficult for the PVPCS to sustain the voltage and frequency in an islanding. Unintentional islanding of PVPCS may result in power-quality issues, interference to grid-protection devices, equipment damage, and even personnel safety hazards. Therefore the verification of anti-islanding performance is strongly needed. In this paper, improved RPV method is proposed through considering power quality and anti-islanding capacity of grid-connected single-phase PVPCS in IEEE Std 1547 ("Standard for Interconnecting Distributed Resources to Electric Power Systems"). And the simulation results are verified.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.590-596
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• 2017

We demonstrated a CNT synaptic transistor by integrating 6,6-phenyl-C61 butyric acid methyl ester(PCBM) molecules as charge storage molecules in a polyimide(PI) dielectric layer with carbon nanotubes(CNTs) for the transistor channel. Specifically, we fabricated and compared three different kinds of CNT-based synaptic transistors: a control device with $Al_2O_3/PI$, a single PCBM device with $Al_2O_3/PI:PCBM$(0.1 wt%), and a double PCBM device with $Al_2O_3/PI:PCBM$(0.1 wt%)/PI:PCBM(0.05 wt%). Statistically, essential device parameters such as Off and On currents, On/Off ratio, device yield, and long-term retention stability for the three kinds of transistor devices were extracted and compared. Notably, the double PCBM device exhibited the most excellent memory transistor behavior. Pulse response properties with postsynaptic dynamic current were also evaluated. Among all of the testing devices, double PCBM device consumed such low power for stand-by and its peak current ratio was so large that the postsynaptic current was also reliably and repeatedly generated. Postsynaptic hole currents through the CNT channel can be generated by electrons trapped in the PCBM molecules and last for a relatively short time(~ hundreds of msec). Under one certain testing configuration, the electrons trapped in the PCBM can also be preserved in a nonvolatile manner for a long-term period. Its integrated platform with extremely low stand-by power should pave a promising road toward next-generation neuromorphic systems, which would emulate the brain power of 20 W.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.154-161
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• 2006

This paper describes the new types of ngative differential resistance (NDR) IC applications which use a monolithic quantum-effect device technology based on the RTD/HBT heterostructure design. As a digital IC, a low-power/high-speed MOBILE (MOnostable-BIstable transition Logic Element)-based D-flip flop IC operating in a non-return-to-zero (NRZ) mode is proposed and developed. The fabricated NRZ MOBILE D-flip flop shows high speed operation up to 34 Gb/s which is the highest speed to our knowledge as a MOBILE NRZ D-flip flop, implemented by the RTD/HBT technology. As an analog IC, a 14.75 GHz RTD/HBT differential-mode voltage-controlled oscillator (VCO) with extremely low power consumption and good phase noise characteristics is designed and fabricated. The VCO shows the low dc power consumption of 0.62 mW and good F.O.M of -185 dBc/Hz. Moreover, a high-speed CML-type multi-functional logic, which operates different logic function such as inverter, NAND, NOR, AND and OR in a circuit, is proposed and designed. The operation of the proposed CML-type multi-functional logic gate is simulated up to 30 Gb/s. These results indicate the potential of the RTD based ICs for high speed digital/analog applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.7
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• pp.784-790
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• 2012

In this paper, an all-digital CMOS ultra-wideband(UWB) pulse generator for high band(6~10 GHz) frequency range is presented. The pulse generator is designed and implemented with extremely low power and low complexity. It is designed to meet the FCC spectral mask requirement by using Gaussian pulse shaping circuit and control the center frequency by using CMOS delay line with shunt capacitor. Measurement results show that the center frequency can be controlled from 4.5 GHz to 7.5 GHz and pulse width is 1.5 ns and pulse amplitude is 310 mV peak to peak at 10 MHz pulse repetition frequency(PRF). The circuit is implemented in 0.13 um CMOS process with a core area of only $182{\times}65um^2$ and dissipates the average power of 11.4 mW at an output buffer with 1.5-V supply voltage. However, the core consumes only 0.26 mW except for output buffer.

• The Transactions of the Korean Institute of Power Electronics
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• v.12 no.6
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• pp.433-440
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• 2007

Recently, the reduction of standby power consumption is significantly issued in electronic and electrical industry for the conservation of environment. In the case of a switched mode power supply (SMPS), it is demanded high efficiency at extremely low output power conditions by consumers. However, it is very different from high efficiency techniques at full load conditions. In addition, many SMPSs are designed as a multi-output circuit for various loads because of cost down. This circuit is difficult to implement both high efficiency and good cross regulation performance, simultaneously. In this paper, secondary side post regulator (SSPR), current mode control method, and power sequence control technique are proposed to reduce standby power consumption and to improve cross regulation performance of the multi-output SMPSs which consist of single or multiple converter. The proposed methods are analyzed by their operational principles and optimal designs verified by experimental results with 110[W] and 270[W] SMPSs.

• Journal of Power Electronics
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• v.12 no.1
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• pp.49-57
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• 2012

This paper presents performance evaluation of an Integrated Starter-Alternator (ISA) prototype with an Interior Permanent Magnet (IPM) synchronous machine under sensor-less operation. To attain a high starting torque at zero speed and in subsequent extremely low speed range, a hybrid signal injection method is proposed. At higher speed, an improved stator flux observer is used for the stator flux estimation. This observer is able to produce accurately-estimated stator flux linkage for high performance Direct Torque and Flux Control (DTFC) implementation. The sensor-less DTFC IPM synchronous machine drive takes full advantage of the capacity of the power converter and fulfills the control specifications for the ISA. The trajectory control algorithm responds rapidly and in a well behaved manner over a wide range of operating conditions. The experimental results verify the feasibility and advantages of the system.

• Journal of the Optical Society of Korea
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• v.19 no.4
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• pp.334-339
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• 2015

Terabit-per-second (Tb/s) transmission capacity for the next generation of long-haul communication networks can be achieved using multicarrier optical super-channel technology. In an elastic orthogonal frequency division multiplexing (OFDM) super-channel transmission system, demultiplexing a portion of an entire spectrum in the form of a subband with minimum power is critically required. A major obstacle to achieving this goal is the analog-to-digital converter (ADC), which is power-hungry and extremely expensive. Without a proper ADC that can work with low power, it is unrealistic to design a 100G coherent receiver suitable for a commercially deployable optical network. Discrete Fourier transform (DFT) is often seen as a primary technique for understanding partial demultiplexing, which can be attained either optically or electronically. If fairly comparable performance can be achieved with an all-optical DFT circuit, then a solution independent of data rate and modulation format can be obtained. In this paper, we investigate two distinct OFDM super-channel receiver models, based on electronic and all-optical DFT-technologies, for partial carrier demultiplexing in a multi-Tb/s transmission system. The performance comparison of the receivers is discussed in terms of bit-error-rate (BER) performance.

• Journal of Surface Science and Engineering
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• v.38 no.2
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• pp.60-64
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• 2005

The ICP-CVD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of $TiB_2$ films. For plasma generation, 13.56 MHz r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of $TiCl_4,\;BCl_3,\;H_2$ and Ar was used for $TiB_2$ deposition. $TiB_2$ films with high hardness (<40 GPa) were obtained at extremely low deposition temperature $(250^{\circ}C)$, and the films hardness increased with ICP power and gas flow ratio of $TiCl_4/BCl_3$. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric $TiB_2$ films and film densification induced by high density plasma.

• Journal of the Earthquake Engineering Society of Korea
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• v.7 no.2
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• pp.85-92
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• 2003

This paper presents an electric power generating system for stand-alone health monitoring sensor unit of bridge structure based on ambient vibration of bridge. In this paper, a novel electric power generator which has minimum effect of armature reaction is proposed. The related mechanical and electrical design equations are obtained, and a pilot generator has been implemented. In addition, the charging system for extremely low generator current is discussed, and some improvements are identified for the system. This investigation reveals that diode characteristics of rectifier is dominant factor in the charging process. Finally, both the simulation, which uses real measurement data of the Namhae bridge as input of the pilot generator, and indoor test are carried out. The results showed the applicability and effectiveness of the stand-alone vibration powered generator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.48-51
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• 2004

In this paper the importance of re-nitridation on a plasma-enhanced chemical-vapor deposited(PECVD) $SiO_2$ stacked on a thermally grown thin-nitrided $SiO_2$ on n-type 4H SiC have been investigated. Without the final re-nitridation process, the leakage current of metaloxidesemiconductor(MOS) was extremely large. It is believed that water and carbon, contamination from the low-thermal budget PECVD process, are the main factors that destroyed the high quality thin-buffer nitrided oxide. After re-nitridation annealing, the quality of the stacked gate oxide was improved. The reasons of this improvement are presented.