JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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High-Speed Digital/Analog NDR ICs Based on InP RTD/HBT Technology

  • Kim, Cheol-Ho (Division of Electrical Engineering, Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST)) ;
  • Jeong, Yong-Sik (Division of Electrical Engineering, Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST)) ;
  • Kim, Tae-Ho (Division of Electrical Engineering, Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST)) ;
  • Choi, Sun-Kyu (Division of Electrical Engineering, Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST)) ;
  • Yang, Kyoung-Hoon (Division of Electrical Engineering, Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST))
  • Published : 2006.09.30
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Abstract

This paper describes the new types of ngative differential resistance (NDR) IC applications which use a monolithic quantum-effect device technology based on the RTD/HBT heterostructure design. As a digital IC, a low-power/high-speed MOBILE (MOnostable-BIstable transition Logic Element)-based D-flip flop IC operating in a non-return-to-zero (NRZ) mode is proposed and developed. The fabricated NRZ MOBILE D-flip flop shows high speed operation up to 34 Gb/s which is the highest speed to our knowledge as a MOBILE NRZ D-flip flop, implemented by the RTD/HBT technology. As an analog IC, a 14.75 GHz RTD/HBT differential-mode voltage-controlled oscillator (VCO) with extremely low power consumption and good phase noise characteristics is designed and fabricated. The VCO shows the low dc power consumption of 0.62 mW and good F.O.M of -185 dBc/Hz. Moreover, a high-speed CML-type multi-functional logic, which operates different logic function such as inverter, NAND, NOR, AND and OR in a circuit, is proposed and designed. The operation of the proposed CML-type multi-functional logic gate is simulated up to 30 Gb/s. These results indicate the potential of the RTD based ICs for high speed digital/analog applications.

Keywords

References

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