• Asia-Pacific Journal of Atmospheric Sciences
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• v.54 no.4
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• pp.599-610
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• 2018

The goal of this study was to statistically analyse the variability of global irradiance and ultraviolet erythemal (UVER) irradiance and their interrelationships with global and UVER irradiance, global clearness indices and ozone. A prediction of short-term UVER solar irradiance values was also obtained. Extreme values of UVER irradiance were included in the data set, as well as a time series of ultraviolet irradiance variability (UIV). The study period was from 2005 to 2014 and approximately 250,000 readings were taken at 5-min intervals. The effect of the clearness indices on global irradiance variability (GIV) and UIV was also recorded and bi-dimensional distributions were used to gather information on the two measured variables. With regard to daily GIV and UIV, it is also shown that for global clearness index ($k_t$) values lower than 0.6 both global and UVER irradiance had greater variability and that UIVon cloud-free days ($k_t$ higher than 0.65) exceeds GIV. To study the dependence between UIVand GIV the ${\chi}^2$ statistical method was used. It can be concluded that there is a 95% probability of a clear dependency between the variabilities. A connection between high $k_t$ (corresponding to cloudless days) and low variabilities was found in the analysis of bidimensional distributions. Extreme values of UVER irradiance were also analyzed and it was possible to calculate the probable future values of UVER irradiance by extrapolating the values of the adjustment curve obtained from the Gumbel distribution.

• Electronics and Telecommunications Trends
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• v.13 no.5 s.53
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• pp.38-52
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• 1998

Phase-shifting masks (PSM), optical proximity correction (OPC), off-axis illumination (OAI), annular illumination (AI)의 리소그래피 분해능 향상 기법과 deep ultraviolet photoresist의 개발 및 리소그래피의 최근 기술 동향을 요약 소개한다. DUV 리소그래피의 대안으로 관심을 끌고 있는 scattering with angular limitation projection electron-beam lithography (SCALPEL), extreme ultraviolet lithography (EUVL), X-ray lithography (XRL), ion projection lithography (IPL) 등의 새로운 리소그래피 기술들의 기본 원리와 최근 기술 동향도 소개하였다. 리소그래피는 반도체 공정에 있어서 가장 중요한 부분을 차지하기 때문에 리소그래피의 최근 기술 동향을 검토해 봄으로써 국내 리소그래피 장비 산업의 기술 개발을 위한 방향 설정에 도움이 될 것으로 생각한다.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.34-42
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• 2021

Recent cleaning technologies of mask in extremely ultraviolet semiconductor processes were reviewed, focused on newly developed issues such as particle size determination or hydrocarbon and tin contaminations. In detail, critical particle size was defined and proposed for mask cleaning where nanosized particles and its various shapes would result in surface atomic ratio increase vigorously. A new cleaning model also was proposed with amphoteric behavior of electrolytically ionized water which had already shown excellent particle removing efficiency. Having its non-equilibrium and amphoteric properties, electrolyzed ion water seemed to oxidize contaminant surface selectively in nano-scale and then to lift up oxidized ones from mask surface very effectively. This assumption should be further investigated in future in junction with hydrogen bonding and cluster of water molecules.

• Journal of The Korean Astronomical Society
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• v.42 no.6
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• pp.145-153
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• 2009

We present measurements of diffuse interstellar $H_2$ absorption lines in the continuum spectra of 10 early-type stars. The data were observed with the Berkeley Extreme and Far-Ultraviolet Spectrometer (BEFS) of the ORFEUS telescope on board the ORFEUS-SPAS I and II space-shuttle missions in 1993 and 1996, respectively. The spectra extend from the interstellar cutoff at 912 $\AA$ to about 1200 $\AA$ with a resolution of ~ 3000 and statistical signal-to-noise ratios between 10 and 65. Adopting Doppler broadening velocities from high-resolution optical observations, we obtain the $H_2$ column densities of rotational levels J" = 0 through 5 for each line of sight. The kinetic temperatures derived from J" = 0 and 1 states show a small variation around the mean value of 80 K, except for the component toward HD 219188, which has a temperature of 211 K. Based on a synthetic interstellar cloud model described in our previous work, we derive the incident UV intensity IUV and the hydrogen density $n_H$ of the observed components to be -0.4 $\leq$ log $I_{UV}\leq2.2$ and $6.3{\leq}n_H2500cm^{-3}$, respectively.

• International Journal of Railway
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• v.1 no.3
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• pp.113-116
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• 2008

The long-tenn exposure of polymeric composite materials to extreme-use environments, such as pressure, temperature, moisture, and load cycles, results in changes in the original properties of the material. In this study, the effect of combined environmental factors such as ultraviolet ray, high temperature and high moisture on mechanical and thermal analysis properties of glass fabric and phenolic composites are evaluated through a 2.5 KW accelerated environmental aging tester. The environmental factors such as temperature, moisture and ultraviolet ray applied of specimens. A xenon-arc lamp is utilized for ultraviolet light and exposure time of up to 3000 hours are applied. Several types of specimens - tensile, bending, and shear specimens that are warp direction and fill direction are used to investigate the effects of environmental factors on mechanical properties of the composites. Mechanical degradations for tensile, bending and shear properties are evaluated through a Universal Testing Machine (UTM). Also, storage shear modulus, loss shear modulus and tan a are measured as a function of exposure time through a Dynamic Mechanical Analyzer (DMA). From the experimental results, changes in material properties of glass fabric and phenolic composites are shown to be slightly degraded due to combined environmental effects.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.106-107
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• 2002

Extreme ultraviolet (EUV) radiation of wavelength $\lambda$~10 nm or photon energy hv~100 eV is presently a blank region in the electromagnetic spectrum where applications are concerned. This is because no powerful sources were available until when intense-laser-produced plasmas are available. Both a new laboratory-sized source of EUV radiation and its new applications in lithography of semiconductor devices have been developed. (omitted)

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.411-411
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.295-295
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.475-475
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• 2010

We have generated Ar plasma in dense plasma focus device with coaxial electrodes for extreme ultraviolet (EUV) lithography and investigated an emitted visible light for electro-optical plasma diagnostics. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas of pressure 8 mTorr. The inner surface of the cylindrical cathode has been attatched by an acetal insulator. Also, the anode made of tin metal. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature and density of the coaxial plasma focus could be obtained by Stark broadening of optical emission spectroscopy (OES). The Lorentzian profile for emission lines of Ar I of 426.629 nm and Ar II of 487.99 nm were measured with a visible monochromator. And the electron density has been estimated by FWHM (Full Width Half Maximum) of its profile. To find the exact value of FWHM, we observed the instrument line broadening of the monochromator with a Hg-Ar reference lamp. The electron temperature has been calculated using the two relative electron density ratios of the Stark profiles. In case of electron density, it has been observed by the Stark broadening method. This experiment result shows the temporal behavior of the electron temperature and density characteristics for the focused plasma. The EUV emission signal whose wavelength is about 6 ~ 16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD). The result compared the electron temperature and density with the temporal EUV signal. The electron density and temperature were observed to be $10^{16}\;cm^{-3}$ and 20 ~ 30 eV, respectively.

• Journal of Astronomy and Space Sciences
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• v.18 no.2
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• pp.145-152
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• 2001

For the research of solar EUV (extreme ultraviolet) radiation, we have designed a small-sifted engineering model of solar EUV telescope, which is suitable for a Korean satellite. The EUV sole. telescope was designed to observe the sun at $584.3AA$(He I) and $629.7AA$(OV) The optical system is an f/8 Ritchey-Chr rien, and the effective diameter and focal length are 80mm and 640mm, respectively. The He I and 0V filters are loaded in a filter wheel. In the detection part, the MCP (Microchannel Plate) type is Z-stack, and the channel-to-diameter radio is 40:1. MCP and CCD are connected by fiber optic taper. A commercial optical design software is used for the analysis of the optical system design.