• Bulletin of the Korean Chemical Society
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• 제22권11호
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• pp.1243-1247
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• 2001

The water-soluble poly(aminoaryloxy-methylamino phosphazene) has been synthesized and investigated as a polymeric carrier species for the covalent attachment of biologically active agents. The cyclic trimeric model systems were utilized for the synthesis of polymeric analogues containing bioactive side groups. The sodium salt of 4-acetamidophenol was first allowed to react with (NPCl2)3 or (NPCl2)n and was then treated with excess methylamine to yield derivatives of type [NP(NHCH3)x(OArNHCOCH3)y]3 or [NP(NHCH3)x(OArNHCOCH3)y]n. The 4-acetamido groups were then hydrolyzed to 4-aminophenoxy units with potassium tert-butoxide. Coupling reactions between amino group and N-acetylglycine was accomplished with the use of dicyclohexylcarbodiimide. Their properties and structural characterization are discussed.

• 한국응용과학기술학회지
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• 제17권3호
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• pp.174-177
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• 2000

The effect of a-sexithiophene(${\alpha}-6T$) layers on the light emitting diode (LED) were studied. The ${\alpha}-6T$ was used for a buffer layer in electroluminescent (EL) devices. Enhanced carrier (hole) injection and improved emission efficiency were observed. Carrier injection characteristics were investigated as a function of ${\alpha}-6T$ later thickness. The efficiency of the electroluminescence was proportional to the thickness of ${\alpha}-6T$ layer. The highest efficiency was observed 600A of ${\alpha}-6T$ later, which was about 1.5 times higher than that of device without ${\alpha}-6T$ later. The device with a-6T showed an operation voltage lowered by 2V. The ${\alpha}-6T$ layer can substitute hole blocking layer, and control charge injection properties.

• 한국전기전자재료학회논문지
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• 제21권8호
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• pp.687-694
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• 2008

This paper is focused on the improvement of MOS device reliability related to deuterium process. The injection of deuterium into the gate oxide film was achieved through two kind of method, high-pressure annealing and low-energy implantation at the back-end of line, for the purpose of the passivation of dangling bonds at $SiO_2/Si$ interface. Experimental results are presented for the degradation of 3-nm-thick gate oxide ($SiO_2$) under both negative-bias temperature instability (NBTI) and hot-carrier injection (HCI) stresses using P and NMOSFETs. Annealing process was rather difficult to control the concentration of deuterium. Because when the concentration of deuterium is redundant in gate oxide excess traps are generated and degrades the performance, we found annealing process did not show the improved characteristics in device reliability, compared to conventional process. However, deuterium ion implantation at the back-end process was effective method for the fabrication of the deuterated gate oxide. Device parameter variations under the electrical stresses depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to conventional process. Our result suggests the novel method to incorporate deuterium in the MOS structure for the reliability.

• 한국통신학회논문지
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• 제32권3C호
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• pp.338-347
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• 2007

본 논문에서는 순환 보호 구긴(cyclic-prefix)을 사용하는 시공간 블록 부호 (STBC: Space-Time Block-Coding) 단일 반송파 시스템에서 향상된 채널 성능을 위한 가중된 블록 적응형 주파수 영역 채널 추정기를 제안한다. 제안된 채널 추정기 구조는 필터 입력 신호에 대해 STBC로 구성된 블록을 형성하며, 이후 형성된 입력 블록에 대해 사후 오차 (a posteriori error)를 이용하는 가중된 LS (least-square) 규준을 적용하여 알고리즘을 유도한다. 또한 정적 채널에서 steady-state EMSE (excess mean-square error) 분석을 통해 블록 길이가 늘어남에 따라 EMSE를 분석한다. 전산 모의실험에서는 시변 TU (typical urban) 채널에서 블록 길이를 증가시킬수록 제안한 채널 추정기는 기존 NLMS와 RLS 채널 추정기들 보다 우수한 성능을 나타냄을 확인 할 수 있다.

• 한국재료학회지
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• 제25권2호
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• pp.68-74
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• 2015

The porous $Mg_3Sb_2$ based compounds with 60~70% of relative density were prepared by powder compaction at room temperature and reactive liquid phase sintering at 1023 K for 4hrs. The stoichiometric $Mg_3Sb_2$ compounds were synthesized from elemental Sb and Mg powder in the mixing range of 61~63 at% Mg. The increased scattering effect due to the micro-pores reduced the mobility of the charge carrier and the phonon, which caused the electrical conductivity and the thermal conductivity to decrease, respectively. But the scattering effect was greater for the electrical conductivity than for the thermal conductivity. Excess Mg alloyed in the $Mg_3Sb_2$ compounds decreased the electrical conductivity, but had no effect on the thermal conductivity. On the other hand, the large increase of the Seebeck coefficient was the result of a decrease in the charge carrier density due to the excess Mg. Dimensionless figure of merit of the porous $Mg_3Sb_2$ compound reached a maximum value of 0.28 at 61 at% Mg. The obtained value was similar to that of $Mg_3Sb_2$ compounds having little pores.

• ETRI Journal
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• 제15권3_4호
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• pp.61-69
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• 1994

A new analytical model for the base current of Si/SiGe/Si heterojunction bipolar transistors(HBTs) has been developed. This model includes the hole injection current from the base to the emitter, and the recombination components in the space charge region(SCR) and the neutral base. Distinctly different from other models, this model includes the following effects on each base current component by using the boundary condition of the excess minority carrier concentration at SCR boundaries: the first is the effect of the parasitic potential barrier which is formed at the Si/SiGe collector-base heterojunction due to the dopant outdiffusion from the SiGe base to the adjacent Si collector, and the second is the Ge composition grading effect. The effectiveness of this model is confirmed by comparing the calculated result with the measured plot of the base current vs. the collector-base bias voltage for the ungraded HBT. The decreasing base current with the increasing the collector-base reverse bias voltage is successfully explained by this model without assuming the short-lifetime region close to the SiGe/Si collector-base junction, where a complete absence of dislocations is confirmed by transmission electron microscopy (TEM)[1].The recombination component in the neutral base region is shown to dominate other components even for HBTs with a thin base, due to the increased carrier storage in the vicinity of the parasitic potential barrier at collector-base heterojunction.

• Journal of Microbiology and Biotechnology
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• 제29권11호
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• pp.1769-1776
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• 2019

Ethyl (S)-3-hydroxy-3-(2-thienyl) propanoate ((S)-HEES) acts as a key chiral intermediate for the blockbuster antidepressant drug duloxetine, which can be achieved via the stereoselective bioreduction of ethyl 3-oxo-3-(2-thienyl) propanoate (KEES) that contains a 3-oxoacyl structure. The sequences of the short-chain dehydrogenase/reductases from Chryseobacterium sp. CA49 were analyzed, and the putative 3-oxoacyl-acyl-carrier-protein reductase, ChKRED12, was able to stereoselectively catalyze the NADPH-dependent reduction to produce (S)-HEES. The reductase activity of ChKRED12 towards other substrates with 3-oxoacyl structure were confirmed with excellent stereoselectivity (>99% enantiomeric excess) in most cases. When coupled with a cofactor recycling system using glucose dehydrogenase, the ChKRED12 was able to catalyze the complete conversion of 100 g/l KEES within 12 h, yielding the enantiopure product with >99% ee, showing a remarkable potential to produce (S)-HEES.

• 한국재료학회지
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• 제22권10호
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• pp.508-512
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• 2012

ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at $200^{\circ}C$ at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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• pp.39-43
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• 2001

In this paper, excess minority carrier distribution in drift and buffer layers and accumulated charges for PT IGST have been, for the first time, analytically expressed with different transient times, lifetimes and temperatures. Furthermore those parameters are also expressed with temperature to predict the transient response which are critical to the real operation. Active base region has been chosen to extract the temperature dependency of the device by including the buffer layer which is important but neglected due to the complexity up to now.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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• pp.26-30
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• 2001

In this paper, transient characteristics of IGBT has been analytically solved to express the excess minority carrier distribution in active base region and the output voltage. Non-Punch Through(NPT) structure has been selected to prove the validity of the model. It is based on the equivalent circuit of MOSFET which supplies a low gain and a high level injection to the base of BJT. None of the quasi static conditions have been assumed to trace the transient characteristics. The basic elements of the model have been derived from the ambipolar transport theory. Theoretical predictions of the output voltages have been obtained with different lifetimes and compared with experimental and theoretical results available in the literature. From the analytical approach, good agreement has been obtained to provide reliable and fast output of the device.