• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.254-254
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• 2011

The memories with nano-particles are very attractive because they are promising candidates for low operating voltage, long retention time and fast program/erase speed. In recent, various nano-floating gate memories with metal-oxide nanocrystals embedded in organic and inorganic layers have been reported. Because of the carrier generation in semiconductor, induced photon pulse enhanced the program/erase speed of memory device. We studied photo-induced electrical properties of these metal-oxide nanocrystal memory devices. At first, 2~10-nm-thick Sn and In metals were deposited by using thermal evaporation onto Si wafer including a channel with $n^+$ poly-Si source/drain in which the length and width are 10 ${\mu}m$ each. Then, a poly-amic-acid (PAA) was spin coated on the deposited Sn film. The PAA precursor used in this study was prepared by dissolving biphenyl-tetracarboxylic dianhydride-phenylene diamine (BPDA-PDA) commercial polyamic acid in N-methyl-2-pyrrolidon (NMP). Then the samples were cured at 400$^{\circ}C$ for 1 hour in N atmosphere after drying at 135$^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was followed by using a thermal evaporator, and then the gate electrode was defined by photolithography and etching. The electrical properties were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. Also, the optical pulse for the study on photo-induced electrical properties was applied by Xeon lamp light source and a monochromator system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.523-523
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• 2012

As the wafer geometric requirements continuously complicated and minutes in tens of nanometers, the expectation of real-time add-on sensors for in-situ plasma process monitoring is rapidly increasing. Various industry applications, utilizing plasma impedance monitor (PIM) and optical emission spectroscopy (OES), on etch end point detection, etch chemistry investigation, health monitoring, fault detection and classification, and advanced process control are good examples. However, process monitoring in semiconductor manufacturing industry requires non-invasiveness. The hypothesis behind the optical monitoring of plasma induced ion current is for the monitoring of plasma induced charging damage in non-invasive optical way. In plasma dielectric via etching, the bombardment of reactive ions on exposed conductor patterns may induce electrical current. Induced electrical charge can further flow down to device level, and accumulated charges in the consecutive plasma processes during back-end metallization can create plasma induced charging damage to shift the threshold voltage of device. As a preliminary research for the hypothesis, we performed two phases experiment to measure the plasma induced current in etch environmental condition. We fabricated electrical test circuits to convert induced current to flickering frequency of LED output, and the flickering frequency was measured by high speed optical plasma monitoring system (OPMS) in 10 kHz. Current-frequency calibration was done in offline by applying stepwise current increase while LED flickering was measured. Once the performance of the test circuits was evaluated, a metal pad for collecting ion bombardment during plasma etch condition was placed inside etch chamber, and the LED output frequency was measured in real-time. It was successful to acquire high speed optical emission data acquisition in 10 kHz. Offline measurement with the test circuitry was satisfactory, and we are continuously investigating the potential of real-time in-situ plasma induce current measurement via OPMS.

• 한국정밀공학회지
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• 제17권8호
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• pp.180-188
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• 2000

Fine multi-hole sheet metal product(FMSMP) is a specific metal plate which is used in color TV and computer monitor. Processes of manufacturing FMSMP are generally composed of coating cleaning exposure and etching processes. After a thin metal plate is made by rolling photosensitive liquid is coated on the metal plate in coating process. Then the coated thin metal plate consecutively passes through exposure process in which upper and lower glasses are compressed by vacuuming the space between glasses and metal plate. In this lowered glasses are compressed by vacuuming the space between glasses and metal plate. In this lowered vacuum state certain part of metal plate is desirably exposed to light and will be etched into forming lots of well-arranged holes with a specific diameter, nowadays to manufacture FMSMP of 17 inch braun tube 80 second is required for complete vacuum but 35 second is applied to manufacture FMSMP in reality. In the present study vacuuming time is tried to reduce for improvement of productivity by analyzing vacuum system and proposing several solutions, for faster vacuuming speed degree of vacuum state between glasses and metal plate is improved by the proposed method and experiments using the proposed method are performed for verification. In addition microstructure of FMSMP is investigated to prevent stain phenomena and to improve quality of the product.

• 대한금속재료학회지
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• 제49권5호
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• pp.388-394
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• 2011

High speed copper filling into TSV (through-silicon-via) for three dimensional stacking of Si chips was investigated. For this study, a tapered via was prepared on a Si wafer by the DRIE (deep reactive ion etching) process. The via had a diameter of 37${\mu}m$ at the via opening, and 32${\mu}m$ at the via bottom, respectively and a depth of 70${\mu}m$. $SiO_2$, Ti, and Au layers were coated as functional layers on the via wall. In order to increase the filling ratio of Cu into the via, a PPR (periodic pulse reverse) wave current was applied to the Si chip during electroplating, and a PR (pulse reverse) wave current was applied for comparison. After Cu filling, the cross sections of the vias was observed by FE-SEM (field emission scanning electron microscopy). The experimental results show that the tapered via was filled to 100% at -5.85 mA/$cm^2$ for 60 min of plating by PPR wave current. The filling ratio into the tapered via by the PPR current was 2.5 times higher than that of a straight via by PR current. The tapered via by the PPR electroplating process was confirmed to be effective to fill the TSV in a short time.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1849-1851
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• 1999

The PDP(Plasma Display Panel) barrier rib was fabricated by focused $Ar^+$ laser ($\lambda$=514nm) and Nd:YAG($\lambda$=532, 266 nm) laser irradiation. The depth of the etched groove increases with increasing a laser fluence. and decreasing a scan speed. Using the second harmonic of the Nd:YAG laser, the threshold laser fluence was $6.5mJ/cm^2$ for the sample of PDP barrier rib dried at $120^{\circ}C$. The thickness of $150{\mu}m$ of the sample on the glass was etched without any damage on the glass substrate by fluence of $19.5J/cm^2$. The barrier rib sample on hot plate was etched by Nd:YAG laser(532 nm) as increasing a temperature of the sample. In this case, the etch rate was $95{\mu}m/s$, $190{\mu}m/s$ at room temperature, $175^{\circ}C$ respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.294.2-294.2
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• 2016

Graphene, a sigle atomic layered structure of graphite, has drawn many scientific interests for attractive future electronics and optoelectronics beyond silicon-based technology because of its robust physical, optical, and electrical properties. But high metal-graphene contact resistance prevents the successful integration of high speed graphene devices and circuits, although pristine graphene is known to have a novel carrier transport property. Meanwhile, in the recently reported metal-graphene contact studies, there are many attempts to reduce the metal-graphene contact resistance, such as doping and one-dimensional edge contact. However, there is a lack of quantitative analysis of the edge contact scheme through variously designed patterns with different metal contact. We first investigate the effets of edge contact (metal-graphene interface) on the contact resistance in terms of edge pattern design through patterning (photolithography + plasma etching) and electral measurements. Where the contact resistance is determined using the transfer length method (TLM). Finally, we research the role of metal-kind (Palladium, Copper, and Tianium) on the contact resistance through the edge-contacted devices, eventually minimizing contact resistance down to approximately $23{\Omega}{\cdot}{\mu}m$ at room temperature (approximately $19{\Omega}{\cdot}{\mu}m$ at 100 K).

• 대한치과기공학회지
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• 제41권4호
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• pp.279-285
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• 2019

Purpose: The dental CAD / CAM system has been popular with the development of the digital dental industry. Zirconia is a typical material in dental CAD / CAM systems. Zirconia crowns are classified into single layer and double layer. This study is about the double layer crown of zirconia. The surface roughness, bond strength and fracture patterns of the zirconia surface were observed. Methods: Zirconia blocks were cut using a low speed cutter. Sintered to form a plate shape (6mm × 6mm × 3mm). The prepared specimens were surface treated in four ways. Surface roughness and bond strength were measured. And the fracture pattern was observed. Results: Result of surface treatment of zirconia. The surface roughness test results were as ET 2.87 ㎛, ST 2.67 ㎛, LT 2.44 ㎛, AT 2.41 ㎛, CN 2.08 ㎛ order. Bond Strength results were as LT 25.09 MPa, AT 23.27 MPa, ST 21.27 MPa, ET 21.09 MPa, CN 16.12 MPa order. Fracture patterns showed cohesive failure of 25-50% of the bond area. Conclusion: Surface roughness, bond strength and fracture pattern of the zirconia surface were observed. Etching the surface treatment of zirconia materials has been shown to affect the surface roughness. Zirconia special binder treatment has been shown to affect the bond strength improvement.

• 한국결정학회지
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• 제2권2호
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• pp.32-40
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• 1991

The effects of compositional variation, rotation speel and pulling rate on the growth of optical quality Bi120e02(1 crystals were examined. It was found to flatten the shape of crystal-melt interface for yowing a single crystals less than about 30mm in diameter at the rotation speed of 50rpm. Diameter of crystals with flat interface was increased as the pulling rate. The precipitation of Bi40e3012 phase set limits to pulling rate of BGO crystals. Precipitate-free BGO crystals were grown under pulling rate of 2mm l hr which released the stress resulted from too hi어 Pulling rate, and from 6. IBi203·GeO2 batch composition obtained by addition of 0.1 mole Bi203 into Bi-deficient melts to fill up the deficiency resulted from gradual volatilization of Bi2O). The pale-yellow colored crystals had good quality in that dislocation density was less than 103pits/cm, and it also exhibited transmittance of 70% and optical activity of 23°/mm. and SAW velosity was measured 1700m/sec on 111 cut 110 propagating BGO crystals. The SAW filter with electrode thickness of 9.8um was fabricated by using the electron beam and dry etching technique, it makes Bi12GeO20 devices intersting for color TV IF with half device size.

• E2M - 전기 전자와 첨단 소재
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• 제9권6호
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• pp.593-599
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• 1996

Laser scribing of silicon plays an important role in metallization including the grid pattern and the front surface geometry which means aspect ratio of metal contacts. To make a front metal electrode of buried contact solar cell, we used ND:YAG lasers that deliver average 3-4W at TEM$\_$00/ mode power to sample stage. The Q-switched Nd:YAG laser of 1.064 gm wavelength was used for silicon scribing with 20-40.mu.m width and 20-200.mu.m depth capabilities. After silicon slag etching, the groove width and depth for buried contact solar cell are -20.mu.m and 30-50.mu.m respectively. Using MEL 40 Nd:YAG laser system, we can scribe the silicon surface with 18-23.mu.m width and 20-200.mu.m depth controlled by krypton arc lamp power, scan speed, pulse frequency and beam focusing. We fabricated a buried contact Silicon Solar Cell which had an energy conversion efficiency of 18.8 %. In this case, the groove width and depth are 20.mu.m and 50.mu.m respectively.

• 전자공학회논문지CI
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• 제42권5호
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• pp.31-40
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• 2005

본 연구에서는 웨이퍼의 식각, 세정, 연마 공정에 사용되는 매엽식 세정장비의 동작순서의 시뮬레이션과 단위 시간당 처리량 측정 방법에 대해 연구한다. 유한상태기계를 바탕으로 스케쥴링 알고리즘에 따른 로봇의 상태를 정의하여 시뮬레이션 모델을 구축하였으며, 이에 따른 시뮬레이션 수행을 통해 세정장비의 시간당 처리량을 측정하였다. 본 연구에서 제시한 시뮬레이션 기법을 통해 레시피와 로봇의 동작속도에 따라 세정장비의 단위시간당 처리량을 측정하고, 처리량을 극대화 할 수 있는 레시피와 로봇의 동작순서를 찾아낼 수 있다.