• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.261-266
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• 1998

In developing the high density memory device, the etching of fine pattern is becoming increasingly important. Therefore, definition of ultra fine line and space pattern and minimization of damage and contamination are essential process. Also, the high density plasma in low operating pressure is necessary. The candidates of high density plasma sources are electron cyclotron resonance plasma, helicon wave plasma, helical resonator, and inductively coupled plasma. In this study, planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, flow rate, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.563-567
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• 2000

We presented the etch results of indium-tin oxide thin films by using SF$_{6}$/O$_2$gas electron cyclotron resonance plasma and conducted X-ray phtoelectron spectroscopy and quadrupole mass spectrometer analyses for the etch characteristics. The etch rate of the films was greatly dependent on that of oxygen which was the major constituent element of the films. The oxygen was removed by the forms like $O_2$or SOF$_2$. We examined the ratio of atomic content of O and In and the change of this ratio was related to the removal rate of InF$_{x}$ and the S-metal bonding.ing.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.155-155
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• 2011

Dual coil을 사용하는 상용 AMAT DPS II 300 mm Centura 장비의 antenna의 전류비를 조절하여 $SiO_2$의 식각 균일도를 평가하였다. Inner turn과 outer turn의 흐르는 전류비를 분배 capacitor로 조절하여 16.9 %의 이온 전류 밀도 분포를 확인하였고, 투입 전력에 따라 200 W에서 12 %, 800 W에서 9 %로 점차 감소하는 경향을 확인하였다. 이때 300 mm wafer의 반지름 방향으로의 식각 균일도는 3 %로 측정되었고, FRC (flow ratio control)는 0.5에서 가장 균일한 결과를 얻었다.

• Journal of Sensor Science and Technology
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• v.15 no.4
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• pp.245-250
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• 2006

In this paper, glass cap wafer for MEMS device package is fabricated by using sand blaster dry etcher and Its surface is studied. The surface of dry etched glass is analyzed by using SEM, and many glass particles and micro cracks are observed. If these kind of particles were dropped from glass to the surface of device, It would make critical failure to the operation of device. So, several cleaning and etching methods are induced to remove these kinds of dormant failure mode and optimized condition is found out.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.153-156
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• 2005

원자층 증착 (atomic layer deposit : ALD) 방식으로 증착한 $Al_2O_3$의 건식식각 특성을 연구하였다. 전자 싸이클로트론 공진 (electron cyclotron resonance : ECR) 방식의 건식식각장치에서 source power, bias power, 압력 그리고 $Cl_2$ 가스를 변수로 하여 $Al_2O_3$의 식각속도와 Poly-Si 의 $Al_2O_3$에 대한 선택비를 측정하였다. bias power가 감소할수록 그리고 압력이 증가할수록 $Al_2O_3$의 식각속도는 감소하였고 Poly-Si 의 $Al_2O_3$에 대한 선택비는 증가하였다. 이 특성을 이용하여 TiN/$Al_2O_3$/Poly-Si 구조의 캐패시터와 Periphery 회로영역의 레지스터를 $Al_2O_3$를 식각 정지막으로 이용하여 구현하였다.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.189-194
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• 2017

Effects of gas injection scheme and rf driving current configuration in a dual turn inductively coupled plasma (ICP) system were analyzed by 3D numerical simulation using CFD-ACE+. Injected gases from a tunable gas nozzle system (TGN) having 12 horizontal and 12 vertical nozzles showed different paths to the pumping surface. The maximum velocity from the nozzle reached Mach 2.2 with 2.2 Pa of Ar. More than half of the injected gases from the right side of the TGN were found to go to the pump without touching the wafer surface by massless particle tracing method. Gases from the vertical nozzle with 45 degree slanted angle soared up to the hottest region beneath the ceramic lid between the inner and the outer rf turn of the antenna. Under reversed driving current configuration, the highest rf power absorption region were separated into the two inner islands and the four peaked donut region.

• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.35-39
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• 2009

A novel Helmholtz coil inductively coupled plasma(H-ICP) etcher is proposed and characterized for deep nano-scale CMOS technology. Various hardware tests are performed while varying key parameters such as distance between the top and bottom coils, the distance between the chamber ceiling and the wafer, and the chamber height in order to determine the optimal design of the chamber and optimal process conditions. The uniformity was significantly improved by applying the optimum conditions. The plasma density obtained with the H-ICP source was about $5{\times}10^{11}/cm^3$, and the electron temperature was about 2-3 eV. The etching selectivity for the poly-silicon gate versus the ultra-thin gate oxide was 482:1 at 10 sccm of $HeO_2$. The proposed H-ICP was successfully applied to form multiple 60-nm poly-silicon gate layers.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.516-521
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• 2001

Dry etching of Si wafer and $SiO_2$ layers was performed using He/Cl$_2$ mixture plasma by diode-type reactive ion etcher (RIE) system. For Si etching, the Cl molecules react with the Si molecules on the surface and become chemically stable, indicating that the reactants need energetic ion bombardment. During the ion assisted desorption, energetic ions would damage the photoresist (PR) and produce the bad etch Si-profile. Moreover, we have examined the characteristics of the Cl-Si reaction system, and developed the new fabrication procedures with a $Cl_2$/He mixture for Si and $SiO_2$-etching. The developed novel fabrication procedure allows the RIE to be unexpensive and useful a Si deep etching system. Since the etch rate was proved to increase linearly with fHe and the selectivity of Si to $SiO_2$ etch rate was observed to be inversely proportional to fHe.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.424-424
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• 2009

그라핀은 밴드갭이 없어서 세미메탈의 성질을 띠므로 초고속 RF 소자에는 응용이 가능하지만, 현재 사용되는 반도체 칩에 사용하기가 불가능하다. 그러나 그라핀을 매우 좁은 리본 형태로 만들 경우 밴드갭이 생기고 이에 따라 반도체특성을 뛰게 된다. 이러한 특성은 시뮬레이션을 통해서만 이해되다가 2007년 P. Kim이 그라핀 나노리본의 밴드캡이 리본의 폭이 좁아짐에 따라 증가함을 실험적으로 최초로 발표하였다. 하지만 그라핀을 나노리본형태로 식각 방법에 대해서는 정확히 연구되지 않았다. 따라서 본 연구에서는 $O_2$ plasma ashing 방법을 이용하여 그라핀을 식각하는 방법에 대해 연구하였다. 먼저 Si기판을 initial cleaning 한 후, highly-oriented pyrolytic graphite(HOPG)를 이용하여 기존의 mechanical exfoliation 방식을 통해 그라핀을 형성하였다. Photo-lithography 방법을 통하여 패터닝한 후, 그라핀을 식각하기 위하여 Reactive Ion Etcher (RIE) system을 이용한 $O_2$ plasma ashing을 50 W에서 1 분간 실시하였다. 다시 image reverse photo-lithography 과정과 E-beam evaporator system를 통해서 Al 전극을 형성하여 graphene-FET를 제작하였고, 광학 현미경과 AFM (Atomic force microscope)을 통해 두께를 확인하였다. 본 연구를 통하여 $O_2$ plasma ashing을 이용하여 쉽게 그라 E을 식각할 수 있음을 확인 하였으며, 제작된 소자의 전기적 특성에 대해서 현재 실험중에 있다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.68-72
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• 2008

AlGaInP high-brightness LEDs(HB-LEDs) have gained importance a variety of application operating in the red, orange, yellow and yellow-green wavelength. The light generated from inside LED chips should be emitted to the air through the surfaces of the chips. However, because of the differences between the semiconductor and air or epoxy's refractive index, some of the light was blocked so that caused lowering external quantum efficiency. In this study, nano-scale roughness on the top-GaP layer of AlGaInP epitaxial wafer was fabricated to improve' the brightness of AlGaInP LEDs. Nano-scale roughness was made by ICP dry etcher. Our AlGaInP LEDs with nano-scale roughness has higher brightness (about 28.5 %) than standard AlGaInP LEDs.