Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Etch characteristics of ITO(Indium Tin Oxide)using ${SF_6}/{O_2}$-gas ECR(Electron Cyclotron Resonance) plasmas

ECR을 이용한 ${SF_6}/{O_2}$ 가스 플라즈마에 의한 ITO의 식각 특성연구

  • 권광호 (한서대학교 전자공학과) ;
  • 강승열 (한국전자통신연구원 회로 소자연구소) ;
  • 김곤호 (한양대학교 물리학과) ;
  • 염근영 (성균관대학교 재료공학과)
  • Published : 2000.07.01
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Abstract

We presented the etch results of indium-tin oxide thin films by using SF$_{6}$/O$_2$gas electron cyclotron resonance plasma and conducted X-ray phtoelectron spectroscopy and quadrupole mass spectrometer analyses for the etch characteristics. The etch rate of the films was greatly dependent on that of oxygen which was the major constituent element of the films. The oxygen was removed by the forms like $O_2$or SOF$_2$. We examined the ratio of atomic content of O and In and the change of this ratio was related to the removal rate of InF$_{x}$ and the S-metal bonding.ing.

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References

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