Characteristics Modeling of Junction Barrier Schottky Diodes for ultra high breakdown voltage with 4H-SiC substrate (탄화규소(4H) 기판의 초고내압용 접합 장벽 쇼트키 다이오드의 특성 모델링)
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- Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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- 2007.10a
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- pp.200-203
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- 2007