• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.11-11
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• 2011

In this talk, I will discuss roles of pseudo vector and scalar potential in changing physical properties of graphene systems. First, graphene under small uniaxial strain is shown to be described by the generalized Weyl's Hamiltonian with inclusion of pseudo vector and scalar potential simultaneously [1]. Thus, strained graphene is predicted to exhibit velocity anisotropy as well as work function enhancement without any gap. Second, if homogeneous strains with different strengths are applied to each layer of bilayer graphene, transverse electric fields across the two layers can be generated without any external electronic sources, thereby opening an energy gap [2]. This phenomenon is made possible by generation of inequivalent pseudo scalar potentials in the two graphene layers. Third, when very tiny lateral interlayer shift occurs in bilayer graphene, the Fermi surfaces of the system are shown to undergo Lifshitz transition [3]. We will show that this unexpected hypersensitive electronic topological transition is caused by a unique interplay between the effective non-Abelian vector potential generated by sliding motions and Berry's phases associated with massless Dirac electrons.

• Journal of Electrical Engineering and Technology
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• 제13권2호
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• pp.812-821
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• 2018

An electromagnetic excitation force is caused by the air-gap flux density, which greatly influences the noise and vibration of the motor. In many real projects, skewed slot technology is widely used to reduce the harmonic components of the air-gap flux density to reduce the noise and vibration of the motor. However, a skewed slot has several side effects such as a transverse current and axial drifting. Thus, a double skewed slot rotor is selected with the aim of eliminating these side effects. This paper presents the exact structure of the double skewed slot rotor and the mechanism whereby the electromagnetic excitation force can be reduced. A multi-slice method is adopted to model the special structure. Finite element simulation is used to verify the theory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.307-308
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• 2008

Zinc oxide is a direct band gap wurtzite-type semiconductor with band gap energy of 3.37eV at room temperature. the n-type doped ZnO oxides, B doped ZnO (BZO) is widely studied in TCOs materials as it shows good electrical, optical, and luminescent properties. we focused on the fabrication of B doped ZnO films with glass substrate using the LSMCD at low temperature. And Novel boron-doped ZnO thin films were deposited and characterized from the structural, optical, electrical point of view. The structure, morphology, and optical properties of the films were studied as a function of by employing the XRD, SEM, Hall system and micro Raman system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제13권10호
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• pp.817-821
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• 2000

In this work, we have investigated the dependence of annealing temperature(T$\_$a/) on optical and electrical properties of amorphous hydrogenated SiC(a-SiC:H) films. The a-SiC:H films were deposited on corning glass and p-type Si(100) wafer by PECVD (plasma enhanced vapor deposition) using SiH$_4$+CH$_4$+N$_2$ gas mixture. The experimental results have shown that the optical energy band gap(E$\_$opt/)of the thin films annealed at high temperatures have shown that the graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• ETRI Journal
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• 제13권4호
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• pp.25-34
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• 1991

The stability and the electronic structure of $In_0.5$.$Ga_0.5$P-based superlattices are examined through self-consistent ab initio pseudopotential calculations. A chalcopyrite-like structure is found to be the lowest energy state over (001) and (111) monolayer superlattices (MLS). Our calculations indicate that all the ordered structures in bulk form are unstable against phase segregation into binary constituents at T = 0 while for epitaxial growth, the chalcopyrite phase is stabilized. The fundamental band gaps of the ordered structures are found to be direct and smaller than that of disordered alloys. The lowering of the band gap is explainable by band folding and pushing effects. We find the reduction of the band gap to be largest for the (111) MLS.

• Journal of Magnetics
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• 제22권2호
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• pp.250-256
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• 2017

The article presents the principle of a relatively small device that makes it possible to generate a strong magnetic field in an air gap without electrical energy consumption. It describes the implemented design of this device, the method of the assembly of opposing linear arrays from two NdFeB magnet layers, its advantages, the possible ways of increasing the parameters further and its application in various areas.

• Proceedings of the KSR Conference
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• 한국철도학회 2005년도 추계학술대회 논문집
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• pp.49-54
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• 2005

Linear metro with single sided linear induction motor is applied to the urban transit system because of non adhesion drive. But linear induction motor is required to reduce the energy consumption to maximize efficiency of LIM. In this paper, design requirements such as pole pitch, motor length, air gap, overhang length and the material of secondary sheet are investigated as major parameter of SLIM. It is effective for increasing the efficiency to adopt the copper reaction plate and decrease the mechanical air gap as small as possible.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.747-750
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• 2000

In this work, we investigated the dependence of optical and electrical properties of amorphous hydrogenated SiC (a-SiC:H) films on annealing temperature(T$\sub$a/). The a-SiC:H films were deposited by PECVD(plasma enhanced vapor deposition) on coming glass, p-type Si(100) wafer using SiH$_4$+CH$_4$+N$_2$gas mixture. The experimental results have shown that the optical energy band gap(E$\sub$g/) of the a-SiC thin films unchanged in the range of T$\sub$a/ from 400$^{\circ}C$ to 600$^{\circ}C$. The Raman spectrum of the thin films, annealed at high temperatures, has shown that graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• Transactions on Electrical and Electronic Materials
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• 제3권1호
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• pp.23-29
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• 2002

The electronic properties of Carbon Nanotube(CNT) are currently the focus of considerable interest. In this paper, the electronic properties of finite length effect in CNT for the carbon nano-scale device is presented. To Calculate the electronic properties of CNT, Empirical potential method (the extended Brenner potential for C-Si-H) for carbon and Tight Binding molecular dynamic (TBMD) simulation are used. As a result of study, we have known that the value of the band gap decreases with increasing the length of the tube. The energy band gap of (6,6) armchair CNT have the ranges between 0.3 eV and 2.5 eV. Also, our results are in agreements with the result of the other computational techniques.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.218.2-218.2
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• 2013

In this study, CdS thin films were deposited onto glass substrates by radio frequency magnetron sputtering. The films were grown at various substrate temperatures in the range of 100 to $250^{\circ}C$. The effects of substrate temperatures on the structural and optical properties were examined. The XRD analysis revealed that CdS films were polycrystalline and retained the mixed structure of hexagonal wurtzite and cubic phase. The percentages of hexagonal structured crystallites in the films were seen to be increased by increasing substrate temperatures. The film grown at $250^{\circ}C$ showed a relatively high transmittance of 80% in the visible region, with an energy band gap of 2.45 eV. The transmittance date analysis indicated that the optical band gap was closely related to the substrate temperatures.