• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.1-9
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• 2005

A stoichiometric mixture of evaporating materials for AgGaS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, AgGaS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 590℃ and 440℃, respectively. The temperature dependence of the energy band gap of the AgGaS₂ obtained from the absorption spectra was well described by the Varshni's relation, E/sub g/(T) = 2.7284 eV - (8.695×10/sup -4/ eV/K)T²/(T + 332 K). After the as-grown AgGaS₂ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of AgGaS₂ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of V/sub Ag/, V/sub s/, Ag/sub int/, and S/sub int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted AgGaS₂ single crystal thin films to an optical n-type. Also, we confirmed that Ga in AgGaS₂/GaAs crystal thin films did not form the native defects because Ga in AgGaS₂ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.105-105
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• 2009

$ZrO_2$ is one of the most attractive high dielectric constant (high-k) materials. As integrated circuit device dimensions continue to be scaled down, high-k materials have been studied more to resolve the problems for replacing the EY31conventional $SiO_2$. $ZrO_2$ has many favorable properties as a high dielectric constant (k= 20~25), wide band gap (5~7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2/Si$ structure. In order to get fine-line patterns, plasma etching has been studied more in the fabrication of ultra large-scale integrated circuits. The relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compound In this study, the surface kinetic properties of $ZrO_2$ thin film was investigated in function of Ch addition to $BCl_3/Ar$ gas mixture ratio, RF power and DC-bias power based on substrate temperature. The figure 1 showed the etch rate of $ZrO_2$ thin film as function of gas mixing ratio of $Cl_2/BCl_3/Ar$ dependent on temperature. The chemical state of film was investigated using x-ray photoelectron spectroscopy (XPS). The characteristics of the plasma were estimated using optical emission spectroscopy (OES). Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• Korean Journal of Construction Engineering and Management
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• v.16 no.4
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• pp.70-79
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• 2015

With the rise of the interest in a renewable system, the importance of the Life Cycle Cost Analysis(LCCA), an economic evaluation tool, has been increasing. However, there is an inevitable gap between a real cost and an estimation from LCCA because of the uncertainty of the external environment in real world. As the input variables in an analysis, such as a real discount rate and an energy cost, ares subject to change as time goes by, strategic decision on the current operating system is made depending on the real cost. Current economic evaluation approaches have treated only the fluctuation of input variables without consideration of the flexibility in operation, which has consequently led to the impairment on the reliability of LCCA. Therefore, new approach needs to be proposed to consider both the uncertainty of input variables and operational flexibility. To address this issue, the application of the Real Option to LCCA is presented in this study. Through a case analysis of LCCA of a solar heating system, the limits and current status of LCCA are identified. As a result, quantitative presentation of strategic decisions has been added in the new approach to implement the traditional approach.

• Journal of Science Education
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• v.36 no.2
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• pp.394-407
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• 2012

This study analyzed the result of the National Assessment of Educational Achievement (NAEA) in a Grade 9 Science class. The study first found that the ratio of below basic achievement was 8.1 percent. This means that a large number of middle school students have not reached basic scientific literacy. Second, the ratio of male students in the below basic level was 10.4 percent, which was double the ratio of female students at 5.5 percent. Third, according to the analysis of achievement by gender, female students outperformed male students. In addition, the female students' standard deviation was smaller than that of the male students, and their scaled scores were distributed nearer the average than that of the male students. Furthermore, analysis of achievement by content domains indicated that females outperformed in all content domains including motion and energy, materials, life, and earth sciences. Showing a similar tendency in the behavior domains, females outperformed males in all behavior domains except the understanding domain. Last, for achievement by living area, students living in the middle and small cities showed the highest scaled score, 196.81. Whereas the average scaled score of the students living in the big cities was 196.15; that of the students living in rural areas was 194.86. With respect to the standard deviation, big cities had the largest, 33.73. That of middle and small cities was 33.70, and of rural areas was 32.92. Although students in cities showed higher achievement in science compared to students in rural areas, they had a bigger gap in academic achievement.

• Proceedings of the KOR-KST Conference
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• 1996.02a
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• pp.59-86
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• 1996

Current methods for evaluating unsignalized intersections, and estimating level-of-service (LOS) is determined from efficiency-based criteria such as little or no delay to very long delays. At present, similar procedures to evaluate intersections using safety-based criteria do not exist. The improvement of sight distances at intersections is the most effective way of improving intersection safety. However, a set of procedures is necessary to account for the limitations in current methodology. Such an approach would build upon such methods, but also account for: deficiencies in the current deterministic solution for the determination of intersection sight distances; opportunity for an accident and severity of an accident; and cost-effectiveness of attaining various levels of sight distances. In this research, a model that estimates the degree of safety at two-way stop-controlled intersections is described. Only crossing maneuvers are considered in this study because accidents caused by the crossing maneuvers are the dominate type among intersection accidents. Monte Carlo methods are used to estimate the hazard at an intersection as a function of roadway features and traffic conditions. Driver`s minimum gap acceptance in the crossing vehicles and headway distribution on the major road are used in the crossing vehicles and headway distribution on the major road are used in the model to simulate the real intersectional maneuvers. Other random variables addressed in the model are: traffic speeds; preception-reaction times of both drivers in the crossing vehicles and drivers in oncoming vehicles on the major road; and vehicles on the major roads. The developed model produces the total number of conflicts per year per vehicle and total potential kinetic energy per year per vehicle dissipated during conflicts as measurements of safety at intersections. Based on the results from the developed simulation model, desirable sight distances for various speeds were determined as 350 feet, 450 feet and 550 feet for 40 mph, 50 mph and 60 mph prevailing speed on the major road, respectively. These values are seven to eight percent less than those values recommended by AASHTO. A safety based level-of-service (LOS) is also developed using the results of the simulation model. When the total number of conflicts per vehicle is less than 0.05 at an intersection, the LOS of the intersection is `A' and when the total number of conflicts per vehicle is larger than 0.25 at an intersection, the LOS is `F'. Similarly, when the total hazard per vehicle is less than 350, 000 1b-ft2/sec2, the LOS is `F'. Once evaluation of the current safety at the intersection is complete, a sensitivity analysis can be done by changing one or more input parameters. This will estimate the benefit in terms of time and budget of hazard reduction based upon improving geometric and traffic characteristics at the intersection. This method will also enable traffic engineers in local governments to generate a priority list of intersection improvement projects.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.576-583
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• 2018

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its band gap is larger than that of silicon and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, porous n-type SiC ceramics fabricated from ${\beta}-SiC$ powder have been found to show a high thermoelectric conversion efficiency in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$. For the application of SiC thermoelectric semiconductors, their figure of merit is an essential parameter, and high temperature (above $800^{\circ}C$) electrodes constitute an essential element. Generally, ceramics are not wetted by most conventional braze metals,. but alloying them with reactive additives can change their interfacial chemistries and promote both wetting and bonding. If a liquid is to wet a solid surface, the energy of the liquid-solid interface must be less than that of the solid, in which case there will be a driving force for the liquid to spread over the solid surface and to enter the capillary gaps. Consequently, using Ag with a relatively low melting point, the junction of the porous SiC semiconductor-Ag and/or its alloy-SiC and/or alumina substrate was studied. Ag-20Ti-20Cu filler metal showed promise as the high temperature electrode for SiC semiconductors.

• Journal of Korean Ophthalmic Optics Society
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• v.10 no.3
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• pp.193-203
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• 2005

Highly c-axis oriented nanocrystalline ZnO thin films on silica glass substrates were prepared by spin coating-pyrolysis process with a zinc naphthenate precursor. Only the XRD intensity peak of (002) phase was observed for all samples. With an increase in heat treatment temperature, the peak intensity of (002) phase increases. No significant aggregation of particle was present. From scanning probe microscopy analyses, three-dimensional grain growth, which was thought to be due to inhomogeneous substrate surface and c-axis oriented grain growth of the ZnO phase, was independent on heal-treatment temperature. Highly homogeneous surface of the highly-oriented ZnO film was observed at $800^{\circ}C$. All the films exhibited a high transmittance (above 80%) in visible region except film heat treated at $1000^{\circ}C$, and showed a sharp fundamental absorption edge at about $0.38{\sim}0.40{\mu}m$. The estimated energy band gap for all the films were within the range previously reported for films and single crystal. ZnO films, consisting of densely packed grains with smooth surface morphology were obtained by heat treatment at $600^{\circ}C{\sim}800^{\circ}C$, expected to be ideal for practical application, such as transparent conductive film and optical device.

• Journal of radiological science and technology
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• v.30 no.2
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• pp.113-119
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• 2007

It is important to consider the contrast of object in Mammography because an absorption gap between tissues of body and breast in breast is low. This study is to evaluate MTF image with resolution chart according to change of combination of target and filter. The results were as follows : 1. There were significant differences in X-ray energy according to combination of filter(Mo/Mo, Mo/Rh. Mo/Al, Rh/Rh, Rh/Al) and acrylic thickness(2 cm, 3 cm, 4 cm). 2. The value of lp/mm on MTF to 0.5 showed that the sharpness in MTF curve was 2.4 compared to Mo/Mo and 2cm acryl, 2.63 in Mo/Rh and 4 cm acryl, and 2.9 in Rh/Rh and 6cm acryl. 3. The value of lp/mm on MTF showed that the resolution in MTF curve was 6.0 compared to Mo/Mo and 2 cm acryl, 4.60 in Rh/Al and 4cm acryl, and 6.03 in Rh/Al and 6 cm acryl. 4. The value of MTF on 2.5 lp/mm distinguishable visually was 0.48 compared to Mo/Mo and 2 cm acryl, 0.53 in Mo/Rh and 4cm acryl, and 0.59 in Rh/Rh and 6cm acryl. 5. For the evaluation of an image of the mammo-phantom, the score of Mo/Mo was 12 points, Mo/Rh 11, Rh/Rh 10.5, Mo/Al 10, Rh/Al 9.0, respectively.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.242-247
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• 1998

Hydrogenated amorphous carbon nitride[a-C:H(N)] films were deposited on p-type Si(100) at room temperature with bias voltage of 200 V by DC saddle-field plasma-enhanced chemical vapor deposition. Effects of the ratio of $N_2$ to $CH_4$($N_2/CH_4$), in the range of 0 and 4 on such properties as optical properties, microstucture, relative fraction of nitrogen and carbon, etc. of the films have been investigated. The thickness of the a-C:H(N) film was abruptly decreased with the addition of nitrogen, but at $N_2/CH_4$>0.5, the thickness of the film gradually decreased with the increase of the $N_2/CH_4$. The ratio of N to C(N/C) of the films was saturated at 0.25 with the increase of $N_2CH_4$. N-H, C≡N bonds of the films increased but C-H bond decreased with the increase of $N_2CH_4$.Optical band gap energy of the film decreased from 2.53 eV at the ratio of $N_2CH_4$=4.