• Title/Summary/Keyword: energy gap

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Improvement of Reliability by Using Fluorine Doped Tin Oxide Electrode for Ta2O5 Based Transparent Resistive Switching Memory Devices

  • Lee, Do Yeon;Baek, Soo Jung;Ryu, Sung Yeon;Choi, Byung Joon
    • Journal of Applied Reliability
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    • v.16 no.1
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    • pp.1-6
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    • 2016
  • Purpose: Fluorine doped tin oxide (FTO) bottom electrode for $Ta_2O_5$ based RRAM was studied to apply for transparent resistive switching memory devices owing to its superior transparency, good conductivity and chemical stability. Methods: $ITO/Ta_2O_5/FTO$ (ITF) and $ITO/Ta_2O_5/Pt$ (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared. Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V). Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with $Ta_2O_5$ switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.

Envelope-Function Equation and Motion of Wave Packet in a Semiconductor Superlattice Structure

  • Kim, Byoung-Whi;Jun, Young-Il;Jung, Hee-Bum
    • ETRI Journal
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    • v.21 no.1
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    • pp.1-27
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    • 1999
  • We present a new description of envelope-function equation of the superlattice (SL). The SL wave function and corresponding effective-mass equation are formulated in terms of a linear combination of Bloch states of the constituent material with smaller band gap. In this envelope-function formalism, we review the fundamental concept on the motion of a wave packet in the SL structure subjected to steady and uniform electric fields F. The review confirms that the average of SL crystal momentums K = ($k_x,k_y,q$), where ($K_x,k_y$) are bulk inplane wave vectors and q SL wave vector, included in a wave packet satisfies the equation of motion = $_0+Ft/h$; and that the velocity and acceleration theorems provide the same type of group velocity and definition of the effective mass tensor, respectively, as in the Bulk. Finally, Schlosser and Marcus's method for the band theory of metals has been by Altarelli to include the interface-matching condition in the variational calculation for the SL structure in the multi-band envelope-function approximation. We re-examine this procedure more thoroughly and present variational equations in both general and reduced forms for SLs, which agrees in form with the proposed envelope-function formalism. As an illustration of the application of the present work and also for a brief investigation of effects of band-parameter difference on the subband energy structure, we calculate by the proposed variational method energies of non-strained $GaAs/Al_{0.32}Ga_{0.68}As$ and strained $In_{0.63}Ga_{0.37}As/In_{0.73}Ga_{0.27}As_{0.58}P_{0.42}SLs$ with well/barrier widths of $60{\AA}/500{\AA}$ and 30${\AA}/30{\AA}$, respectively.

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Growth of α-Ga2O3 Epitaxial Films on Al2O3 by Halide Vapor Pressure Epitaxy

  • Lee, Daejang;Cha, An-Na;Park, Junseong;Noh, Hogyun;Moon, Youngboo;Ha, Jun-Seok
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.4
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    • pp.113-118
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    • 2019
  • In this study, we investigated the growth of single-crystallinity α-Ga2O3 thin films on c-plane sapphire substrates using halide vapor pressure epitaxy. We also found the optimal growth conditions to suppress the phase transition of α-Ga2O3. Our results confirmed that the growth temperature and partial pressure of the reactive gas greatly influenced the crystallinity. The optimal growth temperature range was about 460~510℃, and the α-Ga2O3 thin films with the highest crystallinity were obtained at a III/VI ratio of 4. The thickness and surface morphology of the thin films was observed by scanning electron microscopy. The film thickness was 6.938 ㎛, and the full width at half maximum of the ω-2θ scan rocking curve was as small as 178 arcsec. The optical band gap energy obtained was 5.21 eV, and the films were almost completely transparent in the near-ultraviolet and visible regions. The etch pit density was found to be as low as about 6.0 × 104 cm-2.

Substituent Effect on the Structure and Biological Property of 99mTc-Labeled Diphosphonates: Theoretical Studies

  • Qiu, Ling;Lin, Jian-Guo;Gong, Xue-Dong;Cheng, Wen;Luo, Shi-Neng
    • Bulletin of the Korean Chemical Society
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    • v.33 no.12
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    • pp.4084-4092
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    • 2012
  • Theoretical calculations based on density functional theory (DFT) were performed to study the substituent effect on the geometric and electronic structures as well as the biological behavior of technetium-99m-labeled diphosphonate complexes. Optimized structures of these complexes are surrounded by six ligands in an octahedral environment with three unpaired 4d electrons ($d^3$ state) and the optimized geometry of $^{99m}Tc$-MDP agrees with experimental data. With the increase of electron-donating substituent or tether between phosphate groups, the energy gap between frontier orbitals increases and the probability of non-radiative deactivation via d-d electron transfer decreases. The charge distribution reflects a significant ligand-to-metal electron donation. Based on the calculated geometric and electronic structures and biologic properties of $^{99m}Tc$-diphosphonate complexes, several structure-activity relationships (SARs) were established. These results may be instructive for the design and synthesis of novel $^{99m}Tc$-diphosphonate bone imaging agent and other $^{99m}Tc$-based radiopharmaceuticals.

TEMPERATURE CHANGES OF IMPLANT SURFACE IN SECOND STAGE SURGERY WITH DETAL LASER : IN VITRO STUDY (레이저를 이용한 임프란트 이차수술시 온도변화에 관한 실험적 연구)

  • Ahn, Hyun-Jeong;Kim, Hyoun-Chull;Choi, Byeong-Gap;Song, Eon-Hee;Kim, Rae-Gyoung
    • The Journal of Korean Academy of Prosthodontics
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    • v.37 no.2
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    • pp.256-268
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    • 1999
  • Submerged implants require secondary surgical uncovering of implants after healing period of 3-6 months. In surgical methods, there are surgical scalpel, tissue punch, electro-surgical, and laser-used uncovering, and so forth The objectives of this study are investigation and assessment of 1) thermal change in clinical application for uncovering of HA-coated implant and pure titanium implant irradiated by pulsed Nd-YAG, $CO_2$, and Er-YAG laser. 2) surface change of cover screws aaer irradiation using laser energy. The temperature of apex & side wall of implants were recorded at 10sec, 20sec, 30sec after 30sec irradiation to implant healing screw; 1) pulsed Nd-YAG laser; 2W, 20pps, contact mode 2) $CO_2$ laser; water-infused & non-water infused state, 2.5-3.5W, contibuous mode, noncontact mode 3) $CO_2$ laser ; non-water infused state, 3W, superpulse, noncontact. mode 4) Er-YAG laser; (1) non-water infused state, 10pps, 60mj, contact mode (2) water-infused state, 10pps, 60mj, 80mj, 101mj, contact mode. According to the results of this study, pulsed Nd-YAG laser is not indicated because of increased thermal change and pitting of metal surface of implant cover screw. By contrast, $CO_2$ laser & Er-YAG laser are presumed to indicate because of narrow range of thermal change & near abscence of thermal damage of metal surface. Dental laser is thought to be much helpful to surgical procedure when it is used as optimal power and time condition considering characteristics and indications of each laser. Further research is needed to verify that these techniques are safe and beneficial to implant success.

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Assessment of the Counter-Flow Thrust Vector Control in a Three-Dimensional Rectangular Nozzle (3차원 직사각형 노즐에서 역유동 추력벡터 제어 평가)

  • Wu, Kexin;Kim, Tae Ho;Kochupulickal, James Jintu;Kim, Heuy Dong
    • Journal of the Korean Society of Propulsion Engineers
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    • v.24 no.1
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    • pp.34-46
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    • 2020
  • Computational assessment of gas-dynamic characteristics is explored for a three-dimensional counter-flow thrust vector control system in a rectangular supersonic nozzle. This convergent-divergent nozzle is designed by Method of Characteristics and its design Mach number is specially set as 2.5. Performance variations of the counter-flow vector system are illustrated by varying the gap height of the secondary flow duct. Key parameters are quantitatively analyzed, such as static pressure distribution along the centerline of the upper suction collar, deflection angle, secondary mass flow ratio, and resultant thrust coefficient. Additionally, the streamline on the symmetry plane, three-dimensional iso-Mach number surface contour, and three-dimensional turbulent kinetic energy contour are presented to reveal overall flow-field characteristics in detail.

Effects of the buffer layer annealing and post annealing temperature on the structural and optical properties of ZnO nanorods grown by a hydrothermal synthesis

  • Sin, Chang-Mi;Ryu, Hyeok-Hyeon;Lee, Jae-Yeop;Heo, Ju-Hoe;Park, Ju-Hyeon;Lee, Tae-Min;Choe, Sin-Ho;Fei, Han Qi
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.24.1-24.1
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    • 2009
  • The zinc oxide (ZnO) material as the II-VI compound semiconductor is useful in various fields of device applications such as light-emitting diodes (LEDs), solar cells and gas sensors due to its wide direct band gap of 3.37eV and high exciton binding energy of 60meV at room temperature. In this study, the ZnO nanorods were deposited onto homogenous buffer layer/Si(100) substrates by a hydrothermal synthesis. The Effects of the buffer layer annealing and post annealing temperature on the structural and optical properties of ZnO nanorods grown by a hydrothermal synthesis were investigated. For the buffer layer annealing case, the annealed buffer layer surface became rougher with increasing of annealing temperature up to $750^{\circ}C$, while it was smoothed with more increasing of annealing temperature due to the evaporation of buffer layer. It was found that the roughest surface of buffer layer improved the structural and optical properties of ZnO nanorods. For the post annealing case, the hydrothermally grown ZnO nanorods were annealed with various temperatures ranging from 450 to $900^{\circ}C$. Similarly in the buffer layer annealing case, the post annealing enhanced the properties of ZnO nanorods with increasing of annealing temperature up to $750^{\circ}C$. However, it was degraded with further increasing of annealing temperature due to the violent movement of atoms and evaporation. Finally, the buffer layer annealing and post annealing treatment could efficiently improve the properties of hydrothermally grown ZnO nanorods. The morphology and structural properties of ZnO nanorods grown by the hydrothermal synthesis were measured by atomic force microscopy (AFM), field emission scanning electron microscopy (SEM), and x-ray diffraction (XRD). The optical properties were also analyzed by photoluminescence (PL) measurement.

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Fabrication of Thin Film Transistors based on Sol-Gel Derived Oxide Semiconductor Layers by Ink-Jet Printing Technology

  • Mun, Ju-Ho;Kim, Dong-Jo;Song, Geun-Gyu;Jeong, Yeong-Min;Gu, Chang-Yeong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.16.1-16.1
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    • 2009
  • We have fabricated solution processed oxide semiconductor active layer for thin film transistors (TFTs). The oxide semiconductor layers were prepared by ink-jet printing the sol-gel precursor solution based on doped-ZnO. Inorganic ZnO-based thin films have drawn significant attention as an active channel layer for TFTs applications alternative to conventional Si-based materials and organic semiconducting materials, due to their wide energy band gap, optical transparency, high mobility, and better stability. However, in spite of such excellent device performances, the fabrication methods of ZnO related oxide active layer involve high cost vacuum processes such as sputtering and pulsed laser deposition. Herein we introduced the ink-jet printing technology to prepare the active layers of oxide semiconductor. Stable sol-gel precursor solutions were obtained by controlling the composition of precursor as well as solvents and stabilizers, and their influences on electrical performance of the transistors were demonstrated by measuring electrical parameters such as off-current, on-current, mobility, and threshold voltage. Microstructure and thermal behavior of the doped ZnO films were investigated by SEM, XRD, and TG/DTA. Furthermore, we studied the influence of the ink-jet printing conditions such as substrate temperature and surface treatment on the microstructure of the ink-jet printed active layers and electrical performance. The mobility value of the device with optimized condition was about 0.1-1.0 $cm^2/Vs$ and the on/off current ratio was about $10^6$. Our investigations demonstrate the feasibility of the ink-jet printed oxide TFTs toward successful application to cost-effective and mass-producible displays.

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Finite Element Analysis of Pipe Whip Restraint Behavior Under Jet Thrust Forces (유체 분사 추진력을 받는 배관 휩 구속장치 거동에 관한 유한요소해석)

  • Sugoong Koh;Lee, Young-Shin
    • Nuclear Engineering and Technology
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    • v.25 no.3
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    • pp.353-360
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    • 1993
  • Many types of pipe whip restraints are installed to protect the structural components from the anticipated pipe whip phenomena of high energy lines in nuclear power plants. It is necessary to investigate these phenomena accurately in order to design the pipe whip restraints properly and/or to evaluate the acceptability of the pipe whip restraint design. Various research programs have been conducted in many countries to develop analytical methods and to verify the validity of the methods. In this study, various types of finite elements in ANSYS[1], the general purpose finite element computer program, was used to simulate the postulated pipe whips to obtain impact loads and the calculated results were compared with the specific experimental results from the sample pipe whip test for the U-shaped pipe whip restraints. Some calculational models, having the gap element or the spring element between the pipe whip restraint and the pipe line, give reasonably good transient responses of the restraint forces compared with the experimental results, and could be useful in evaluating the acceptability of the pipe whip restraint design.

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A Case Study on Residents' Involvement in Sk$\"{a}$rk$\"{a}$ll Ecovillage in Sweden (스웨덴 훼르셸 생태마을의 주민참여 실태에 관한 사례연구)

  • Choi, Jung-Shin
    • Journal of Families and Better Life
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    • v.28 no.6
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    • pp.19-34
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    • 2010
  • This study aims to describe actual condition of residents' involvement of Sk$\"{a}$rk$\"{a}$ll ecovillage in Sweden by in-depth interviews with five residents. This study, hopefully, could contribute to offer useful information for forming ecovillage, as well as awakening about ecovillage movement to the public in Korea. The interviews were fulfilled during spring of 2010 in G$\"{o}$teborg and Sk$\"{a}$rk$\"{a}$ll ecovillage in Sweden. The results are as follows: 1) In terms of overall residents' involvement by self-evaluation everybody agrees with that residents' involvement was quite excellent during forming stage of the village, while it has been notably decreased now in running stage. It reveals there is a gap between ideology and reality. 2) Concerning decision making method, they use majority decision instead of consensus, since only 9 households of 20 are residing there all year around, it is hardly possible to assemble all the residents in the meeting. In Accordance with problematic conflicts in the village recently, development of socialization with others and education of communication skill for residents probably could be helpful to resolve conflicts among residents in long term. 3) In terms of evaluation of ecovillage movement in Sk$\"{a}$rk$\"{a}$ll ecovillage, it is the fact that many residents live less self-sufficiently, more energy consumed than the ideology pursuits. Also, they live with close connections with conventional society. Nevertheless, the efforts they are willing to practice 3R principles (Recycle, Reuse, Reduction) have to be highly respected, if we consider its educational influence to environmental movement for the conventional society.