Journal of Applied Reliability (한국신뢰성학회지:신뢰성응용연구)

The Korean Reliability Society (한국신뢰성학회)
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Improvement of Reliability by Using Fluorine Doped Tin Oxide Electrode for Ta2O5 Based Transparent Resistive Switching Memory Devices

  • Lee, Do Yeon (Department of Materials Science and Engineering, Seoul National University of Science and Technology) ;
  • Baek, Soo Jung (Department of Materials Science and Engineering, Seoul National University of Science and Technology) ;
  • Ryu, Sung Yeon (Department of Materials Science and Engineering, Seoul National University of Science and Technology) ;
  • Choi, Byung Joon (Department of Materials Science and Engineering, Seoul National University of Science and Technology)
  • Received : 2015.12.01
  • Accepted : 2015.12.29
  • Published : 2016.03.25
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Abstract

Purpose: Fluorine doped tin oxide (FTO) bottom electrode for $Ta_2O_5$ based RRAM was studied to apply for transparent resistive switching memory devices owing to its superior transparency, good conductivity and chemical stability. Methods: $ITO/Ta_2O_5/FTO$ (ITF) and $ITO/Ta_2O_5/Pt$ (ITP) devices were fabricated on glass and Si substrate, respectively. UV-visible (UV-VIS) spectroscopy was used to examine transparency of the ITF device and its band gap energy was determined by conventional Tauc plot. Electrical properties, such as electroforming and voltage-induced RS characteristics were measured and compared. Results: The device with an FTO bottom electrode showed good transparency (>80%), low forming voltage (~-2.5V), and reliable bipolar RS behavior. Whereas, the one with Pt electrode showed both bipolar and unipolar RS behaviors unstably with large forming voltage (~-6.5V). Conclusion: Transparent and conducting FTO can successfully realize a transparent RRAM device. It is concluded that FTO electrode may form a stable interface with $Ta_2O_5$ switching layer and plays as oxygen ion reservoir to supply oxygen vacancies, which eventually facilitates a stable operation of RRAM device.

Keywords

References

  1. Hwang, C. S. (2015). "Prospective of Semiconductor Memory Devices: from Memory System to Materials". Advanced Electronic Materials, Vol. 1, No. 6.
  2. Valov, I., Waser, R., Jameson, J. R. and Kozicki, M. N. (2011). "Electrochemical metallization memoriesfundamentals, applications, prospects". Nanotechnology, Vol. 22, No. 25, pp. 254003. https://doi.org/10.1088/0957-4484/22/25/254003
  3. Jeong, D. S. et al. (2012). "Emerging memories: resistive switching mechanisms and current status". Reports on Progress in Physics, Vol. 75, No. 7, pp. 076502. https://doi.org/10.1088/0034-4885/75/7/076502
  4. Yu, S. (2014). "Overview of resistive switching memory( RRAM) switching mechanism and device modeling". Circuits and Systems (ISCAS), 2014 IEEE International Symposium on, pp. 2017-2020.
  5. Yang, J. J., Strukov, D. B. and Stewart, D. R. (2013). "Memristive devices for computing". Nature nanotechnology, Vol. 8, No. 1, pp. 13-24. https://doi.org/10.1038/nnano.2012.240
  6. Peng, S. et al. (2012). "Mechanism for resistive switching in an oxide-based electrochemical metallization memory". Applied Physics Letters, Vol. 100, No. 7, pp. 072101. https://doi.org/10.1063/1.3683523
  7. Jung, S. H. et al. (2010). "Variation of switching characteristics dependent on contact area in unipolar resistive switching random access memory (RRAM)". Proceedings of The Institute of Electronics and Information Engineers, Vol. 33, No. 6, pp. 699-700.
  8. Lanza, M. (2014). "A review on resistive switching in high-k dielectrics: a nanoscale point of view using conductive atomic force microscope". Materials, Vol. 7, No. 3, pp. 2155-2182. https://doi.org/10.3390/ma7032155
  9. Yang, J. J., Inoue, I. H., Mikolajick, T. and Hwang, C. S. (2012). "Metal oxide memories based on thermochemical and valence change mechanisms". MRS bulletin, Vol. 37, No. 2, pp. 131-137. https://doi.org/10.1557/mrs.2011.356
  10. Park, J. et al. (2011). "Improved switching uniformity and speed in filament-type RRAM using lightning rod effect". Electron Device Letters, IEEE, Vol. 33, No. 1, pp. 63-65.
  11. Wouters, D. J. et al. (2012). "Analysis of complementary RRAM switching. Electron Device Letters", IEEE, Vol. 33, No. 8, pp. 1186-1188. https://doi.org/10.1109/LED.2012.2198789
  12. Acharyya, D., Hazra, A., and Bhattacharyya, P. (2014). "A journey towards reliability improvement of TiO 2 based Resistive Random Access Memory: A review". Microelectronics reliability, Vol. 54, No. 3, pp. 541-560. https://doi.org/10.1016/j.microrel.2013.11.013
  13. Pan, F., Gao, S., Chen, C., Song, C. and Zeng, F. (2014). "Recent progress in resistive random access memories: materials, switching mechanisms, and performance". Materials Science and Engineering: R: Reports, Vol. 83, pp. 1-59. https://doi.org/10.1016/j.mser.2014.06.002
  14. Helander, M. G., Greiner, M. T., Wang, Z. B., Tang, W. M. and Lu, Z. H. (2011). "Work function of fluorine doped tin oxide". Journal of Vacuum Science & Technology A, Vol. 29, No. 1, pp. 011019.
  15. Banyamin, Z. Y., Kelly, P. J., West, G. and Boardman, J. (2014). "Electrical and optical properties of fluorine doped tin oxide thin films prepared by magnetron sputtering". Coatings, Vol. 4, No. 4, pp. 732-746. https://doi.org/10.3390/coatings4040732